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    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
    1.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
    磁阻效应元件和磁记忆

    公开(公告)号：US20130141966A1

    公开(公告)日：2013-06-06

    申请号：US13701257

    申请日：2011-05-26

    Applicant: Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    Inventor： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    IPC: G11C11/16 ,  H01L43/02

    CPC classification number: G11C11/16 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.

    Abstract translation: 提供了具有与膜平面垂直的稳定磁化方向的磁阻效应元件和可以通过磁畴壁运动进行写入的受控磁阻比，以及包括磁阻效应元件的磁存储器。 通过从包括至少一种类型的3d过渡金属或Heusler合金的铁磁材料形成磁阻效应元件的铁磁层来控制磁阻比。 通过在原子层上控制铁磁层的膜厚度，将磁化方向从膜平面的方向转变为垂直于膜平面的方向。

    Magnetoresistive element and magnetic memory
    3.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US09450177B2

    公开(公告)日：2016-09-20

    申请号：US13578866

    申请日：2011-02-14

    Applicant: Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    Inventor： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    Abstract: There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

    Abstract translation: 提供了一种磁阻元件，其磁化方向在垂直于膜表面的方向上是稳定的并且其磁阻比被控制，以及使用这种磁阻元件的磁存储器。 通过使形成磁阻元件的铁磁层的材料包含含有至少一种类型的3d过渡金属或Heusler合金的铁磁材料，以控制磁阻比，并且通过控制原子层上的铁磁层的厚度 磁化方向从膜表面垂直于膜表面进行平面切换。

    Current Injection Magnetic Domain Wall Moving Element
    4.
    发明申请
    Current Injection Magnetic Domain Wall Moving Element 有权
    电流注入磁畴壁移动元件

    公开(公告)号：US20080137405A1

    公开(公告)日：2008-06-12

    申请号：US10585638

    申请日：2005-01-14

    Applicant: Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba ,  Michihiko Yamanouchi

    Inventor： Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba ,  Michihiko Yamanouchi

    IPC: G11C11/15

    CPC classification number: H01L43/08 ,  G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    Abstract: The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.

    Abstract translation: 本发明提供一种电流注入型磁畴壁运动装置，其不需要用于反转铁磁体的磁化方向的外部磁场并且具有低功耗。 电流注入型磁畴壁运动装置包括具有彼此反平行的磁化方向的两个磁体（第一磁体1和第二磁体2）和夹在其间的第三磁体3的微结构结构。 以这样的方式控制器件的磁化方向：使脉冲电流（电流密度为10×10 -7 / A 2 / cm 2 / >）施加在微结结构中存在的结界面上，使得磁畴壁通过磁畴壁与电流在与电流或电流相反的方向相同的方向上的相互作用而移动 。

    Nonvolatile solid state magnetic memory and recording method thereof
    5.
    发明授权
    Nonvolatile solid state magnetic memory and recording method thereof 有权
    非易失性固态磁存储器及其记录方法

    公开(公告)号：US08310867B2

    公开(公告)日：2012-11-13

    申请号：US12682044

    申请日：2008-10-03

    Applicant: Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba

    Inventor： Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba

    IPC: G11C11/14 ,  G11C11/15 ,  G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/10

    Abstract: A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed.

    Abstract translation: 一种具有超低功耗的非易失性固态磁存储器及其记录方法，所述存储器包括具有可通过增加或减少载流子浓度而改变的磁各向异性的磁性材料，其中易磁化轴的方向 通过增加或减少载流子浓度来控制磁化取向容易。 包括磁性材料的记录层的非挥发性固态磁存储器及其记录方法，其中记录层中的载流子（电子或空穴）浓度增加和/或减少，由此磁化被旋转或反转， 执行记录操作。

    Magnetoresistive Element and Magnetic Memory
    8.
    发明申请
    Magnetoresistive Element and Magnetic Memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US20120320666A1

    公开(公告)日：2012-12-20

    申请号：US13578866

    申请日：2011-02-14

    Applicant: Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    Inventor： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    IPC: G11C11/15 ,  G11B5/673

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    Abstract: There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

    Abstract translation: 提供了一种磁阻元件，其磁化方向在垂直于膜表面的方向上是稳定的并且其磁阻比被控制，以及使用这种磁阻元件的磁存储器。 通过使形成磁阻元件的铁磁层的材料包含含有至少一种类型的3d过渡金属或Heusler合金的铁磁材料，以控制磁阻比，并且通过控制原子层上的铁磁层的厚度 磁化方向从膜表面垂直于膜表面进行平面切换。

    Current injection magnetic domain wall moving element
    9.
    发明授权
    Current injection magnetic domain wall moving element 有权
    电流注入磁畴壁移动元件

    公开(公告)号：US08331140B2

    公开(公告)日：2012-12-11

    申请号：US10585638

    申请日：2005-01-14

    Applicant: Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba ,  Michihiko Yamanouchi

    Inventor： Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba ,  Michihiko Yamanouchi

    IPC: G11C11/15

    CPC classification number: H01L43/08 ,  G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    Abstract: The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.

    Abstract translation: 本发明提供一种电流注入型磁畴壁运动装置，其不需要用于反转铁磁体的磁化方向的外部磁场并且具有低功耗。 电流注入型磁畴壁运动装置包括具有彼此反平行的磁化方向的两个磁体（第一磁体1和第二磁体2）和夹在其间的第三磁体3的微结构结构。 以这样的方式控制器件的磁化方向，使脉冲电流（电流密度为104-107A / cm2）施加在微结结构中存在的结界面上，使得磁畴壁通过 磁畴壁和电流与电流方向相同或与电流方向相反。

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