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    Method of growing carbon nanotubes and method of manufacturing field emission device using the same
    8.
    发明授权
    Method of growing carbon nanotubes and method of manufacturing field emission device using the same 有权
    生长碳纳米管的方法及使用其制造场致发射器件的方法

    公开(公告)号：US07744440B2

    公开(公告)日：2010-06-29

    申请号：US11476654

    申请日：2006-06-29

    申请人： Ha-Jin Kim ,  Sang-Mock Lee

    发明人： Ha-Jin Kim ,  Sang-Mock Lee

    IPC分类号： H01J9/00

    CPC分类号： B01J37/0244 ,  B01J23/38 ,  B01J23/74 ,  B01J33/00 ,  B01J37/347 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J9/025 ,  H01J2201/30469

    摘要： A method of growing carbon nanotubes and a method of manufacturing a field emission device using the same is provided. The method of growing carbon nanotubes includes steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes, forming an inactivation layer on the catalyst metal layer to reduce the activity of the catalyst metal layer, and growing carbon nanotubes on a surface of the catalyst metal layer. Because the inactivation layer partially covers the catalyst metal layer, carbon nanotubes are grown on a portion of the catalyst metal layer that is not covered by the inactivation layer. Thus, density of the carbon nanotubes can be controlled. This method for growing carbon nanotubes can be used to make an emitter of a field emission device. The field emission device having carbon nanotube emitter made of this method has superior electron emission characteristics.

    摘要翻译： 提供生长碳纳米管的方法和制造使用其的场致发射器件的方法。 生长碳纳米管的方法包括制备基材的步骤，在基材上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成失活层以降低催化剂金属层的活性和生长碳 纳米管在催化剂金属层的表面上。 因为失活层部分地覆盖催化剂金属层，所以在催化剂金属层的未被钝化层覆盖的部分上生长碳纳米管。 因此，可以控制碳纳米管的密度。 用于生长碳纳米管的这种方法可用于制造场致发射器件的发射极。 具有由该方法制成的碳纳米管发射体的场发射器件具有优异的电子发射特性。

    Method of growing carbon nanotubes and method of manufacturing field emission device using the same
    10.
    发明授权
    Method of growing carbon nanotubes and method of manufacturing field emission device using the same 失效
    生长碳纳米管的方法及使用其制造场致发射器件的方法

    公开(公告)号：US07479052B2

    公开(公告)日：2009-01-20

    申请号：US11476653

    申请日：2006-06-29

    申请人： Ha-Jin Kim ,  In-Taek Han

    发明人： Ha-Jin Kim ,  In-Taek Han

    IPC分类号： H01J9/00 ,  D01F9/12 ,  C23C16/00

    CPC分类号： H01J1/304 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/876

    摘要： Methods of growing carbon nanotubes and manufacturing a field emission device using the carbon nanotubes are provided. The method of growing carbon nanotubes includes the steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote the growing of the carbon nanotubes, forming an amorphous carbon layer on the catalyst metal layer where the amorphous carbon layer partially covers the catalyst metal layer, and growing the carbon nanotubes from a surface of the catalyst metal layer. The carbon nanotubes are grown in a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. In the method of growing carbon nanotubes, the carbon nanotubes are grow at a low temperature. A density of carbon nanotubes can be controlled to improve field emission characteristics of an emitter of a field emission device.

    摘要翻译： 提供生长碳纳米管的方法和制造使用碳纳米管的场致发射器件。 生长碳纳米管的方法包括以下步骤：制备衬底，在衬底上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成无定形碳层，其中无定形碳层部分覆盖催化剂 金属层，并从催化剂金属层的表面生长碳纳米管。 碳纳米管生长在未被无定形碳层覆盖的催化剂金属层表面的一部分中。 在生长碳纳米管的方法中，碳纳米管在低温下生长。 可以控制碳纳米管的密度以改善场致发射器件的发射极的场发射特性。