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25 条记录 (耗时 0.018 秒)

    Polarization state converter
    1.
    发明授权
    Polarization state converter 失效
    极化状态转换器

    公开(公告)号：US5493624A

    公开(公告)日：1996-02-20

    申请号：US344551

    申请日：1994-11-23

    申请人： George H. B. Thompson

    发明人： George H. B. Thompson

    IPC分类号： G02B6/126 ,  G02B6/14 ,  G02B6/00

    CPC分类号： G02B6/14 ,  G02B6/126

    摘要： An integrated optics polarization state converter comprises optically in series a first TM.sub.0 to TM.sub.1 mode converter that is substantially transparent to TE.sub.0, a concatenation of total internal reflectors and a second TM.sub.0 to TM.sub.1 converter, similarly substantially transparent to TE.sub.0, which is connected the way round so as to operate as a TM.sub.1 to TM.sub.0 converter. Each TM.sub.0 to TM.sub.1 converter may comprise a tandem arrangement of a 2.times.2 TE.sub.0 /TM.sub.0 polarization beam splitting coupler and a mismatched, 3 dB maximum, 2.times.2 beam splitting coupler. The place of the TM.sub.0 to TM.sub.1 converters substantially transparent to TE.sub.0 may be taken by TE.sub.0 to TE.sub.1 converters substantially transparent to TM.sub.0.

    摘要翻译： 集成光学偏振状态转换器包括光学地串联第一TM0至TM1模式转换器，其对于TE0基本上是透明的，总内部反射器的级联和第二TM0至TM1转换器类似地基本上透明于TE0，其连接在一起 以便作为TM1到TM0转换器工作。 每个TM0至TM1转换器可以包括2x2TE0 / TM0偏振分束耦合器和不匹配的3dB最大2×2分束耦合器的串联布置。 对TE0基本透明的TM0至TM1转换器的位置可以由基本上对TM0透明的TE0至TE1转换器来实现。

    Semiconductor device manufacture
    2.
    发明授权
    Semiconductor device manufacture 失效
    半导体器件制造

    公开(公告)号：US5196368A

    公开(公告)日：1993-03-23

    申请号：US697096

    申请日：1991-05-08

    申请人： George H. B. Thompson ,  Piers J. G. Dawe ,  David A. H. Spear

    发明人： George H. B. Thompson ,  Piers J. G. Dawe ,  David A. H. Spear

    IPC分类号： H01L21/20 ,  H01L21/8252

    CPC分类号： H01L21/8252 ,  Y10S148/05 ,  Y10S148/106

    摘要： A technique for achieving a substantially planar structure incorporating embedded vapor phase epitaxial growth involves the use of a window-frame shaped mask 40 of epitaxial growth resistant material to define a well in which embedded growth is to occur, and subsequently to ease mask registration problems in the location of a mask 60 employed while selectively removing unwanted material epitaxially grown on regions surrounding the well. Complementary format structures may also be formed in which epitaxial growth is provided up the sides of a mesa to substantially the same height as material grown on top of the mesa itself.

    摘要翻译： 用于实现包含嵌入式气相外延生长的基本上平面结构的技术涉及使用外延生长阻力材料的窗框形掩模40来限定其中将发生嵌入式生长的井，并且随后简化掩模配准问题 使用掩模60的位置，同时选择性地除去外围生长在井周围的区域上的不需要的材料。 还可以形成互补格式结构，其中外延生长在台面的侧面提供到与台面本身顶部生长的材料基本相同的高度。

    Photo-detectors
    3.
    发明授权
    Photo-detectors 失效
    光电探测器

    公开(公告)号：US4740823A

    公开(公告)日：1988-04-26

    申请号：US791197

    申请日：1985-10-25

    申请人： George H. B. Thompson

    发明人： George H. B. Thompson

    IPC分类号： G01J1/02 ,  H01L21/338 ,  H01L27/144 ,  H01L29/778 ,  H01L29/812 ,  H01L31/09 ,  H01L31/107 ,  H01L27/14

    CPC分类号： H01L27/1443 ,  H01L31/09

    摘要： A photo-detector includes a photoconductor comprised by a structure similaro a high electron mobility transistor (HEMT) but with the gate removed and the layer of high band gap thinned in order to reduce noise. On a semi-insulating substrate (8), an n-channel layer (9) is disposed and on channel layer (9) is disposed on n.sup.+ layer (7). Light incident on the n.sup.+ layer (7) causes electron-hole pairs to be generated in layer 9, the electrons and holes of which migrate to oppositely biased contact regions 10 and 11 respectively. The photoconductor is monolithically integrated with an HEMT (TI) (FIG. 3, FIG. 4 or FIG. 6) the latter comprising a pre-amplifier for a receiver circuit. In dependence on the materials chosen the photo-detector may be employed to detect wavelengths of the order of

    摘要翻译： 光检测器包括由类似于高电子迁移率晶体管（HEMT）的结构组成的光电导体，但是去除了栅极并且为了降低噪声而使高带隙层变薄。 在半绝缘基板（8）上，设置n沟道层（9），在沟道层（9）上设置n +层（7）。 入射到n +层（7）上的光使层9中产生电子 - 空穴对，其中电子和空穴分别迁移到相对偏压的接触区域10和11。 光电导体与HEMT（TI）（图3，图4或图6）单片集成，后者包括用于接收器电路的前置放大器。 根据所选择的材料，可以使用光电检测器来检测大小<8.88μm或<1.6μm的波长。

    Planar waveguide dispersion compensator
    5.
    发明授权
    Planar waveguide dispersion compensator 失效
    平面波导色散补偿器

    公开(公告)号：US06690855B2

    公开(公告)日：2004-02-10

    申请号：US09902362

    申请日：2001-07-10

    申请人： George H B Thompson ,  James Whiteaway ,  Terry Bricheno

    发明人： George H B Thompson ,  James Whiteaway ,  Terry Bricheno

    IPC分类号： G02B626

    CPC分类号： G02B6/29394 ,  G02B6/12011 ,  G02B6/12019 ,  G02B6/12028 ,  G02B2006/12102

    摘要： A planar dispersion compensator for an optical signal is provided. The compensator decomposes an inputted optical signal into N component signals separated by a fractional wavelength &dgr;&lgr;. Each component signal has its path-length adjusted to induce a sufficient phase shift between input and output to change the group delay of the optical signal when recombined from each of the component signals. In this manner, pulse broadening can be compensated by selectively varying the induced phase shifts to produce the desired level of opposite group delay. Portions of the substrate of the planar waveguide are removed to improve thermal responsiveness of the path-length adjustment means.

    摘要翻译： 提供了一种用于光信号的平面色散补偿器。 补偿器将输入的光信号分解成由分数波长偏差λ分离的N个分量信号。 每个分量信号的路径长度被调整以在输入和输出之间引起足够的相移，以便当从每个分量信号重组时改变光信号的群延迟。 以这种方式，可以通过选择性地改变感应相移以产生期望的相对群延迟水平来补偿脉冲展宽。 除去平面波导的基板的部分，以提高路径长度调节装置的热响应性。

    Fabrication of injection lasers utilizing epitaxial growth and selective diffusion
    8.
    发明授权
    Fabrication of injection lasers utilizing epitaxial growth and selective diffusion 失效
    使用外延生长和选择性扩散的注射激光器的制造

    公开(公告)号：US4213808A

    公开(公告)日：1980-07-22

    申请号：US891886

    申请日：1978-03-30

    申请人： George H. B. Thompson ,  David F. Lovelace

    发明人： George H. B. Thompson ,  David F. Lovelace

    IPC分类号： H01S5/00 ,  H01L33/00 ,  H01S5/042 ,  H01L21/225 ,  H01L21/205

    CPC分类号： H01L33/0025

    摘要： Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. This is preferable to the method used in the parent case of growing a zinc doped layer because epitaxial growth is liable to be accompanied by zinc diffusion into regions where it is not required. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.

    摘要翻译： 掺杂锌的多孔二氧化硅在肋状激光器的构造中用作p型掺杂剂源。 这优于用于生长锌掺杂层的母体情况中使用的方法，因为外延生长易于伴随着锌扩散到不需要的区域。 其他修改包括允许锌扩散直接穿过有源层并且使器件尺寸使得横向光学引导不受肋的影响。