Invention Grant
- Patent Title: Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same
- Patent Title (中): 形成薄层的方法和使用其制造非易失性半导体器件的方法
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Application No.: US11398217Application Date: 2006-04-05
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Publication No.: US07560383B2Publication Date: 2009-07-14
- Inventor: Kyong-Hee Joo , Yong-Won Cha , Seung-Hyun Lim , In-Seok Yeo , Kyu-Tae Na
- Applicant: Kyong-Hee Joo , Yong-Won Cha , Seung-Hyun Lim , In-Seok Yeo , Kyu-Tae Na
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2005-0029290 20050408
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.
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