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    Fabrication of injection lasers utilizing epitaxial growth and selective diffusion
    3.
    发明授权
    Fabrication of injection lasers utilizing epitaxial growth and selective diffusion 失效
    使用外延生长和选择性扩散的注射激光器的制造

    公开(公告)号：US4213808A

    公开(公告)日：1980-07-22

    申请号：US891886

    申请日：1978-03-30

    申请人： George H. B. Thompson ,  David F. Lovelace

    发明人： George H. B. Thompson ,  David F. Lovelace

    IPC分类号： H01S5/00 ,  H01L33/00 ,  H01S5/042 ,  H01L21/225 ,  H01L21/205

    CPC分类号： H01L33/0025

    摘要： Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. This is preferable to the method used in the parent case of growing a zinc doped layer because epitaxial growth is liable to be accompanied by zinc diffusion into regions where it is not required. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.

    摘要翻译： 掺杂锌的多孔二氧化硅在肋状激光器的构造中用作p型掺杂剂源。 这优于用于生长锌掺杂层的母体情况中使用的方法，因为外延生长易于伴随着锌扩散到不需要的区域。 其他修改包括允许锌扩散直接穿过有源层并且使器件尺寸使得横向光学引导不受肋的影响。

    Semiconductor etching
    5.
    发明授权
    Semiconductor etching 失效
    SEMICONDUCTOR ETCHING

    公开(公告)号：US4142953A

    公开(公告)日：1979-03-06

    申请号：US891885

    申请日：1978-03-30

    申请人： David F. Lovelace

    发明人： David F. Lovelace

    IPC分类号： C25F3/12 ,  C25F7/00 ,  H01L21/306 ,  H01L21/3063 ,  C25F3/14

    CPC分类号： C25F7/00 ,  C25F3/12 ,  H01L21/30635

    摘要： KOH can be used as the electrolyte for self-limiting etching of GaAs to preferentially remove p-type material from n-type material but does not work with GaAlAs because etching is halted by the precipitation of aluminium hydroxide. An aqueous solution of triethanolamine has been found to be an alternative electrolyte which does not suffer from this problem. Preferably no external drive voltage is used but instead the current flow is promoted by the e.m.f. developed by the etching cell itself.