公开(公告)号：US12094497B1

公开(公告)日：2024-09-17

申请号：US18240250

申请日：2023-08-30

Applicant: Headway Technologies, Inc.

Inventor： Shehrin Sayed ,  Wenyu Chen ,  Yue Liu ,  Kowang Liu ,  Tetsuya Roppongi ,  Haowen Ren ,  Yuhui Tang ,  Moris Musa Dovek ,  Wenjie Chen

IPC: G11B5/23 ,  G11B5/39

CPC classification number: G11B5/23 ,  G11B5/3906 ,  G11B2005/3996

Abstract: The present embodiments can generally provide a magnetic write head structure with optimized gap current distribution to maximize the current-assisted areal density capacity (ADC) gain in hard-disk-drive storage devices. In a first example embodiment, a non-dual-write-shield (nDWS) write head can include a main pole (MP), a trailing shield (TS), and a write gap (WG) disposed between the MP and the TS. The write head can also include a side shield (SS), a leading shield (LS), and a write shield (WS). The write head can include a side gap (SG) between the MP and the SS on both sides of the MP tip, and a leading gap (LG) between the MP and the LS. The write head can also include a coil wrapped around the MP through a PP3 shield that is configured to direct a time-dependent write current to saturate magnetization of the MP.

公开(公告)号：US12068008B2

公开(公告)日：2024-08-20

申请号：US18102975

申请日：2023-01-30

Applicant: Headway Technologies, Inc.

Inventor： Wenyu Chen ,  Shohei Kawasaki ,  Tetsuya Roppongi

IPC: G11B5/235 ,  G11B5/11 ,  G11B5/127 ,  G11B5/31 ,  G11B5/00 ,  G11B5/39

CPC classification number: G11B5/3146 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/3163 ,  G11B2005/0024 ,  G11B5/3912 ,  G11B5/3919 ,  G11B2005/3996

Abstract: A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.

公开(公告)号：US12014758B1

公开(公告)日：2024-06-18

申请号：US18106609

申请日：2023-02-07

Applicant: Headway Technologies, Inc.

Inventor： Weihao Xu ,  Tobias Maletzky

IPC: G11B11/105 ,  G11B5/00 ,  G11B5/31 ,  G11B5/60 ,  G11B13/08

CPC classification number: G11B5/6088 ,  G11B5/314 ,  G11B13/08 ,  G11B2005/0021

Abstract: The present embodiments relate to a heat-assisted magnetic recording (HAMR) write head with a NFT bi-layer structure with a bottom taper, which can be applied to one or both layers of the two layers. A heat-assisted magnetic recording (HAMR) write head can include a main pole including a tip portion configured to interact with a magnetic recording medium at an air-bearing surface (ABS). The HAMR write head can further include a near-field transducer (NFT) that includes a dielectric waveguide, a plasmon generator (PG) layer, and a second layer. The second layer can include a thermo-mechanically stable material disposed adjacent to the PG layer. Further, the PG layer and the second layer can form a taper angle relative to the ABS ranging between 30 and 60 degrees.

公开(公告)号：US11756577B2

公开(公告)日：2023-09-12

申请号：US17534574

申请日：2021-11-24

Applicant: Headway Technologies, Inc.

Inventor： Yan Wu

IPC: G11B5/012 ,  G11B5/127 ,  G11B5/02 ,  G11B5/31 ,  G11B5/11

CPC classification number: G11B5/012 ,  G11B5/02 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3133 ,  G11B5/3146

Abstract: A spin injection assisted magnetic recording structure is disclosed wherein a ferromagnetic (FM) layer and at least one spin preservation (SP) layer are formed between a main pole (MP) trailing side and a write shield (WS). Current (Ia) flows between the MP and WS, or is injected into the FM layer. As a result, the spin polarized electrons from the FM layer, which flow across one or two SP layers to generate a magnetization that enhances one or both of a local WS magnetization and return field, and a local MP magnetization and write field, respectively. A lead to the FM layer may be stitched to enable lower resistance and improve reliability. The FM layer may be recessed from the ABS to allow more overlap with the SP layer for lower current density while maintaining performance. Higher linear density and area density capability, and better reliability are achieved.

公开(公告)号：US11683994B2

公开(公告)日：2023-06-20

申请号：US17582190

申请日：2022-01-24

Applicant: Headway Technologies, Inc.

Inventor： Santiago Serrano Guisan ,  Luc Thomas ,  Jodi Mari Iwata ,  Guenole Jan ,  Ru-Ying Tong

IPC: H10N50/85 ,  H10N52/01 ,  H10N52/80 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/12

CPC classification number: H10N50/85 ,  G11C11/161 ,  H10N52/01 ,  H10N52/80

Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/μm2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

公开(公告)号：US20230083836A1

公开(公告)日：2023-03-16

申请号：US17472304

申请日：2021-09-10

Applicant: Headway Technologies, Inc.

Inventor： Ying Liu ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yue Liu

IPC: G11B5/31

Abstract: A magnetic recording writer is disclosed. In some embodiments, the writer includes a main pole having a front portion and a back portion, a gap layer surround the main pole at the ABS, and a shield structure. The front portion includes a pole tip at an ABS plane, a pole tip thickness in a down-track direction, and curved sidewalls on each side of a center plane that is orthogonal to the ABS and bisects the main pole. The back portion includes first flared sidewalls extending from the curved sidewalls at an angle between 0 and 25 degrees relative to planes parallel to the center plane. The shield structure includes sidewalls having a sidewall portion facing the main pole and formed substantially conformal to the curved sidewalls up to a height of about 30-200 nm where the sidewall portions no longer follow the shape of the main pole.

公开(公告)号：US11545175B2

公开(公告)日：2023-01-03

申请号：US17691869

申请日：2022-03-10

Applicant: Headway Technologies, Inc.

Inventor： Ying Liu ,  Shohei Kawasaki ,  Wenyu Chen ,  Yuhui Tang

IPC: G11B5/31 ,  G11B5/235 ,  G11B5/23 ,  G11B5/127 ,  G11B5/39 ,  G11B5/00

Abstract: A method of forming a spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator (STO) has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. The FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.

公开(公告)号：US20220165300A1

公开(公告)日：2022-05-26

申请号：US16953925

申请日：2020-11-20

Applicant: Headway Technologies, Inc.

Inventor： Ying Liu ,  Yuhui Tang ,  Yue Liu ,  Jiun-Ting Lee ,  Shengyuan Wang ,  Xiaomin Liu

IPC: G11B5/31 ,  G11B5/23 ,  G11B5/48

Abstract: A PMR (perpendicular magnetic recording) write head configured for thermally assisted magnetic recording (TAMR) and microwave assisted magnetic recording (MAMR) is made adaptive to writing at different frequencies by inserting thin layers of magnetic material into the material filling the side gaps (SG) between the magnetic pole (MP) and the side shields (SS). At high frequencies, the thin magnetic layers saturate and lower the magnetic potential of the bulky side shields

公开(公告)号：US11315597B1

公开(公告)日：2022-04-26

申请号：US17156920

申请日：2021-01-25

Applicant: Headway Technologies, Inc.

Inventor： Koji Shimazawa ,  Weihao Xu ,  Ken Fujii

IPC: G11B11/105 ,  G11B13/08 ,  G11B5/012 ,  G11B5/00 ,  G11B5/60 ,  G11B5/48

Abstract: A plasmon generator (PG) is formed between a waveguide and main pole, and has a front portion (Au/Rh bilayer) wherein the upper Rh layer has a peg shape at an air bearing surface (ABS), and a tapered backside that is separated from a PG back portion by a dielectric spacer. The lower Au layer has a front side recessed from the ABS and curved sides self-aligned with the Rh layer sides. A key feature is that the back section of lower Au layer curved side forms a smaller angle with a plane aligned orthogonal to the ABS than a front section thereof thereby selectively enabling a deformation of the back end of the Au layer during a heat treatment to >300° C. at the wafer level. Accordingly, the front end of the lower Au layer is densified and provides an improved heat sink to improve reliability and area density capability (ADC).

公开(公告)号：US11289116B1

公开(公告)日：2022-03-29

申请号：US16953903

申请日：2020-11-20

Applicant: Headway Technologies, Inc.

Inventor： Kowang Liu ,  Yuhui Tang ,  Siu Yin Ngan ,  Qinghua Zeng ,  Ellis Cha

IPC: G11B5/40 ,  G11B5/115 ,  G11B5/31 ,  G11B5/11 ,  G11B5/60

Abstract: A PMR, TAMR or MAMR (Perpendicular Magnetic Recording, Thermally Assisted Magnetic Recording or Microwave Assisted Magnetic Recording) slider-mounted read/write head produces less heat during operation by using magnetic read shields in which are embedded a patterned layer of thermally absorbing material. At least one shield includes a heating coil which is used to adjust the fly-height of the slider by creating a thermal protrusion at the slider ABS. When additional sources of energy, such as laser heating, microwave heating or the write coil itself, are applied to the recording medium, the shields can overheat, adversely affecting their performance. The patterned layer of heat absorbing material reduces the flow of heat from the thermal heating coil to the air bearing surface (ABS) thus cooling the region around the write head while not adversely affecting the shape of the thermal protrusion.