公开(公告)号：US20120291863A1

公开(公告)日：2012-11-22

申请号：US13424674

申请日：2012-03-20

Applicant: Dong-Chul SUH ,  Kyoung-Jin Seo ,  Hyun-Jong Kim ,  Byong-Gook Jeong ,  June-Hyuk Jung

Inventor： Dong-Chul SUH ,  Kyoung-Jin Seo ,  Hyun-Jong Kim ,  Byong-Gook Jeong ,  June-Hyuk Jung

IPC: H01L31/0216 ,  H01L31/0236 ,  C23C16/455 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a base substrate including a first surface and a second surface opposite the first surface, the base substrate being configured to have sunlight incident on the first surface, a doping layer on the first surface of the base substrate, a first passivation layer on the doping layer, the first passivation layer including hydrogen, a first capping layer on the first passivation layer, the first capping layer being configured to prevent discharge of hydrogen from the first passivation layer, a first electrode on the first capping layer, and a second electrode on the second surface of the base substrate.

Abstract translation: 太阳能电池包括：基底，其包括第一表面和与第一表面相对的第二表面，所述基底基底被配置为具有入射在所述第一表面上的阳光，所述基底基板的第一表面上的掺杂层，第一钝化层 在所述掺杂层上，所述第一钝化层包括氢，所述第一钝化层上的第一覆盖层，所述第一覆盖层被配置为防止氢从所述第一钝化层排出，所述第一覆盖层上的第一电极和 第二电极在基底基板的第二表面上。

公开(公告)号：US20110155244A1

公开(公告)日：2011-06-30

申请号：US12781240

申请日：2010-05-17

Applicant: Dong-Chul SUH

Inventor： Dong-Chul SUH

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is a solar cell including; a semiconductor substrate including a p-type layer and an n-type layer, a dielectric layer disposed on a surface of the semiconductor substrate, wherein the dielectric layer includes a plurality of penetrating parts, a first electrode electrically connected to the p-type layer of the semiconductor substrate, and a second electrode electrically connected to the n-type layer of the semiconductor substrate, wherein the first electrode includes; a fusion part which comprises a melt blend of a semiconductor material and a metal material and which is disposed within the plurality of penetrating parts of the dielectric layer, and a metal part which includes a metal material and is disposed on a surface of one side of the dielectric layer.

Abstract translation: 公开了一种太阳能电池，包括： 包括p型层和n型层的半导体衬底，设置在所述半导体衬底的表面上的电介质层，其中所述电介质层包括多个穿透部分，第一电极，电连接到所述p型层 和与半导体衬底的n型层电连接的第二电极，其中第一电极包括： 包括半导体材料和金属材料的熔融共混物并且设置在电介质层的多个穿透部分内的熔融部分，以及金属部件，其包括金属材料并且设置在金属材料的一侧的表面上 电介质层。

公开(公告)号：US08647914B2

公开(公告)日：2014-02-11

申请号：US13242787

申请日：2011-09-23

Applicant: Kyoung-Jin Seo ,  Yoon-Mook Kang ,  Min-Chul Song ,  Dong-Chul Suh ,  Ju-Hee Song

Inventor： Kyoung-Jin Seo ,  Yoon-Mook Kang ,  Min-Chul Song ,  Dong-Chul Suh ,  Ju-Hee Song

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell includes forming an emitter layer of a second conductive type on a front surface and a back surface of a substrate of a first conductive type opposite to the second conductive type, forming an anti-reflection layer on the front surface of the substrate, partially removing the anti-reflection layer and the emitter layer to form an isolation groove dividing the emitter layer into a plurality of regions, removing a portion of the emitter layer formed on the back surface of the substrate, and forming a passivation layer covering the isolation groove and the back surface of the substrate.

Abstract translation: 一种制造太阳能电池的方法包括在与第二导电类型相反的第一导电类型的基板的前表面和后表面上形成第二导电类型的发射极层，在前表面上形成防反射层 部分地去除抗反射层和发射极层，以形成将发射极层分成多个区域的隔离槽，去除形成在衬底背面上的发射极层的一部分，并形成钝化层 覆盖隔离槽和衬底的背面。

公开(公告)号：US20070158831A1

公开(公告)日：2007-07-12

申请号：US11621513

申请日：2007-01-09

Applicant: Yong-Won CHA ,  Dong-Chul SUH ,  Dae-Lok BAE

Inventor： Yong-Won CHA ,  Dong-Chul SUH ,  Dae-Lok BAE

IPC: H01L23/34 ,  H01L21/00

CPC classification number: H01L23/34 ,  H01L21/76254 ,  H01L21/84

Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.

Abstract translation: 提供一种制造三维半导体器件的方法以及由此制造的三维半导体器件。 该方法包括形成导热塞以将热量从衬底上的器件引导出来，同时在堆叠的半导体层上进行高温处理。 在堆叠的半导体层上使用高温工艺而不会不利地影响衬底上的器件的能力允许形成高质量的单晶层叠半导体层。 然后可以使用高质量的单晶半导体层来制造改进的薄膜晶体管。

公开(公告)号：US20120247548A1

公开(公告)日：2012-10-04

申请号：US13242787

申请日：2011-09-23

Applicant: Kyoung-Jin SEO ,  Yoon-Mook KANG ,  Min-Chul SONG ,  Dong-Chul SUH ,  Ju-Hee SONG

Inventor： Kyoung-Jin SEO ,  Yoon-Mook KANG ,  Min-Chul SONG ,  Dong-Chul SUH ,  Ju-Hee SONG

IPC: H01L31/0224 ,  H01L31/0232

CPC classification number: H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell includes forming an emitter layer of a second conductive type on a front surface and a back surface of a substrate of a first conductive type opposite to the second conductive type, forming an anti-reflection layer on the front surface of the substrate, partially removing the anti-reflection layer and the emitter layer to form an isolation groove dividing the emitter layer into a plurality of regions, removing a portion of the emitter layer formed on the back surface of the substrate, and forming a passivation layer covering the isolation groove and the back surface of the substrate.

Abstract translation: 一种制造太阳能电池的方法包括在与第二导电类型相反的第一导电类型的基板的前表面和后表面上形成第二导电类型的发射极层，在前表面上形成防反射层 部分地去除抗反射层和发射极层，以形成将发射极层分成多个区域的隔离槽，去除形成在衬底背面上的发射极层的一部分，并形成钝化层 覆盖隔离槽和衬底的背面。

公开(公告)号：US07867924B2

公开(公告)日：2011-01-11

申请号：US12038278

申请日：2008-02-27

Applicant: Jong-wan Choi ,  Eun-kyung Baek ,  Sang-hoon Ahn ,  Hong-gun Kim ,  Dong-chul Suh ,  Yong-soon Choi

Inventor： Jong-wan Choi ,  Eun-kyung Baek ,  Sang-hoon Ahn ,  Hong-gun Kim ,  Dong-chul Suh ,  Yong-soon Choi

IPC: H01L21/4763

CPC classification number: H01L21/76224 ,  H01L21/823481

Abstract: A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.

Abstract translation: 制造半导体器件的方法包括在下半导体衬底上形成下部器件，并在下部器件上形成层间绝缘膜。 在层间绝缘膜上形成上半导体衬底，使得层间绝缘膜位于下半导体衬底和上半导体衬底之间。 上沟槽形成在上半导体衬底内。 上部器件隔离膜形成在上部沟槽内。 用上述器件隔离膜中的杂质化学键的波长的紫外线照射上部器件隔离膜以降低其杂质浓度。

公开(公告)号：US20100319766A1

公开(公告)日：2010-12-23

申请号：US12614828

申请日：2009-11-09

Applicant: Dong-Chul SUH

Inventor： Dong-Chul SUH

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/02245 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: A solar cell includes; a semiconductor substrate including a first conductive type part selected from one of a p-type and n-type material and a second conductive type part selected from p-type and n-type material different from the first conductive type part, and a plurality of contact holes penetrating from a first surface to a second surface of the semiconductor substrate, a first electrode disposed on the first surface of the semiconductor substrate and electrically connected to the second conductive type part, a second electrode disposed on the second surface of the semiconductor substrate and electrically connected to the first conductive type part, and a dielectric layer disposed between the semiconductor substrate and the second electrode in the contact hole, and a method of manufacturing the solar cell.

Abstract translation: 太阳能电池包括： 包括从p型和n型材料中选择的第一导电型部件和从与第一导电型部件不同的p型和n型材料中选择的第二导电型部件的半导体基板，以及多个 从半导体衬底的第一表面延伸到第二表面的接触孔，设置在半导体衬底的第一表面上并电连接到第二导电类型部分的第一电极，设置在半导体衬底的第二表面上的第二电极 并且电连接到第一导电类型部分，以及设置在接触孔中的半导体衬底和第二电极之间的电介质层，以及制造太阳能电池的方法。

公开(公告)号：US07605022B2

公开(公告)日：2009-10-20

申请号：US11621513

申请日：2007-01-09

Applicant: Yong-Won Cha ,  Dong-Chul Suh ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dong-Chul Suh ,  Dae-Lok Bae

IPC: H01L23/34

CPC classification number: H01L23/34 ,  H01L21/76254 ,  H01L21/84

Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.

Abstract translation: 提供一种制造三维半导体器件的方法以及由此制造的三维半导体器件。 该方法包括形成导热塞以将热量从衬底上的器件引导出来，同时在堆叠的半导体层上进行高温处理。 在堆叠的半导体层上使用高温工艺而不会不利地影响衬底上的器件的能力允许形成高质量的单晶层叠半导体层。 然后可以使用高质量的单晶半导体层来制造改进的薄膜晶体管。

公开(公告)号：US20080206954A1

公开(公告)日：2008-08-28

申请号：US12038278

申请日：2008-02-27

Applicant: Jong-wan Choi ,  Eun-kyung Baek ,  Sang-hoon Ahn ,  Hong-gun Kim ,  Dong-chul Suh ,  Yong-soon Choi

Inventor： Jong-wan Choi ,  Eun-kyung Baek ,  Sang-hoon Ahn ,  Hong-gun Kim ,  Dong-chul Suh ,  Yong-soon Choi

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/823481

Abstract: A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.

Abstract translation: 制造半导体器件的方法包括在下半导体衬底上形成下部器件，并在下部器件上形成层间绝缘膜。 在层间绝缘膜上形成上半导体衬底，使得层间绝缘膜位于下半导体衬底和上半导体衬底之间。 上沟槽形成在上半导体衬底内。 上部器件隔离膜形成在上部沟槽内。 用上述器件隔离膜中的杂质化学键的波长的紫外线照射上部器件隔离膜以降低其杂质浓度。