Method For Obtaining Primary Culture Tumour Cells From Tumour Tissue, In Particular Breast Carcinoma, Primary-Culture Tumour Cells And Their Use
    2.
    发明申请
    Method For Obtaining Primary Culture Tumour Cells From Tumour Tissue, In Particular Breast Carcinoma, Primary-Culture Tumour Cells And Their Use 审中-公开
    从肿瘤组织,特别是乳腺癌,原代培养的肿瘤细胞及其使用中获得原代培养肿瘤细胞的方法

    公开(公告)号:US20080176267A1

    公开(公告)日:2008-07-24

    申请号:US11910541

    申请日:2006-04-05

    IPC分类号: C12Q1/02 C12N5/02 C12N5/00

    摘要: The present invention relates to methods for obtaining primary-culture tumour cells from tumour tissue. More precisely, the present invention relates to a method for obtaining primary-culture tumour cells from tumour tissue, in particular breast carcinoma, where, in one method step, the tumour tissue is divided into tumour-tissue sections of a certain size, and these tissue sections are then cultured under defined conditions. The invention also concerns the primary-culture tumour cells that can be obtained by this method from the tumour tissue in particular primary-culture tumour cells from breast carcinoma Finally, the invention relates to the use of these primary-culture tumour cells for, among other things, determining an individual course of tumour treatment, or for testing and screening of new therapeutic agents against tumours.

    摘要翻译: 本发明涉及从肿瘤组织获得原代培养肿瘤细胞的方法。 更准确地说,本发明涉及从肿瘤组织特别是乳腺癌获得原代培养肿瘤细胞的方法,其中在一个方法步骤中,将肿瘤组织分成一定大小的肿瘤组织切片,这些 然后在限定的条件下培养组织切片。 本发明还涉及可以通过该方法从肿瘤组织特别是来自乳腺癌的原代培养肿瘤细胞获得的原代培养肿瘤细胞。最后,本发明涉及这些原代培养肿瘤细胞在其他方面的用途 确定肿瘤治疗的单独疗程,或用于测试和筛选新的肿瘤治疗剂。

    ASIC ELEMENT INCLUDING A VIA
    5.
    发明申请
    ASIC ELEMENT INCLUDING A VIA 有权
    ASIC元素包括威盛

    公开(公告)号:US20140374918A1

    公开(公告)日:2014-12-25

    申请号:US14307108

    申请日:2014-06-17

    IPC分类号: H01L23/48

    摘要: In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.

    摘要翻译: 在ASIC元件中,通孔被集成到ASIC基板的CMOS处理中。 ASIC元件包括其中实现电路功能的主动正面。 该至少一个通孔旨在在元件的主动前侧和后侧之间建立电连接。 通孔的前侧由完全填充的至少一个前侧沟槽限定,并且后侧由未完全填充的至少一个后侧沟槽限定。 后侧沟槽穿过填充的前侧沟槽。

    COMPONENT INCLUDING MEANS FOR REDUCING ASSEMBLY-RELATED MECHANICAL STRESSES AND METHODS FOR MANUFACTURING SAME
    6.
    发明申请
    COMPONENT INCLUDING MEANS FOR REDUCING ASSEMBLY-RELATED MECHANICAL STRESSES AND METHODS FOR MANUFACTURING SAME 审中-公开
    组件包括减少组装相关机械应力的方法及其制造方法

    公开(公告)号:US20140374853A1

    公开(公告)日:2014-12-25

    申请号:US14307662

    申请日:2014-06-18

    IPC分类号: B81C1/00 B81B3/00

    CPC分类号: B81B7/0048 H01L2224/16225

    摘要: Measures are provided for stress decoupling between a semiconductor component and its mounting support, these measures being implementable very easily, inexpensively and in a space-saving manner, regardless of the substrate thickness of the component, and not being limited to soldered connections but instead also being usable in conjunction with other mounting and joining techniques. These measures relate to components, which include at least one electrical and/or micromechanical functionality and at least one wiring level, which is formed in a layer structure on a main surface of the component substrate, at least one mounting surface being implemented in the wiring level to establish a mechanical and/or electrical connection of the component to a support. The at least one mounting surface is spring mounted and is separated from the layer structure in at least some areas for this purpose.

    摘要翻译: 提供了用于半导体部件与其安装支撑件之间的应力解耦的措施,这些措施可以非常容易地,低成本地且以节省空间的方式实现,而不管部件的基板厚度如何,而不仅限于焊接连接,而且还包括 可与其他安装和连接技术结合使用。 这些措施涉及组件,其包括至少一个电和/或微机械功能和至少一个布线层,其形成在部件基板的主表面上的层结构中,至少一个安装表面被实施在布线 以建立部件与支撑件的机械和/或电连接。 为此,至少一个安装表面是弹簧安装的,并且在至少一些区域中与层结构分离。