Invention Grant
- Patent Title: Contact type micro piezoresistive shear-stress sensor
- Patent Title (中): 接触式微压阻剪切应力传感器
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Application No.: US10085256Application Date: 2001-10-22
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Publication No.: US06877385B2Publication Date: 2005-04-12
- Inventor: Yean-Kuen Fang , Ming-Shanng Ju , Jyh-Jier Ho , Gin-Shin Chen , Ming-Chun Hsieh , Shyh-Fann Ting , Chung-Hsien Yang
- Applicant: Yean-Kuen Fang , Ming-Shanng Ju , Jyh-Jier Ho , Gin-Shin Chen , Ming-Chun Hsieh , Shyh-Fann Ting , Chung-Hsien Yang
- Applicant Address: TW Taipei
- Assignee: National Science Council
- Current Assignee: National Science Council
- Current Assignee Address: TW Taipei
- Agency: Bucknam & Archer
- Priority: TW89124498A 20001116
- Main IPC: A61B5/103
- IPC: A61B5/103 ; B81B3/00 ; G01L1/18 ; G01B7/16

Abstract:
There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.
Public/Granted literature
- US20020174727A1 Contact type micro piezoresistive shear-stress sensor Public/Granted day:2002-11-28
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