摘要:
There is provided an illumination system. the illumination system includes (a) a source of light having a wavelength of less than or equal to 193 nm, and (b) an optical element in a path of the light, having a first raster element, a second raster element, a third raster element and a fourth raster element situated thereon. The second raster element is adjacent to the first raster element, and located a first distance from the first raster element. The fourth raster element is adjacent to the third raster element, and located a second distance from the third raster element. The second distance is different from the first distance.
摘要:
There is provided an illumination system for EUV-wavelengths. The illumination system includes a plurality of EUV-light sources and an optical unit combining the plurality of EUV-light sources.
摘要:
There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ≦193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.
摘要:
There is provided an illumination system for a projection exposure system. The illumination system includes (a) a light source for the emission of wavelengths of ≦193 nm, (b) a device for producing secondary light sources, the device including a mirror having raster elements, (c) a diaphragm plane, (d) a first optical element for imaging the diaphragm plane in an exit pupil of the illumination system, (e) an object plane in which images of the raster elements are substantially in line and illuminate a predetermined field with an intensity distribution, and (f) a second optical element for producing a light distribution in the exit pupil. The light distribution is specified by a parameter selected from the group consisting of type and filling degree, and the parameter is modified by a technique selected from the group consisting of exchanging, displacing and deforming the second optical element.
摘要:
An illuminating device of a projection-microlithographic device includes a light source, an objective, and a device which produces a particular image field configuration. The device has fields which, in the direction of scanning movement, are separated at least in parts by a free zone, and are located in a peripheral region of the circular image field of a downstream projection objective in a manner at least approximating rotation symmetry. The integral of the quantity of light passing through the fields in the scanning direction are constant over the entire extent of the image field configuration in the direction at right angles to the scanning direction. Such an image field configuration replaces a conventional rectangular scanner slot formation whose width in the scanning direction corresponds to the forementioned integral of the image field configuration. The design of the image field configuration permits an approximately rotationally symmetric illumination of the projection objective.
摘要:
The invention concerns an illumination system for wavelengths (193 nm, particularly for EUV lithography with at least one light source, which has an illumination A in one surface; at least one device for producing secondary light sources; at least one mirror or lens device, comprising at least one mirror or one lens, which is (are) divided into raster elements; one or more optical elements, which are arranged between the mirror or lens device that comprises at least one mirror or one lens, which is (are) divided into raster elements, and the reticle plane, wherein the optical elements image the secondary light sources in the exit pupil of the illumination system. The illumination system is characterized by the fact that the light source is a light source for producing radiation with a wavelength ≦193 nm, which irradiates in a well-defined plane with a wavelength spectrum, wherein the range of wavelengths used for the application, particularly for lithography, has a beam divergence perpendicular to this plane that is smaller than 5 mrads.
摘要:
An illumination system for a microlithography projection illumination equipment, in which a secondary light source is imaged on a reticle . The distortion of the image can be set by at least one variable optical path between optical elements, and the uniformity of the illumination is changed because of the changed distortion, in particular, in that the uniformity is increased toward the edge.
摘要:
There is provided a multi-mirror-system for an illumination system, especially for lithography with wavelengths ≦193 nm. The system includes light rays traveling along a light oath from an object plane to an image plane, and an arc-shaped field in the image plane, whereby a radial direction in the middle of the arc-shaped field defines a scanning direction. The first mirror and the second mirror are arranged in the light path in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm in the scanning direction. Furthermore, the light rays are impinging on the first mirror and the second mirror with incidence angles ≦30° or ≧60° relative to a surface normal of the first and second mirror.
摘要:
There is provided an illumination system. The illumination system includes a first light source and a second light source, each of which are for providing light having a wavelength ≦193 nm, and an optical element. The first light source illuminates a first area of the optical element and the second light source illuminates a second area of the optical element.
摘要:
There is provided an illumination system for light having wavelengths ≦193 nm. The system includes (a) a first raster element for receiving a first diverging portion of the light and directing a first beam of the light, (b) a second raster element for receiving a second diverging portion of the light and directing a second beam of the light, where the first raster element is oriented at an angle with respect to the second raster element to cause a center ray of the first beam to intersect with a center ray of the second beam at an image plane, and (c) an optical element for imaging secondary sources of the light in an exit pupil, where the optical element is situated in a path of the light after the first and second raster elements and before the image plane.