公开(公告)号：US20120032078A1

公开(公告)日：2012-02-09

申请号：US13197632

申请日：2011-08-03

Applicant: Michael Alwin William Stekelenburg ,  Gerrit Cornelis Van Hoften ,  Richard Henderson ,  Renato Andrea Danilo Turchetta ,  Nicola Carlo Guerrini ,  Joeri Lof ,  Frank Jeroen Pieter Schuurmans ,  Abdul Raffey Faruqi ,  Gregory James McMullan

Inventor： Michael Alwin William Stekelenburg ,  Gerrit Cornelis Van Hoften ,  Richard Henderson ,  Renato Andrea Danilo Turchetta ,  Nicola Carlo Guerrini ,  Joeri Lof ,  Frank Jeroen Pieter Schuurmans ,  Abdul Raffey Faruqi ,  Gregory James McMullan

IPC: G01N23/04

CPC classification number: H01J37/244 ,  H01J37/22 ,  H01J37/26 ,  H01J37/263 ,  H01J2237/2441 ,  H01J2237/24455 ,  H01J2237/2446 ,  H01J2237/2447 ,  H01J2237/24578 ,  H01J2237/26 ,  H01J2237/2802

Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.

Abstract translation: 在直接电子检测器中，防止电子从传感器下方向检测器体积的后向散射。 在一些实施例中，在传感器下面保持空的空间。 在其他实施例中，传感器下面的结构包括几何，例如多个高方面比例的通道，延伸到传感器或从传感器捕获电子，或倾斜表面的结构以偏转通过传感器的电子。

公开(公告)号：US08492715B2

公开(公告)日：2013-07-23

申请号：US13441344

申请日：2012-04-06

Applicant: Maximus Theodorus Otten ,  Gerrit Cornelis Van Hoften ,  Joeri Lof

Inventor： Maximus Theodorus Otten ,  Gerrit Cornelis Van Hoften ,  Joeri Lof

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/26 ,  H01J37/244 ,  H01J37/302 ,  H01J2237/0203 ,  H01J2237/043 ,  H01J2237/065 ,  H01J2237/22 ,  H01J2237/2441 ,  H01J2237/24455 ,  H01J2237/24507 ,  H01J2237/26 ,  H01J2237/262 ,  H01J2237/2802

Abstract: The invention relates to a Method of protecting a direct electron detector (151) in a TEM. The invention involves predicting the current density on the detector before setting new beam parameters, such as changes to the excitation of condenser lenses (104), projector lenses (106) and/or beam energy. The prediction is made using an optical model or a Look-Up-Table. When the predicted exposure of the detector is less than a predetermined value, the desired changes are made, otherwise a warning message is generated and changes to the settings are postponed.

Abstract translation: 本发明涉及一种在TEM中保护直接电子检测器（151）的方法。 本发明涉及在设置新的光束参数之前预测检测器上的电流密度，例如对聚光透镜（104），投影透镜（106）和/或光束能量的激发的改变。 使用光学模型或查找表进行预测。 当检测器的预测曝光小于预定值时，进行所需的改变，否则产生警告消息并延迟对设置的改变。

公开(公告)号：US20120256085A1

公开(公告)日：2012-10-11

申请号：US13441344

申请日：2012-04-06

Applicant: Maximus Theodorus Otten ,  Gerrit Cornelis van Hoften ,  Joeri Lof

Inventor： Maximus Theodorus Otten ,  Gerrit Cornelis van Hoften ,  Joeri Lof

IPC: H01J37/26

CPC classification number: H01J37/26 ,  H01J37/244 ,  H01J37/302 ,  H01J2237/0203 ,  H01J2237/043 ,  H01J2237/065 ,  H01J2237/22 ,  H01J2237/2441 ,  H01J2237/24455 ,  H01J2237/24507 ,  H01J2237/26 ,  H01J2237/262 ,  H01J2237/2802

Abstract: The invention relates to a Method of protecting a direct electron detector (151) in a TEM. The invention involves predicting the current density on the detector before setting new beam parameters, such as changes to the excitation of condenser lenses (104), projector lenses (106) and/or beam energy. The prediction is made using an optical model or a Look-Up-Table. When the predicted exposure of the detector is less than a predetermined value, the desired changes are made, otherwise a warning message is generated and changes to the settings are postponed.

Abstract translation: 本发明涉及一种在TEM中保护直接电子检测器（151）的方法。 本发明涉及在设置新的光束参数之前预测检测器上的电流密度，例如对聚光透镜（104），投影透镜（106）和/或光束能量的激发的改变。 使用光学模型或查找表进行预测。 当检测器的预测曝光小于预定值时，进行所需的改变，否则产生警告消息并延迟对设置的改变。

公开(公告)号：US08618498B2

公开(公告)日：2013-12-31

申请号：US13197632

申请日：2011-08-03

Applicant: Gerrit Cornelis Van Hoften ,  Michael Alwin William Stekelenburg ,  Richard Henderson ,  Gregory James McMullan ,  Abdul Raffey Faruqi ,  Renato Andrea Danilo Turchetta ,  Nicola Carlo Guerrini ,  Joeri Lof ,  Frank Jeroen Pieter Schuurmans

Inventor： Gerrit Cornelis Van Hoften ,  Michael Alwin William Stekelenburg ,  Richard Henderson ,  Gregory James McMullan ,  Abdul Raffey Faruqi ,  Renato Andrea Danilo Turchetta ,  Nicola Carlo Guerrini ,  Joeri Lof ,  Frank Jeroen Pieter Schuurmans

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J37/22 ,  H01J37/26 ,  H01J37/263 ,  H01J2237/2441 ,  H01J2237/24455 ,  H01J2237/2446 ,  H01J2237/2447 ,  H01J2237/24578 ,  H01J2237/26 ,  H01J2237/2802

Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.

Abstract translation: 在直接电子检测器中，防止电子从传感器下方向检测器体积的后向散射。 在一些实施例中，在传感器下面保持空的空间。 在其他实施例中，传感器下面的结构包括几何，例如多个高方面比例的通道，延伸到传感器或从传感器捕获电子，或倾斜表面的结构以偏转通过传感器的电子。

公开(公告)号：US08592762B2

公开(公告)日：2013-11-26

申请号：US13096865

申请日：2011-04-28

Applicant: Uwe Luecken ,  Alan Frank de Jong ,  Gerrit Cornelis van Hoften ,  Frank Jeroen Pieter Schuurmans

Inventor： Uwe Luecken ,  Alan Frank de Jong ,  Gerrit Cornelis van Hoften ,  Frank Jeroen Pieter Schuurmans

IPC: H01J37/26

CPC classification number: H01J37/244 ,  H01J37/256 ,  H01J37/26 ,  H01J37/265 ,  H01J37/2955 ,  H01J2237/05 ,  H01J2237/221 ,  H01J2237/2446

Abstract: A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the center of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.

Abstract translation: 在TEM中使用直接电子检测器的方法，其中具有高强度峰的图像，例如衍射图或EELS光谱，在所述检测器上成像。 众所周知，高强度峰值可能会损坏检测器。 为了避免这种损伤，图像的中心被移动，结果是检测器的一个位置没有暴露于高强度，但是高强度被污染在检测器上，在损坏结果之前移位高强度峰值。

公开(公告)号：US20110266439A1

公开(公告)日：2011-11-03

申请号：US13096865

申请日：2011-04-28

Applicant: Uwe Luecken ,  Alan Frank de Jong ,  Gerrit Cornelis van Hoften ,  Frank Jeroen Pieter Schuurmans

Inventor： Uwe Luecken ,  Alan Frank de Jong ,  Gerrit Cornelis van Hoften ,  Frank Jeroen Pieter Schuurmans

IPC: H01J37/295

CPC classification number: H01J37/244 ,  H01J37/256 ,  H01J37/26 ,  H01J37/265 ,  H01J37/2955 ,  H01J2237/05 ,  H01J2237/221 ,  H01J2237/2446

Abstract: A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the centre of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.

Abstract translation: 在TEM中使用直接电子检测器的方法，其中具有高强度峰的图像，例如衍射图或EELS光谱，在所述检测器上成像。 众所周知，高强度峰值可能会损坏检测器。 为了避免这种损伤，图像的中心被移动，结果是检测器的一个位置没有暴露于高强度，但是高强度被污染在检测器上，在损坏结果之前移位高强度峰值。