公开(公告)号：US20120171798A1

公开(公告)日：2012-07-05

申请号：US11737545

申请日：2007-04-19

申请人： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

发明人： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC分类号： H01L21/02

CPC分类号： B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

摘要： In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

摘要翻译： 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US20080301681A1

公开(公告)日：2008-12-04

申请号：US12129816

申请日：2008-05-30

申请人： Junichi Sakamoto ,  Masaharu Yoshimori ,  Tanio Nagasaki ,  Shinsuke Koyama ,  Kazumasa Ito ,  Minoru Takahata ,  Mikako Hatakenaka ,  Jin Satoh ,  Hideshi Yamada ,  Kenichiro Yokota ,  Hideki Takeuchi ,  Hitoshi Ishikawa

发明人： Junichi Sakamoto ,  Masaharu Yoshimori ,  Tanio Nagasaki ,  Shinsuke Koyama ,  Kazumasa Ito ,  Minoru Takahata ,  Mikako Hatakenaka ,  Jin Satoh ,  Hideshi Yamada ,  Kenichiro Yokota ,  Hideki Takeuchi ,  Hitoshi Ishikawa

IPC分类号： G06F9/46

CPC分类号： G06T1/20

摘要： An information processing apparatus including: a plurality of data processing functional blocks each used for carrying out individual data processing; a flow control section configured to execute control of data flows among the data processing functional blocks; and a control section configured to carry out a setting process to set the data processing functional blocks and the flow control section. The control section acquires configuration information in accordance with a task list for data processing to be carried out; carries out the setting process to set the data processing functional blocks and the flow control section on the basis of the acquired configuration information; and constructs a data processing configuration adapted to various kinds of data processing to be carried out.

摘要翻译： 一种信息处理设备，包括：多个数据处理功能块，每个用于执行单独的数据处理; 流控制部，被配置为执行数据处理功能块之间的数据流的控制; 以及控制部，被配置为执行设置处理以设置数据处理功能块和流程控制部。 控制部根据用于要执行的数据处理的任务列表来获取配置信息; 基于获取的配置信息，执行设置处理功能块和流程控制部分的设置; 并构建适于进行各种数据处理的数据处理配置。

公开(公告)号：US07217243B2

公开(公告)日：2007-05-15

申请号：US10869152

申请日：2004-06-16

申请人： Hideki Takeuchi

发明人： Hideki Takeuchi

IPC分类号： A61B8/00

CPC分类号： G01S15/8925 ,  A61B8/483 ,  G01S7/52046 ,  G01S7/52079 ,  G01S7/5208 ,  G01S15/8927 ,  G10K11/346

摘要： A plurality of 2D sub arrays are defined on a 2D array transducer for effecting transmission and reception of ultrasound. For each sub array, a plurality of groups are set. More specifically, a plurality of (16, for example) transducer elements forming a sub array are grouped or divided into a plurality of (4, for example) groups. A multiplexer sums a plurality of receiving signals output from the plurality of transducer elements for each group, and generates a group receiving signal. A plurality of group receiving signals thus generated are then subjected to a sub phase adjusting and summing process to form a sub phase adjusted and summed signal. A plurality of sub phase adjusted and summed signals corresponding to the plurality of sub arrays are then subjected to a main phase adjusting and summing process. A sub phase adjusting and summing processing section is provided within a probe head, a cable connector, or an apparatus body. During transmission, the multiplexer supplies a transmitting signal to a plurality of transducer elements forming a group in parallel.

摘要翻译： 在2D阵列换能器上定义多个2D子阵列以实现超声波的发射和接收。 对于每个子阵列，设置多个组。 更具体地，形成子阵列的多个（16个例如）换能器元件被分组或分成多个（例如）4个组。 多路复用器对从每个组的多个换能器元件输出的多个接收信号相加，并产生组接收信号。 然后，如此生成的多个组接收信号经过子相位调整和求和处理，以形成子相位调整和求和信号。 然后，对应于多个子阵列的多个子相位调整和求和信号进行主相位调整和求和处理。 在探针头，电缆连接器或装置主体内设置有副相位调整和求和处理部。 在传输期间，多路复用器将发送信号提供给并联形成组的多个换能器元件。

公开(公告)号：US20060111446A1

公开(公告)日：2006-05-25

申请号：US11246641

申请日：2005-10-11

申请人： Kosuke Okazaki ,  Masahiko Uchida ,  Hiroaki Kobayashi ,  Yuichiro Kai ,  Hideki Takeuchi ,  Kenji Yokoyama ,  Yoshihiro Terao ,  Ritsu Suzuki

发明人： Kosuke Okazaki ,  Masahiko Uchida ,  Hiroaki Kobayashi ,  Yuichiro Kai ,  Hideki Takeuchi ,  Kenji Yokoyama ,  Yoshihiro Terao ,  Ritsu Suzuki

IPC分类号： A61K31/18 ,  C07C311/45

CPC分类号： C07C311/29

摘要： The present invention relates to a 5-amidino-N-(2-aminophenethyl)-2-hydroxybenzenesulfonamide derivative represented by the general formula: wherein R1 is a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom, an optionally substituted lower alkyl group, etc.; R3 is a di(lower alkyl)amino group, a lower alkyl group, a cycloalkyl group, etc.; Q is a hydrogen atom or an optionally substituted lower alkyl group; and Z is a hydrogen atom or a hydroxy group, etc., or a pharmaceutically acceptable salt thereof, which exerts a potent and selective activated blood coagulation factor X inhibitory activity and is useful as an agent for the prevention or treatment of a disease occurred associating an activated blood coagulation factor X, a pharmaceutical composition comprising the same, a pharmaceutical use thereof and an intermediate thereof.

摘要翻译： 本发明涉及由以下通式表示的5-脒基-N-（2-氨基苯乙基）-2-羟基苯磺酰胺衍生物：其中R 1是氢原子或低级烷基; R 2表示氢原子，任选取代的低级烷基等; R 3是二（低级烷基）氨基，低级烷基，环烷基等; Q是氢原子或任意取代的低级烷基; Z是氢原子或羟基等，或其药学上可接受的盐，其具有有效和选择性的活化凝血因子X抑制活性，并且可用作预防或治疗发生相关疾病的药剂 活化凝血因子X，包含其的药物组合物，其药物用途及其中间体。

公开(公告)号：US06520718B1

公开(公告)日：2003-02-18

申请号：US09763993

申请日：2001-02-27

申请人： Shigeki Nagatomo ,  Hideo Fujimoto ,  Shigehito Kaji ,  Hideki Takeuchi ,  Yoshio Mitarashi ,  Sohki Ohtsu ,  Tsuguo Takebayashi ,  Masakazu Ochiai ,  Takefumi Yamamoto ,  Yoshitomo Kinoshita

发明人： Shigeki Nagatomo ,  Hideo Fujimoto ,  Shigehito Kaji ,  Hideki Takeuchi ,  Yoshio Mitarashi ,  Sohki Ohtsu ,  Tsuguo Takebayashi ,  Masakazu Ochiai ,  Takefumi Yamamoto ,  Yoshitomo Kinoshita

IPC分类号： E21D1100

CPC分类号： E21D11/00 ,  E21D9/00 ,  E21D9/04 ,  E21D11/10 ,  E21D11/105

摘要： This invention relates to a method for boring a large-section tunnel safely and quickly by reinforcing and improving in advance the ground over the full length of the tunnel section, which includes; boring a top drift (2) through the full length of the tunnel (1) section, drilling curved holes inclined in forward or backward directions at an angle of about 45 degrees at preset intervals from the top drift (2) along the peripheral edges of the sections of the tunnel (1) by using ordinary small bore rock drills and curved steel pipes (3), pulling off the steel pipes (3) after inserting injection pipes into the drilled holes, injecting grout into the ground surrounding the tunnel through the injection pipes to develop artificial ground arches (4), excavating the tunnel (1), advancing suspension forms (6) and placing concrete for secondary lining.

摘要翻译： 本发明涉及一种通过在隧道的整个长度上预先加固和改善地面，安全，快速地镗孔大面积隧道的方法，其中包括： 将顶部漂移（2）穿过隧道（1）部分的整个长度，从顶部漂移（2）沿着沿着周向边缘的周边边缘以预定间隔以大约45度的角度沿前后方向倾斜弯曲的孔， 通过使用普通的小孔钻石和弯曲钢管（3），隧道（1）的部分，在将注入管插入钻孔后拔下钢管（3），通过隧道将灌浆注入隧道周围的地面 注入管道开发人造地面拱门（4），挖掘隧道（1），前进悬挂形式（6）和混凝土二次衬里。

公开(公告)号：US06255686B1

公开(公告)日：2001-07-03

申请号：US09124852

申请日：1998-07-30

申请人： Hideki Takeuchi ,  Hirohiko Izumi

发明人： Hideki Takeuchi ,  Hirohiko Izumi

IPC分类号： H01L27108

CPC分类号： H01L27/10855 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10885 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor storage device, an access transistor, which has a gate electrode and a pair of impurity diffusion layers, is formed at a device activation region defined by a device isolation structure of a semiconductor substrate. A first insulating film, which has a first contact hole for exposing a portion of the surface of one of the pair of impurity diffusion layers, is formed over the access transistor. A protective film, which has a second contact hole formed on the first contact hole, is formed on the first insulating film. A second insulating film is formed on the side wall faces of the first and second contact holes. A memory capacitor has a lower electrode and an upper part electrode which are opposed each other and are capacitive-coupled through a dielectric film. The lower electrode is filled inside the first and second contact holes to be formed in an island-like shape on the first insulating film through the protective film so as to be electrically connected with the one of the pair of impurity diffusion layers. Each of the first and second contact holes has a diameter which is made smaller by an existence of the second insulating film than a minimum dimension determined by an exposure limit in a photolithography.

摘要翻译： 在半导体存储装置中，在由半导体衬底的器件隔离结构限定的器件激活区域处形成具有栅电极和一对杂质扩散层的存取晶体管。 在该存取晶体管的上方形成第一绝缘膜，该第一绝缘膜具有用于暴露该对杂质扩散层之一的表面的一部分的第一接触孔。 在第一绝缘膜上形成有形成在第一接触孔上的第二接触孔的保护膜。 第二绝缘膜形成在第一和第二接触孔的侧壁面上。 记忆电容器具有彼此相对并且通过电介质膜电容耦合的下部电极和上部电极。 下部电极填充在第一和第二接触孔的内部，以通过保护膜在第一绝缘膜上形成为岛状，以便与一对杂质扩散层电连接。 第一和第二接触孔中的每一个具有通过第二绝缘膜的存在使得比通过光刻中的曝光极限确定的最小尺寸更小的直径。

公开(公告)号：US09169266B2

公开(公告)日：2015-10-27

申请号：US13577832

申请日：2011-02-09

申请人： Kazumichi Jo ,  Hideki Takeuchi

发明人： Kazumichi Jo ,  Hideki Takeuchi

IPC分类号： C07D495/04 ,  A61K31/519 ,  A61P15/08 ,  A61P15/16 ,  A61P35/00 ,  A61P15/18 ,  A61P5/24

CPC分类号： A61K31/519 ,  A61K9/0053 ,  A61K31/14 ,  C07B2200/13 ,  C07D495/04

摘要： An objective of the present invention is to improve the solubility of 3-[2-fluoro-5-(2,3-difluoro-6-methoxybenzyloxy)-4-methoxyphenyl]-2,4-dioxo-1,2,3,4-tetrahydrothieno[3,4-d]pyrimidine-5-carboxylic acid.The present invention provides 3-[2-fluoro-5-(2,3-difluoro-6-methoxybenzyl-oxy)-4-methoxyphenyl]-2,4-dioxo-1,2,3,4-tetrahydrothieno[3,4-d]pyrimidine-5-carboxylic acid choline salt has excellent solubility and storage stability.

摘要翻译： 本发明的目的是提高3- [2-氟-5-（2,3-二氟-6-甲氧基苄氧基）-4-甲氧基苯基] -2,4-二氧代-1,2,3,4-四氢 - 4-四氢噻吩并[3,4-d]嘧啶-5-甲酸。 本发明提供3- [2-氟-5-（2,3-二氟-6-甲氧基苄氧基）-4-甲氧基苯基] -2,4-二氧代-1,2,3,4-四氢噻吩并[ 4-d]嘧啶-5-羧酸胆碱盐具有优异的溶解性和储存稳定性。

公开(公告)号：US08354382B2

公开(公告)日：2013-01-15

申请号：US12988273

申请日：2009-04-13

申请人： Hideki Takeuchi ,  Eiji Tsuru

发明人： Hideki Takeuchi ,  Eiji Tsuru

IPC分类号： A01N43/04 ,  A61K31/70 ,  C07G3/00 ,  C07H15/00 ,  C07H17/00 ,  C07H17/02 ,  C07H23/00

CPC分类号： C07H17/02

摘要： The present invention provides a novel form of 3-(3-{4-[3-(β-D-glucopyranosyloxy)-5-isopropyl-1H-pyrazol-4-ylmethyl]-3-methylphenoxy}propylamino)-2,2-dimethylpropionamide with improved storage stability. Since 3-(3-{4-[3-(β-D-glucopyranosyloxy)-5-isopropyl-1H-pyrazol-4-ylmethyl]-3-methylphenoxy}-propylamino)-2,2-dimethylpropionamide hemifumarate dihydrate has extremely excellent storage stability, it is useful as a drug substance. Furthermore, it shows an extremely good crystalline property and can be purified by a convenient method, and therefore is suitable for the industrial preparation.

摘要翻译： 本发明提供3-（3- {4- [3-（＆bgr。-D-吡喃葡萄糖氧基）-5-异丙基-1H-吡唑-4-基甲基] -3-甲基苯氧基}丙基氨基） 具有改善的储存稳定性的2-二甲基丙酰胺。 由于3-（3- {4- [3-（＆bgr。-D-吡喃葡萄糖氧基）-5-异丙基-1H-吡唑-4-基甲基] -3-甲基苯氧基} - 丙基氨基）-2,2-二甲基丙酰胺半富马酸盐二水合物具有 极好的储存稳定性，作为药物有用。 此外，其显示出非常好的结晶性，并且可以通过方便的方法进行纯化，因此适用于工业制备。

公开(公告)号：US08329559B2

公开(公告)日：2012-12-11

申请号：US11737545

申请日：2007-04-19

申请人： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

发明人： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

摘要： In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

摘要翻译： 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US07589126B2

公开(公告)日：2009-09-15

申请号：US11553573

申请日：2006-10-27

申请人： Kosuke Okazaki ,  Masahiko Uchida ,  Harunobu Mukaiyama ,  Hiroaki Kobayashi ,  Yuichiro Kai ,  Hideki Takeuchi ,  Kenji Yokoyama ,  Yoshihiro Terao ,  Yuji Hoyano ,  Hiroaki Shiohara ,  Norihiko Kikuchi

发明人： Kosuke Okazaki ,  Masahiko Uchida ,  Harunobu Mukaiyama ,  Hiroaki Kobayashi ,  Yuichiro Kai ,  Hideki Takeuchi ,  Kenji Yokoyama ,  Yoshihiro Terao ,  Yuji Hoyano ,  Hiroaki Shiohara ,  Norihiko Kikuchi

IPC分类号： A61K31/195 ,  A61K31/18

CPC分类号： A61K31/18 ,  A61K31/40 ,  A61K31/421 ,  A61K31/445 ,  A61K31/5377 ,  A61K31/55 ,  A61K31/553 ,  C07C311/29 ,  C07C311/37 ,  C07C317/32 ,  C07C2601/14

摘要： The present invention relates to a 5-amidino-2-hydroxybenzenesulfonamide derivative represented by the general formula: wherein R1 is a hydrogen atom or an optionally substituted lower alkyl group; R2 is a di(lower alkyl)amino group, a lower alkyl group, a cycloalkyl group, an optionally substituted aryl group, an optionally substituted heterocycloalkyl group, or an optionally substituted aromatic heterocyclic group; T is an oxygen atom, a sulfur atom, a sulfonyl group etc.; Q is a hydrogen atom or an optionally substituted lower alkyl group; and Z is a hydrogen atom, a hydroxy group etc., or a pharmaceutically acceptable salt thereof, which exert a potent and selective activated blood coagulation factor X inhibitory activity and is useful as an agent for the prevention or treatment of a disease occurred associating an activated blood coagulation factor X, a pharmaceutical composition comprising the same, a pharmaceutical use thereof and an intermediate thereof.

摘要翻译： 本发明涉及由下列通式表示的5-脒基-2-羟基苯磺酰胺衍生物：其中R 1是氢原子或任意取代的低级烷基; R2是二（低级烷基）氨基，低级烷基，环烷基，任选取代的芳基，任选取代的杂环烷基或任选取代的芳族杂环基; T是氧原子，硫原子，磺酰基等; Q是氢原子或任意取代的低级烷基; Z是氢原子，羟基等，或其药学上可接受的盐，其具有有效和选择性的活化凝血因子X抑制活性，并且可用作预防或治疗疾病， 活化凝血因子X，包含其的药物组合物，其药物用途及其中间体。