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公开(公告)号：US08183684B2
公开(公告)日：2012-05-22
申请号：US12532321
申请日：2007-09-27
申请人： Isao Nakazato
发明人： Isao Nakazato
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/85 , H01L23/4952 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/291 , H01L2224/2919 , H01L2224/45015 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48229 , H01L2224/48247 , H01L2224/48465 , H01L2224/48511 , H01L2224/48599 , H01L2224/4903 , H01L2224/49051 , H01L2224/73265 , H01L2224/78301 , H01L2224/83801 , H01L2224/83851 , H01L2224/85045 , H01L2224/85181 , H01L2224/85423 , H01L2224/85447 , H01L2224/85455 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01058 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/09701 , H01L2924/15153 , H01L2924/1517 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/20752 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Provided is a thin semiconductor device using a thin metal wire and having a low top portion. The semiconductor device of the present invention has a structure in which a bonding pad 55 of a semiconductor chip 54 and an electrode 53B are connected to each other via a thin metal wire 51, and the thin metal wire 51 forms a curve portion 57. Specifically, the thin metal wire 51 exhibits the curve portion 57 from a first bond, and is provided with a linear second extending portion 60 with an end portion thereof being a first bend portion 59. A second bend portion 61 is located lower than a top portion 58 of the curve portion 57.
摘要翻译： 提供一种使用细金属丝并具有低顶部的薄半导体器件。 本发明的半导体装置具有半导体芯片54的接合焊盘55和电极53B经由薄金属线51彼此连接的结构，并且金属细线51形成曲线部分57.具体地， ，细金属丝51从第一接合处呈现弯曲部分57，并且设置有线性第二延伸部分60，其端部是第一弯曲部分59.第二弯曲部分61位于比顶部部分 58的曲线部分57。
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公开(公告)号：US09035473B2
公开(公告)日：2015-05-19
申请号：US12568487
申请日：2009-09-28
CPC分类号： H01L23/295 , H01L21/561 , H01L21/565 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/4809 , H01L2224/48227 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2924/20751 , H01L2224/85399 , H01L2224/05599
摘要： Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin.
摘要翻译： 提供了一种防止薄金属线穿透的薄电路器件和制造电路器件的方法。 电路装置主要包括：基板，包括第一基板和第二基板; 垫分别形成在第二基板的上表面上; 固定在所述第一基板的上表面上的半导体元件; 每个连接半导体元件和对应的一个焊盘的金属细线; 以及半导体元件和细金属丝被覆盖的密封树脂，由此密封具有半导体元件的电路器件和设置在其中的细金属线。 此外，位于密封树脂的最上部的填料颗粒被构成密封树脂的树脂材料覆盖。
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公开(公告)号：US20100090330A1
公开(公告)日：2010-04-15
申请号：US12532321
申请日：2007-09-27
申请人： Isao Nakazato
发明人： Isao Nakazato
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/85 , H01L23/4952 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/291 , H01L2224/2919 , H01L2224/45015 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48229 , H01L2224/48247 , H01L2224/48465 , H01L2224/48511 , H01L2224/48599 , H01L2224/4903 , H01L2224/49051 , H01L2224/73265 , H01L2224/78301 , H01L2224/83801 , H01L2224/83851 , H01L2224/85045 , H01L2224/85181 , H01L2224/85423 , H01L2224/85447 , H01L2224/85455 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01058 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/09701 , H01L2924/15153 , H01L2924/1517 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/20752 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Provided is a thin semiconductor device using a thin metal wire and having a low top portion. The semiconductor device of the present invention has a structure in which a bonding pad 55 of a semiconductor chip 54 and an electrode 53B are connected to each other via a thin metal wire 51, and the thin metal wire 51 forms a curve portion 57. Specifically, the thin metal wire 51 exhibits the curve portion 57 from a first bond, and is provided with a linear second extending portion 60 with an end portion thereof being a first bend portion 59. A second bend portion 61 is located lower than a top portion 58 of the curve portion 57.
摘要翻译： 提供一种使用细金属丝并具有低顶部的薄半导体器件。 本发明的半导体装置具有半导体芯片54的接合焊盘55和电极53B经由薄金属线51彼此连接的结构，并且金属细线51形成曲线部分57.具体地， ，细金属丝51从第一接合处呈现弯曲部分57，并且设置有线性第二延伸部分60，其端部是第一弯曲部分59.第二弯曲部分61位于比顶部部分 58的曲线部分57。
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公开(公告)号：US20100078833A1
公开(公告)日：2010-04-01
申请号：US12568487
申请日：2009-09-28
CPC分类号： H01L23/295 , H01L21/561 , H01L21/565 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/4809 , H01L2224/48227 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2924/20751 , H01L2224/85399 , H01L2224/05599
摘要： Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin.
摘要翻译： 提供了一种防止薄金属线穿透的薄电路器件和制造电路器件的方法。 电路装置主要包括：基板，包括第一基板和第二基板; 垫分别形成在第二基板的上表面上; 固定在所述第一基板的上表面上的半导体元件; 每个连接半导体元件和对应的一个焊盘的金属细线; 以及半导体元件和细金属丝被覆盖的密封树脂，由此密封具有半导体元件的电路器件和设置在其中的细金属线。 此外，位于密封树脂的最上部的填料颗粒被构成密封树脂的树脂材料覆盖。
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