公开(公告)号：US5688295A

公开(公告)日：1997-11-18

申请号：US646659

申请日：1996-05-08

Applicant: Chung-Hsien Yang

Inventor： Chung-Hsien Yang

IPC: C10L1/02 ,  C10L1/14 ,  C10L1/16 ,  C10L1/18 ,  C10L1/28 ,  C10L10/00 ,  C10L10/02

CPC classification number: C10L1/14 ,  C10L1/023 ,  C10L1/026 ,  C10L1/143 ,  C10L10/02 ,  C10L1/1608 ,  C10L1/1616 ,  C10L1/1824 ,  C10L1/1852 ,  C10L1/1857 ,  C10L1/28 ,  C10L1/285

Abstract: A compound for use as an additive to gasoline or as a fuel is provided. The compound has the molecular formula: ##STR1## is provided where R is CH.sub.3, C.sub.3 H.sub.6, C.sub.7 H.sub.8, C.sub.6 H.sub.10, or C.sub.10 H.sub.18 ; R.sub.1 is a carbonyl group (C.dbd.O), R.sub.2 is H or --OH (hydroxyl), and R.sub.3 is an aliphatic compound or a silicon compound. The product is formed through pressure reaction to generate energy chain and change the original molecular structure to form a closed chain. Due to the reaction mechanism, a mixture is provided which is approximately 40.about.70% alcohol, approximately 2.5.about.18% ketone and ethers, and approximately 4.about.20% aliphatic and silicon compounds. It has 2 to 10 carbon atoms and 3 to 18 hydrogen and 3 to 16 oxygen atoms. The mixture is added to gasoline to provide a fuel mixture. The fuel mixture contains up to 70% by volume of the additive mixture. When added to gasoline, the compound of the invention increases motor power and reduces pollutants put out by the motor.

Abstract translation: 提供了用作汽油或燃料添加剂的化合物。 该化合物具有分子式：其中R是CH 3，C 3 H 6，C 7 H 8，C 6 H 10或C 10 H 18; R1为羰基（C = O），R2为H或-OH（羟基），R3为脂肪族化合物或硅化合物。 产物通过压力反应形成，产生能量链，改变原有的分子结构形成闭合链。 由于反应机理，提供了一种混合物，其为约40％的70％醇，约2.5％的18％酮和醚，以及约4％的20％脂族和硅化合物。 它具有2至10个碳原子和3至18个氢和3至16个氧原子。 将混合物加入到汽油中以提供燃料混合物。 燃料混合物含有高达70体积％的添加剂混合物。 当添加到汽油中时，本发明的化合物增加电机功率并减少由电动机排出的污染物。

公开(公告)号：US06433420B1

公开(公告)日：2002-08-13

申请号：US09909293

申请日：2001-07-19

Applicant: Chung Hsien Yang ,  Yu Ting Lai

Inventor： Chung Hsien Yang ,  Yu Ting Lai

IPC: H01L2334

CPC classification number: H01L21/565 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00015

Abstract: A BGA semiconductor package having an embedded heat sink is proposed. The heat sink mounted on a substrate includes a flat portion and supporting members for supporting the flat portion to be positioned above a semiconductor chip. The flat portion is formed with at least one taper air vent for ventilating air in a gap between the flat portion and the chip during a molding process. This further helps prevent voids from forming in an encapsulant due to the air trapped in a molding resin as being flowing slowly through the gap, and avoid the occurrence of a popcorn effect on the encapsulant during a temperature cycle in subsequent processes. As a result, quality and yield for the packaged products can be significantly improved.

Abstract translation: 提出了具有嵌入式散热器的BGA半导体封装。 安装在基板上的散热器包括平坦部分和用于支撑待位于半导体芯片上方的平坦部分的支撑部件。 平坦部分形成有至少一个锥形空气排气口，用于在模制过程中在平坦部分和芯片之间的间隙中通风空气。 这进一步有助于防止由于在模制树脂中捕获的空气缓慢地流过间隙而在密封剂中形成空隙，并且避免在后续工艺中的温度循环期间对密封剂产生爆米花效应。 因此，可以显着提高包装产品的质量和产量。

公开(公告)号：US20100132736A1

公开(公告)日：2010-06-03

申请号：US12626734

申请日：2009-11-27

Applicant: Yih-Min LIN ,  Chung-Hsien Yang ,  Alan E. Humphrey ,  Jerry J. Broz

Inventor： Yih-Min LIN ,  Chung-Hsien Yang ,  Alan E. Humphrey ,  Jerry J. Broz

IPC: B08B7/00

CPC classification number: B08B7/0028 ,  G01R3/00

Abstract: A test cell conditioner (TCC) surrogate cleaning device for cleaning the pin elements in a socket or electrical interface receptacle of a load board includes a main testing frame, a plurality of trays, testing chip receptacles and one or more pick up devices. Chips to be tested (electronic elements) are entrained on a tray, and a plurality of adhesive cleaning chips are entrained on another tray. The adhesive cleaning chip contains a solid layer and an adhesive layer, and an abrasive material is mingled in the adhesive layer. The pick up device removes the adhesive cleaning chip to a position above the testing chip receptacle and cleans up the oxides and other foreign materials sticking on the receptacle by absorption or abrasion. Interrupting the operation of the apparatus to clean the test probe by etching can be excluded so as to improve the working efficiency.

Abstract translation: 用于清洁负载板的插座或电接口插座中的引脚元件的测试电池调节器（TCC）替代清洁装置包括主测试框架，多个托盘，测试芯片插座和一个或多个拾取装置。 要测试的芯片（电子元件）被夹带在托盘上，并且多个粘合剂清洁芯片被夹带在另一个托盘上。 粘合剂清洁芯片包含固体层和粘合剂层，并且研磨材料混合在粘合剂层中。 拾取装置将粘合剂清洁芯片移除到测试芯片插座上方的位置，并通过吸收或磨损清除粘附在容器上的氧化物和其它异物。 为了提高工作效率，可以排除通过蚀刻对设备的操作进行中断以清洁测试探针。

公开(公告)号：US06877385B2

公开(公告)日：2005-04-12

申请号：US10085256

申请日：2001-10-22

Applicant: Yean-Kuen Fang ,  Ming-Shanng Ju ,  Jyh-Jier Ho ,  Gin-Shin Chen ,  Ming-Chun Hsieh ,  Shyh-Fann Ting ,  Chung-Hsien Yang

Inventor： Yean-Kuen Fang ,  Ming-Shanng Ju ,  Jyh-Jier Ho ,  Gin-Shin Chen ,  Ming-Chun Hsieh ,  Shyh-Fann Ting ,  Chung-Hsien Yang

IPC: A61B5/103 ,  B81B3/00 ,  G01L1/18 ,  G01B7/16

CPC classification number: A61B5/103 ,  A61B2562/028 ,  A61B2562/12 ,  G01L1/18

Abstract: There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.

Abstract translation: 公开了一种半导体传感器，用于测量膝盖（AK）假体的插座与截肢者残肢的软组织之间的接触剪切应力分布。 传感器采用微机电系统（MEMS）技术制造，其主感测部件采用2-X形法兰结构。 传感器通过在KOH溶液中的体硅的各向异性湿法蚀刻制备，并且通过沉积的SiO 2薄膜的表面微加工形成感测膜上方的方形凸缘。 本发明具有以下特征：单片硅的压阻电阻将用于将传感器的剪切变形转换为电信号，并且可以测量作用在感测凸缘上的剪切力矢量的微传感器。

公开(公告)号：US5931977A

公开(公告)日：1999-08-03

申请号：US971411

申请日：1997-11-17

Applicant: Chung-Hsien Yang

Inventor： Chung-Hsien Yang

IPC: C10L1/02 ,  C10L1/14 ,  C10L1/16 ,  C10L1/18 ,  C10L1/28 ,  C10L10/00 ,  C10L10/02

CPC classification number: C10L1/023 ,  C10L1/026 ,  C10L1/14 ,  C10L1/143 ,  C10L10/02 ,  C10L1/1608 ,  C10L1/1616 ,  C10L1/1824 ,  C10L1/1852 ,  C10L1/1857 ,  C10L1/28 ,  C10L1/285

Abstract: A compound for use as a diesel fuel additive to gasoline or as a diesel fuel is provided. The compound has the molecular formula: ##STR1## is provided where R is CH.sub.3, C.sub.6 H.sub.10, C.sub.10 H.sub.18, or C.sub.12 H.sub.25. R.sub.1 is a carbonyl group (C.dbd.O), R.sub.2 is HR--OH (hydroxyl). R.sub.1 is a carbonyl group (C.dbd.O), R.sub.2 is HR--OH (hydroxyl). An R.sub.3 is a silicone compound. The product is formed through pressure reaction to generate energy and change the original molecular structure to form a closed chain. Due to the reaction mechanism, a mixture is provided which is approximately 30%-55% alcohol, approximately 25%-35% ketones, and approximately 3%-10% silicon compounds. It has 3-5 carbon atoms and 9-18 hydrogen and 3-5 oxygen atoms.The mixture is added to gasoline to provide a diesel fuel mixture. The fuel mixture contains up to 10%-30% by volume of the additive mixture. When added to gasoline, the compound of the invention increases motor power and reduces pollutants put out by the motor.

Abstract translation: 提供了用作汽油柴油燃料添加剂或柴油燃料的化合物。 该化合物具有分子式：其中R是CH 3，C 6 H 10，C 10 H 18或C 12 H 25。 R1是羰基（C = O），R2是HR-OH（羟基）。 R1是羰基（C = O），R2是HR-OH（羟基）。 R3是硅氧烷化合物。 该产物通过压力反应形成以产生能量并改变原来的分子结构以形成闭合链。 由于反应机理，提供了约30％-55％的醇，约25％-35％的酮和约3％-10％的硅化合物的混合物。 它有3-5个碳原子和9-18个氢原子和3-5个氧原子。 将混合物加入到汽油中以提供柴油混合物。 燃料混合物含有高达10％-30％（体积）的添加剂混合物。 当添加到汽油中时，本发明的化合物增加电机功率并减少由电动机排出的污染物。

公开(公告)号：US20060281228A1

公开(公告)日：2006-12-14

申请号：US11439250

申请日：2006-05-24

Applicant: Chien-Tang Li ,  Chung-Hsien Yang ,  M. Lin

Inventor： Chien-Tang Li ,  Chung-Hsien Yang ,  M. Lin

IPC: H01L21/00 ,  H01L23/02

CPC classification number: H01L23/49575 ,  H01L23/4951 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A lead-frame type semiconductor package is provided, including: a lead frame having a plurality of long leads and short leads, wherein a chip-attaching area is defined on the plurality of long leads, and at least a portion of each of the long leads within the chip-attaching area is formed with a recess; a chip mounted on the chip-attaching area and covering the recesses; a plurality of bonding wires for electrically connecting the chip to the corresponding long leads and short leads around the chip; and an encapsulant for encapsulating the chip, the plurality of bonding wires, a portion of the long leads and a portion of the short leads, wherein the encapsulant is filled into the recesses and gaps between the long leads, so as to solve a problem of incomplete filling in a conventional package.

Abstract translation: 提供一种引线框架型半导体封装，包括：具有多条长引线和短引线的引线框架，其中，在所述多根长引线上限定芯片附着区域，并且每个长引线的至少一部分 芯片安装区域内的引线形成有凹部; 安装在芯片安装区域上并覆盖凹部的芯片; 多个用于将芯片电连接到芯片周围的相应长引线和短引线的接合线; 以及用于封装芯片的密封剂，多个接合线，长引线的一部分和短引线的一部分，其中密封剂填充到长引线之间的凹部和间隙中，以解决问题 不完全填充常规包装。

公开(公告)号：US06987311B2

公开(公告)日：2006-01-17

申请号：US10250017

申请日：2003-05-28

Applicant: Chung-Hsien Yang ,  Rung-Nan Lu

Inventor： Chung-Hsien Yang ,  Rung-Nan Lu

IPC: H01L23/552

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

Abstract: A method for fabricating thin film transistors (TFT) of a TFT-LCD. The method first forms a gate electrode of the TFT in a transistor area of a substrate. Then a first dielectric layer, a light shielding layer, a second dielectric layer, a semiconductor layer, a doped silicon conductive layer and a second metal layer are sequentially formed on the gate electrode so as to form the TFT in the transistor area. A channel area is defined in the TFT for separating the second metal layer and the doped silicon conductive layer so as to respectively form a source electrode and a drain electrode of the TFT. Finally, a passivation layer and a transparent conductive layer are sequentially formed on the drain electrode, and the transparent conductive layer is connected with the drain electrode through a first via hole of the passivation layer.

Abstract translation: 一种用于制造TFT-LCD的薄膜晶体管（TFT）的方法。 该方法首先在衬底的晶体管区域中形成TFT的栅电极。 然后在栅电极上依次形成第一电介质层，遮光层，第二电介质层，半导体层，掺杂硅导电层和第二金属层，以在晶体管区域中形成TFT。 在TFT中限定了用于分离第二金属层和掺杂硅导电层的沟道区，以分别形成TFT的源电极和漏电极。 最后，在漏电极上依次形成钝化层和透明导电层，透明导电层通过钝化层的第一通孔与漏电极连接。