Method of cutting a wafer
    3.
    发明授权
    Method of cutting a wafer 有权
    切割晶片的方法

    公开(公告)号:US07863161B2

    公开(公告)日:2011-01-04

    申请号:US12138646

    申请日:2008-06-13

    IPC分类号: H01L21/00

    CPC分类号: H01L21/78

    摘要: In a method of cutting a wafer, a supporting member is attached to an upper surface of the wafer on which semiconductor chips are formed. An opening is formed at a lower surface of the wafer along a scribe lane of the wafer. The lower surface of the wafer may be plasma-etched to reduce a thickness of the wafer. A tensile tape may be attached to the lower surface of the wafer. Here, the tensile tape includes sequentially stacked tensile films having different tensile modules. The supporting member is then removed. The tensile tape is cooled to increase the tensile modules between the tensile films. The tensile tape is tensed until the tensile films are cut using the tensile modules difference to separate the tensile tape from the semiconductor chips. Thus, the lower surface of the wafer may be plasma-etched without using an etching mask.

    摘要翻译: 在切割晶片的方法中,支撑构件附接到其上形成有半导体芯片的晶片的上表面。 在晶片的下表面沿着晶片的划线通道形成开口。 可以等离子体蚀刻晶片的下表面以减小晶片的厚度。 拉伸带可以附接到晶片的下表面。 这里,拉伸带包括具有不同拉伸模块的顺序堆叠的拉伸膜。 然后移除支撑构件。 拉伸带被冷却以增加拉伸膜之间的拉伸模块。 将拉伸带拉紧直到使用拉伸模块差来切割拉伸膜,以将拉伸带与半导体芯片分离。 因此,可以不使用蚀刻掩模来等离子体蚀刻晶片的下表面。

    METHOD OF CUTTING A WAFER
    4.
    发明申请
    METHOD OF CUTTING A WAFER 有权
    切割方法

    公开(公告)号:US20080311727A1

    公开(公告)日:2008-12-18

    申请号:US12138646

    申请日:2008-06-13

    IPC分类号: H01L21/302

    CPC分类号: H01L21/78

    摘要: In a method of cutting a wafer, a supporting member is attached to an upper surface of the wafer on which semiconductor chips are formed. An opening is formed at a lower surface of the wafer along a scribe lane of the wafer. The lower surface of the wafer may be plasma-etched to reduce a thickness of the wafer. A tensile tape may be attached to the lower surface of the wafer. Here, the tensile tape includes sequentially stacked tensile films having different tensile modules. The supporting member is then removed. The tensile tape is cooled to increase the tensile modules between the tensile films. The tensile tape is tensed until the tensile films are cut using the tensile modules difference to separate the tensile tape from the semiconductor chips. Thus, the lower surface of the wafer may be plasma-etched without using an etching mask.

    摘要翻译: 在切割晶片的方法中,支撑构件附接到其上形成有半导体芯片的晶片的上表面。 在晶片的下表面沿着晶片的划线通道形成开口。 可以等离子体蚀刻晶片的下表面以减小晶片的厚度。 拉伸带可以附接到晶片的下表面。 这里,拉伸带包括具有不同拉伸模块的顺序堆叠的拉伸膜。 然后移除支撑构件。 拉伸带被冷却以增加拉伸膜之间的拉伸模块。 将拉伸带拉紧直到使用拉伸模块差来切割拉伸膜,以将拉伸带与半导体芯片分离。 因此,可以不使用蚀刻掩模来等离子体蚀刻晶片的下表面。

    Apparatus and method for separating a semiconductor chip
    5.
    发明申请
    Apparatus and method for separating a semiconductor chip 审中-公开
    用于分离半导体芯片的装置和方法

    公开(公告)号:US20070193920A1

    公开(公告)日:2007-08-23

    申请号:US11709853

    申请日:2007-02-23

    IPC分类号: B65D85/00

    CPC分类号: H01L21/67132 H01L21/67092

    摘要: Example embodiments may provide an apparatus for and method of separating a semiconductor chip. In the example embodiments, a separating plate having an end insertable between a base tape and an adhesive film may move back and forth in a direction perpendicular to an edge of the semiconductor chip so as to separate the semiconductor chip. Example embodiments may allow fragile, thin semiconductor chips to be safely packaged without damage and thus may increase semiconductor chip yield.

    摘要翻译: 示例性实施例可以提供用于分离半导体芯片的装置和方法。 在示例实施例中,具有可插入基带和粘合剂膜之间的端部的分离板可以在垂直于半导体芯片的边缘的方向上来回移动,以便分离半导体芯片。 示例性实施例可以允许脆弱的薄半导体芯片安全地封装而不损坏,因此可以提高半导体芯片的产量。

    Method of fabricating wafer chips
    9.
    发明申请
    Method of fabricating wafer chips 审中-公开
    制造晶圆片的方法

    公开(公告)号:US20070057410A1

    公开(公告)日:2007-03-15

    申请号:US11500345

    申请日:2006-08-08

    IPC分类号: H05B6/00

    CPC分类号: H01L21/67132

    摘要: Example embodiments of the present invention relate to a method of packaging a semiconductor device. Other example embodiments of the present invention relate to a method of fabricating wafer chips for packaging a semiconductor device. Provided is a method of fabricating a wafer chips, which can perform a reliable pick-up process by removing the adhesive component adhering onto the cutting surfaces of the wafer chips, the diced DAF and the first base film. The method includes preparing at least one wafer, attaching at least one film onto a back surface of the wafer to support the wafer, forming wafer chips by dicing the wafer, detaching the at least one film from the wafer chips and attaching at least one base film onto the wafer chips to support the wafer chips.

    摘要翻译: 本发明的示例性实施例涉及一种封装半导体器件的方法。 本发明的其它示例性实施例涉及制造用于封装半导体器件的晶片芯片的方法。 提供一种制造晶片芯片的方法,其可以通过去除附着在晶片芯片,切割的DAF和第一基底膜的切割表面上的粘合剂成分来执行可靠的拾取过程。 该方法包括制备至少一个晶片,将至少一个膜附着到晶片的背面上以支撑晶片,通过切割晶片形成晶片芯片,将晶片芯片中的至少一个薄膜分开并将至少一个基底 胶片到晶片芯片上以支撑晶片芯片。