公开(公告)号：US07605022B2

公开(公告)日：2009-10-20

申请号：US11621513

申请日：2007-01-09

Applicant: Yong-Won Cha ,  Dong-Chul Suh ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dong-Chul Suh ,  Dae-Lok Bae

IPC: H01L23/34

CPC classification number: H01L23/34 ,  H01L21/76254 ,  H01L21/84

Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.

Abstract translation: 提供一种制造三维半导体器件的方法以及由此制造的三维半导体器件。 该方法包括形成导热塞以将热量从衬底上的器件引导出来，同时在堆叠的半导体层上进行高温处理。 在堆叠的半导体层上使用高温工艺而不会不利地影响衬底上的器件的能力允许形成高质量的单晶层叠半导体层。 然后可以使用高质量的单晶半导体层来制造改进的薄膜晶体管。

公开(公告)号：US07781302B2

公开(公告)日：2010-08-24

申请号：US11703316

申请日：2007-02-07

Applicant: Yong-Won Cha ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dae-Lok Bae

IPC: H01L21/76

CPC classification number: H01L21/76243

Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.

Abstract translation: 制造半导体器件的方法包括在半导体衬底上形成掩模图案，并露出半导体衬底的限定区域。 使用掩模图案将氧离子注入到半导体衬底的限定区域中作为离子注入掩模。 半导体衬底的氧离子注入区域在足够高的范围内的一个或多个温度下退火，通过使注入的氧离子与氧离子注入区域中的硅反应，基本上遍及整个氧离子注入区域形成氧化硅，以及 其足够低以基本上防止邻近氧离子注入区域的半导体衬底的氧化。

公开(公告)号：US20070269957A1

公开(公告)日：2007-11-22

申请号：US11703316

申请日：2007-02-07

Applicant: Yong-Won Cha ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dae-Lok Bae

IPC: H01L21/76

CPC classification number: H01L21/76243

Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.

Abstract translation: 制造半导体器件的方法包括在半导体衬底上形成掩模图案，并露出半导体衬底的限定区域。 使用掩模图案将氧离子注入到半导体衬底的限定区域中作为离子注入掩模。 半导体衬底的氧离子注入区域在足够高的范围内的一个或多个温度下退火，通过使注入的氧离子与氧离子注入区域中的硅反应，基本上遍及氧离子注入区域形成氧化硅，以及 其足够低以基本上防止邻近氧离子注入区域的半导体衬底的氧化。

公开(公告)号：US20090221133A1

公开(公告)日：2009-09-03

申请号：US12370783

申请日：2009-02-13

Applicant: Seung-Woo Choi ,  Dae-Lok Bae ,  Jong-Wook Lee ,  Yong-Won Cha ,  Pil-Kyu Kang ,  Jung-Ho Kim

Inventor： Seung-Woo Choi ,  Dae-Lok Bae ,  Jong-Wook Lee ,  Yong-Won Cha ,  Pil-Kyu Kang ,  Jung-Ho Kim

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: Methods of fabricating SOI wafers are provided including providing a donor wafer and forming a hydrogen ion implantation layer in the donor wafer. A circumference portion of one side of the donor wafer is recessed to form a height difference. The one side of the donor wafer and a handle wafer are bonded to form a bonded wafer. The bonded wafer is heat treated to separate the bonded wafer along the hydrogen ion implantation layer.

Abstract translation: 提供制造SOI晶片的方法包括提供施主晶片并在施主晶片中形成氢离子注入层。 供体晶片的一侧的周边部分被凹入以形成高度差。 供体晶片和处理晶片的一侧被结合以形成接合晶片。 接合的晶片被热处理以沿着氢离子注入层分离键合的晶片。

公开(公告)号：US08999099B2

公开(公告)日：2015-04-07

申请号：US13577458

申请日：2010-11-26

Applicant: Yong-Won Cha ,  Sang Wook Yoo ,  Gun-Woo Park ,  Seung-Hee Jung

Inventor： Yong-Won Cha ,  Sang Wook Yoo ,  Gun-Woo Park ,  Seung-Hee Jung

IPC: B29C65/00 ,  B32B37/00 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/6776 ,  H01L21/67092 ,  H01L21/6719

Abstract: A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.

Abstract translation: 一种基板连接系统，包括用于接收对准的一对基板的便携式室; 提供了一种输送机输送装置，其连续地移动便携式室，并且提供连接到便携式室的真空端口以抽真空便携式室的内部的真空发生器。 以及用于进行加热处理的加热装置，其中对准的基板在便携式室中彼此附接，其中输送机输送装置布置成穿过加热装置。 衬底附着系统可以有助于高附着精度，并且由于室的尺寸减小，空间利用率可能高，并且由于通过使用输送机输送装置连续地执行附接过程，因此， 时间可能会减少。

公开(公告)号：US07470603B2

公开(公告)日：2008-12-30

申请号：US11701694

申请日：2007-02-02

Applicant: Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

Inventor： Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

IPC: H01L21/00

CPC classification number: H01L21/31144 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L29/66651

Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

公开(公告)号：US07056827B2

公开(公告)日：2006-06-06

申请号：US10917659

申请日：2004-08-13

Applicant: Yong-Won Cha ,  Kyu-tae Na

Inventor： Yong-Won Cha ,  Kyu-tae Na

IPC: H01L21/4763

CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

Abstract translation: 提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。 所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。 使用包括氮化氢气体（NF 3 N 3）的蚀刻气体蚀刻第一高密度等离子体层。 使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

公开(公告)号：US07560383B2

公开(公告)日：2009-07-14

申请号：US11398217

申请日：2006-04-05

Applicant: Kyong-Hee Joo ,  Yong-Won Cha ,  Seung-Hyun Lim ,  In-Seok Yeo ,  Kyu-Tae Na

Inventor： Kyong-Hee Joo ,  Yong-Won Cha ,  Seung-Hyun Lim ,  In-Seok Yeo ,  Kyu-Tae Na

IPC: H01L21/44

CPC classification number: C23C16/042 ,  C23C16/507 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02345 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31612 ,  H01L29/42332 ,  H01L29/7883

Abstract: In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.

Abstract translation: 在形成具有所需组成的薄层的方法中，将源气体第一次提供到装载在室中的基板上，并且源气体被化学吸附到基板上。 当提供源气体时，在室中产生等离子体第二次以将化学吸附的源气体改变成具有所需组成的薄层。 薄层可以具有化学计量组成或非化学计量组成。

公开(公告)号：US20080014726A1

公开(公告)日：2008-01-17

申请号：US11701694

申请日：2007-02-02

Applicant: Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

Inventor： Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

IPC: H01L21/00

CPC classification number: H01L21/31144 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L29/66651

Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

Abstract translation: 提供制造半导体器件的方法。 提供半导体衬底，其在至少其限定区域内包括单晶结构。 在半导体衬底上形成薄层。 图案化薄层以形成多个间隔开的场结构，并在其间具有单晶结构的半导体衬底的部分露出。 在具有单晶结构的半导体衬底的露出部分上形成非晶层。 非晶层被平坦化以暴露场结构的上表面并且从场结构之间的非晶层限定非结晶活性结构。 产生激光束，其加热非结晶活性结构以将其改变成具有与半导体衬底的限定区域基本上相同的单晶结构的单晶有源结构。

公开(公告)号：US20060246661A1

公开(公告)日：2006-11-02

申请号：US11398217

申请日：2006-04-05

Applicant: Kyong-Hee Joo ,  Yong-Won Cha ,  Seung-Hyun Lim ,  In-Seok Yeo ,  Kyu-Tae Na

Inventor： Kyong-Hee Joo ,  Yong-Won Cha ,  Seung-Hyun Lim ,  In-Seok Yeo ,  Kyu-Tae Na

IPC: H01L21/336

CPC classification number: C23C16/042 ,  C23C16/507 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02345 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31612 ,  H01L29/42332 ,  H01L29/7883

Abstract: In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.