DATA TRANSMITTING APPARATUS AND DATA RECEIVING APPARATUS
    1.
    发明申请
    DATA TRANSMITTING APPARATUS AND DATA RECEIVING APPARATUS 审中-公开
    数据发送装置和数据接收装置

    公开(公告)号:US20080320375A1

    公开(公告)日:2008-12-25

    申请号:US12143114

    申请日:2008-06-20

    IPC分类号: H03M13/09 G06F11/10

    摘要: To provide a data transmitting apparatus and the like capable of enhancing error detection accuracy without increasing a bandwidth unnecessarily used for the error detection performed on encrypted data and minimizing deterioration in sound quality of the data by effectively reducing noises in the transmission of the data through networks for cars and the like even though the data transmitting apparatus has been simply structured. The present invention makes it possible to perform error detection on audio data according to the sizes of encrypted blocks or packets using simple error check codes embedded in the audio data, or to perform error detection using a variation sequence of attribute information to be transmitted together with the audio data. In this case, output of the sound resulting from the audio data having an error is stopped.

    摘要翻译: 为了提供能够提高错误检测精度的数据发送装置等,而不增加不必要地用于对加密数据进行的错误检测的带宽,并且通过有效减少通过网络传输数据的噪声来最小化数据的声音质量的劣化 对于汽车等,即使数据发送装置已经简单地构造。 本发明可以根据嵌入在音频数据中的简单错误校验码根据加密块或分组的大小对音频数据执行错误检测,或者使用将要传送的属性信息的变化序列进行错误检测 音频数据。 在这种情况下,停止由具有错误的音频数据产生的声音的输出。

    Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device
    2.
    发明申请
    Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device 有权
    半导体装置,半导体装置的图形生成方法,半导体装置的制造方法以及半导体装置的图案生成装置

    公开(公告)号:US20070187777A1

    公开(公告)日:2007-08-16

    申请号:US11783465

    申请日:2007-04-10

    IPC分类号: H01L29/76 G06F17/50

    CPC分类号: H01L27/0207 G06F17/5068

    摘要: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

    摘要翻译: 本发明的目的是有效地吸收电力噪声并实现电路的稳定操作。 本发明提供了一种半导体器件,包括:旁路电容器,其包括具有形成为从电力布线区域延伸到与电力布线区域相邻的空白区域下方的部分的MOS电结构,并且不具有其他功能层, 并且通过在一个导电类型的扩散区域上的电容绝缘膜形成,以及形成在接地布线区域下方并固定衬底电位的衬底接触,其中旁路电容器具有与形成的电源布线接触的接触 在栅电极的表面上形成具有一个导电类型的扩散区域和基板接触的扩散区域彼此连接。

    Printing material comprising a combustible material suitable for
creating pits on irradiation with a laser beam
    3.
    发明授权
    Printing material comprising a combustible material suitable for creating pits on irradiation with a laser beam 失效
    包括适用于在用激光束照射时产生凹坑的可燃材料的印刷材料

    公开(公告)号:US5324617A

    公开(公告)日:1994-06-28

    申请号:US903757

    申请日:1992-06-25

    IPC分类号: B41C1/05 B41N1/12 G03C1/73

    摘要: A printing material comprises a shaped structure made of a combustible material and an oxidizing agent, or a self-combustible material having an oxidizing agent contained therein, or a mixture of a self-combustible material and a combustible material. The printing material is formed with pits by application of a laser beam with small output power. The printing material may further comprise a light absorber in order to promote absorption of the laser beam in the printing material.

    摘要翻译: 印刷材料包括由可燃材料和氧化剂制成的成形结构,或其中含有氧化剂的自燃材料,或自燃材料和可燃材料的混合物。 印刷材料通过施加具有小输出功率的激光束形成凹坑。 印刷材料还可以包括光吸收剂,以促进激光束在印刷材料中的吸收。

    Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device
    4.
    发明申请
    Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device 有权
    半导体器件的半导体器件图案方法和半导体器件的图案发生器的半导体器件方法

    公开(公告)号:US20050017320A1

    公开(公告)日:2005-01-27

    申请号:US10496297

    申请日:2002-11-21

    CPC分类号: H01L27/0207 G06F17/5068

    摘要: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

    摘要翻译: 本发明的目的是有效地吸收电力噪声并实现电路的稳定操作。 本发明提供了一种半导体器件,包括:旁路电容器,其包括具有形成为从电力布线区域延伸到与电力布线区域相邻的空白区域下方的部分的MOS电结构,并且不具有其他功能层, 并且通过在一个导电类型的扩散区域上的电容绝缘膜形成,以及形成在接地布线区域下方并固定衬底电位的衬底接触,其中旁路电容器具有与形成的电源布线接触的接触 在栅电极的表面上形成具有一个导电类型的扩散区域和基板接触的扩散区域彼此连接。

    Coordinate position digitizing system
    5.
    发明授权
    Coordinate position digitizing system 失效
    坐标位数字化系统

    公开(公告)号:US4723056A

    公开(公告)日:1988-02-02

    申请号:US835727

    申请日:1986-03-03

    CPC分类号: G06F3/045

    摘要: A coordinate position digitizing system incorporates apparatus for detecting the X and Y positions of a voltage detecting device relative to a position determining plate employing apparatus for generating data corresponding to the X and Y positions of said voltage detecting device on said plate at successive sampling times, means for calculating the difference corresponding to the difference in the indicated position at two successive sampling periods, and rejecting signals indicating positions which differ from previous positions by distances which are greater than a predetermined amount, corresponding to the maximum distance that the voltage detecting device can be moved between successive sampling periods. In this way, position-indicating signals which are corrupted by noise pulses or the like are rejected.

    摘要翻译: 坐标位置数字化系统包括用于相对于位置确定板检测电压检测装置的X和Y位置的装置,该装置用于在连续采样时间产生对应于所述电路板上的所述电压检测装置的X和Y位置的数据, 用于计算与两个连续采样周期中的指示位置的差相对应的差的装置,以及对应于电压检测装置可以的最大距离,拒绝指示与先前位置不同的距离的信号,该距离大于预定量 在连续采样周期之间移动。 以这种方式,被噪声脉冲等损坏的位置指示信号被拒绝。

    Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device
    6.
    发明授权
    Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device 有权
    半导体装置,半导体装置的图形生成方法,半导体装置的制造方法以及半导体装置的图案生成装置

    公开(公告)号:US07911027B2

    公开(公告)日:2011-03-22

    申请号:US11783465

    申请日:2007-04-10

    IPC分类号: H01L29/00

    CPC分类号: H01L27/0207 G06F17/5068

    摘要: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit.The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

    摘要翻译: 本发明的目的是有效地吸收电力噪声并实现电路的稳定操作。 本发明提供了一种半导体器件,包括:旁路电容器,其包括具有形成为从电力布线区域延伸到与电力布线区域相邻的空白区域下方的部分的MOS电结构,并且不具有其他功能层, 并且通过在一个导电类型的扩散区域上的电容绝缘膜形成,以及形成在接地布线区域下方并固定衬底电位的衬底接触,其中旁路电容器具有与形成的电源布线接触的接触 在栅电极的表面上形成具有一个导电类型的扩散区域和基板接触的扩散区域彼此连接。

    Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device
    7.
    发明授权
    Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device 有权
    半导体器件的半导体器件图案方法和半导体器件的图案发生器的半导体器件方法

    公开(公告)号:US07307333B2

    公开(公告)日:2007-12-11

    申请号:US10496297

    申请日:2002-11-21

    IPC分类号: H01L29/00

    CPC分类号: H01L27/0207 G06F17/5068

    摘要: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit.The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

    摘要翻译: 本发明的目的是有效地吸收电力噪声并实现电路的稳定操作。 本发明提供了一种半导体器件,包括:旁路电容器,其包括具有形成为从电力布线区域延伸到与电力布线区域相邻的空白区域下方的部分的MOS电结构,并且不具有其他功能层, 并且通过在一个导电类型的扩散区域上的电容绝缘膜形成,以及形成在接地布线区域下方并固定衬底电位的衬底接触,其中旁路电容器具有与形成的电源布线接触的接触 在栅电极的表面上形成具有一个导电类型的扩散区域和基板接触的扩散区域彼此连接。

    Method, apparatus, and computer program for evaluating noise immunity of a semiconductor device
    8.
    发明授权
    Method, apparatus, and computer program for evaluating noise immunity of a semiconductor device 有权
    用于评估半导体器件的抗噪声性的方法,装置和计算机程序

    公开(公告)号:US07233889B2

    公开(公告)日:2007-06-19

    申请号:US10278507

    申请日:2002-10-23

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: A method of evaluating noise immunity of a semiconductor device is provided. An actual circuit including the semiconductor device is represented by an equivalent circuit which has a target equivalent circuit, a noise source equivalent circuit, and an external equivalent circuit connected in parallel. The target equivalent circuit represents the semiconductor device. The noise source equivalent circuit represents a noise source outside the semiconductor device, and supplies noise to the target equivalent circuit. The external equivalent circuit represents a circuit outside the semiconductor device. The noise immunity is evaluated based on a voltage or current which arises in the target equivalent circuit by the noise. In this way, the immunity of the semiconductor device against extraneous noise can be evaluated in consideration of the effects of the circuitry outside the semiconductor device.

    摘要翻译: 提供了一种评估半导体器件的抗噪声性的方法。 包括半导体器件的实际电路由具有并联连接的目标等效电路,噪声源等效电路和外部等效电路的等效电路表示。 目标等效电路表示半导体器件。 噪声源等效电路表示半导体器件外部的噪声源,并且将噪声提供给目标等效电路。 外部等效电路表示半导体器件外部的电路。 基于由噪声在目标等效电路中产生的电压或电流来评估噪声抗扰度。 以这种方式,可以考虑半导体器件外的电路的影响来评估半导体器件对外来噪声的抗扰性。

    Semiconductor integrated circuit having improving program recovery capabilities
    9.
    发明授权
    Semiconductor integrated circuit having improving program recovery capabilities 有权
    具有提高程序恢复能力的半导体集成电路

    公开(公告)号:US07103738B2

    公开(公告)日:2006-09-05

    申请号:US10647260

    申请日:2003-08-26

    IPC分类号: G06F12/16 G06F12/11

    CPC分类号: G06F13/28

    摘要: A backup memory, a DMA (direct memory access) controller, and a WDT (watch dog timer) are provided in addition to a CPU (central processing unit), a RAM (random access memory), and a peripheral circuit. The DMA controller exercises control so that respective data of the CPU, RAM and peripheral circuit is saved in the backup memory each time the CPU, being under normal operation, supplies a counter reset signal to the WDT, and so that the data that has been saved in the backup memory is restored to the CPU, the RAM and the peripheral circuit, respectively, if the WDT has detected a program runaway and outputted a time-over signal. Therefore, even in a case where a program runaway has occurred in the CPU, normal operation is permitted to be resumed from midway in the program.

    摘要翻译: 除了CPU(中央处理单元),RAM(随机存取存储器)和外围电路之外,还提供备用存储器,DMA(直接存储器访问)控制器和WDT(看门狗定时器)。 DMA控制器进行控制,以使CPU,RAM和外围电路的每个数据都保存在备用存储器中,每当处于正常操作状态的CPU向WDT提供计数器复位信号时, 如果WDT检测到程序失控并输出超时信号,则保存在备份存储器中的数据被分别还原到CPU,RAM和外围电路。 因此,即使在CPU中发生程序失控的情况下,也可以在程序的中途恢复正常的动作。