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    MIS Device employing elemental pnictide or polyphosphide insulating layers
    1.
    发明授权
    MIS Device employing elemental pnictide or polyphosphide insulating layers 失效
    MIS器件采用元素pnictide或多磷化物绝缘层

    公开(公告)号：US4567503A

    公开(公告)日：1986-01-28

    申请号：US509210

    申请日：1983-06-29

    申请人： Diego Olego ,  David G. Brock ,  John A. Baumann ,  William E. Spicer

    发明人： Diego Olego ,  David G. Brock ,  John A. Baumann ,  William E. Spicer

    IPC分类号： H01L29/812 ,  H01L21/314 ,  H01L21/338 ,  H01L23/29 ,  H01L23/31 ,  H01L29/78 ,  H01L31/04 ,  H01L31/10 ,  H01L33/00 ,  H01L29/34 ,  H01L29/20 ,  H01L29/161

    CPC分类号： H01L23/291 ,  H01L21/314 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/3025

    摘要： Metal-insulator-semiconductor devices are formed on III-V semiconductors utilizing a pnictide rich insulating layer. The layer may be applied by vacuum evaporation, sputtering, chemical vapor deposition, and from a liquid melt. Gallium arsenide, indium phosphide, and gallium phosphide substrates are insulated with an alkali metal high pnictide polypnictide, preferably a polyphosphide, having the formula MP.sub.x where x is equal to or greater than 15, including new forms of phosphorus grown in the presence of an alkali metal where x is much greater than 15. A KP.sub.15 layer is preferred. They may also be insulated with a layer of a solid elemental pnictide, namely phosphorus, arsenic, antimony or bismuth applied by one of the above named processes. An elemental phosphorus layer is preferred. A silicon nitride, Si.sub.3 N.sub.4, layer may be added on top of the pnictide layer to increase the breakdown voltage of the insulating layer.

    摘要翻译： 金属绝缘体半导体器件利用富含pnictide的绝缘层在III-V半导体上形成。 该层可以通过真空蒸发，溅射，化学气相沉积和液体熔融来施加。 砷化镓，磷化铟和磷化镓衬底与碱金属高聚合物聚合物（优选多磷化物）绝缘，其具有式x x等于或大于15，包括在碱存在下生长的新形式的磷 金属，其中x远大于15.KP15层是优选的。 它们也可以用一层固体元素，即由上述任一方法之一施加的磷，砷，锑或铋来绝缘。 元素磷层是优选的。 氮化硅Si 3 N 4层可以添加到pnictide层的顶部以增加绝缘层的击穿电压。

    Method for forming evaporated pnictide and alkali metal polypnictide films
    2.
    发明授权
    Method for forming evaporated pnictide and alkali metal polypnictide films 失效
    用于形成蒸发的磷酸盐和碱金属聚合物膜的方法

    公开(公告)号：US4649024A

    公开(公告)日：1987-03-10

    申请号：US581139

    申请日：1984-02-17

    申请人： David G. Brock ,  John A. Baumann

    发明人： David G. Brock ,  John A. Baumann

    IPC分类号： C23C14/06 ,  C23C14/24 ,  H01L51/05 ,  B05D5/12

    CPC分类号： C23C14/06 ,  C23C14/24 ,  H01L51/0508 ,  H01L51/0512

    摘要： A method and apparatus are provided for producing fine quality pnictide films by vacuum evaporation and molecular beam deposition. A pnictide source, preferably phosphorous, is heated to produce a continuous supply of vapor species, preferably P.sub.4. The vapor species is cracked by a heated tungsten wire positioned adjacent the pnictide source to produce P.sub.2 molecules. A second tungsten wire cracker is located adjacent a substrate to prevent the recombination of P.sub.2 molecules into P.sub.4 molecules. The P.sub.2 molecules are deposited on the substrate and condense into amorphous pure phosphorous shiny red films. A separate source of alkali metal intercalate, preferably KC.sub.8, may also be heated to provide an alkali metal vapor for producing films of alkali metal polypnictide films, preferably KP.sub.x where x is equal to or greater than 15, to be deposited on the substrate. Fine quality films may also be deposited on a substrate by a molecular beam apparatus providing a continuous source of pnictide vapor species and a cracker disposed between the exit of a pnictide collimator and the substrate.

    摘要翻译： 提供了一种用于通过真空蒸发和分子束沉积来生产精细质量的膜的方法和装置。 加热源，优选磷，以产生蒸气物质的连续供应，优选P4。 蒸汽物质通过与邻近源相邻的加热的钨丝开裂，产生P2分子。 第二钨丝裂纹器位于基底附近以防止P2分子复合成P4分子。 将P2分子沉积在基底上并冷凝成无定形纯磷光泽红膜。 也可以加热单独的碱金属插层源，优选KC8，以提供碱金属蒸汽，用于制备沉积在基底上的碱金属聚合物膜，优选KPx（其中x等于或大于15）的薄膜。 也可以通过分子束装置将优质膜沉积在基底上，分子束装置提供连续的气相物质源和设置在射线准直仪的出口与基底之间的裂纹器。