公开(公告)号：US06877385B2

公开(公告)日：2005-04-12

申请号：US10085256

申请日：2001-10-22

Applicant: Yean-Kuen Fang ,  Ming-Shanng Ju ,  Jyh-Jier Ho ,  Gin-Shin Chen ,  Ming-Chun Hsieh ,  Shyh-Fann Ting ,  Chung-Hsien Yang

Inventor： Yean-Kuen Fang ,  Ming-Shanng Ju ,  Jyh-Jier Ho ,  Gin-Shin Chen ,  Ming-Chun Hsieh ,  Shyh-Fann Ting ,  Chung-Hsien Yang

IPC: A61B5/103 ,  B81B3/00 ,  G01L1/18 ,  G01B7/16

CPC classification number: A61B5/103 ,  A61B2562/028 ,  A61B2562/12 ,  G01L1/18

Abstract: There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.

Abstract translation: 公开了一种半导体传感器，用于测量膝盖（AK）假体的插座与截肢者残肢的软组织之间的接触剪切应力分布。 传感器采用微机电系统（MEMS）技术制造，其主感测部件采用2-X形法兰结构。 传感器通过在KOH溶液中的体硅的各向异性湿法蚀刻制备，并且通过沉积的SiO 2薄膜的表面微加工形成感测膜上方的方形凸缘。 本发明具有以下特征：单片硅的压阻电阻将用于将传感器的剪切变形转换为电信号，并且可以测量作用在感测凸缘上的剪切力矢量的微传感器。

公开(公告)号：US20050101218A1

公开(公告)日：2005-05-12

申请号：US10720058

申请日：2003-11-25

Applicant: Yean-Kuen Fang ,  William Lee ,  Jyh-Jier Ho ,  Shyh-Fann Ting ,  Shih-Fang Chen ,  Hsin-Che Chiang

Inventor： Yean-Kuen Fang ,  William Lee ,  Jyh-Jier Ho ,  Shyh-Fann Ting ,  Shih-Fang Chen ,  Hsin-Che Chiang

IPC: H05B33/10 ,  H01J9/00 ,  H01L51/00 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/14 ,  H05B33/22 ,  H05B33/26

CPC classification number: H01L51/002 ,  H01L51/0002 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5048 ,  H01L51/56 ,  H01L2251/308

Abstract: A method for manufacturing organic light-emitting diodes (OLEDs) is disclosed, by adding nitrogen (N2) into the material of a hole transport layer (HTL) and evaporating the nitrogen and the material of the hole transport layer while growing the hole transport layer, so as to dope nitrogen molecules into the hole transport layer. In the hole transport layer, the nitrogen molecules are impurities of higher energy level, and are used to catch holes while the holes transports and trap the holes in the hole transport layer, thereby obtaining an object of improving the luminance efficiency of the organic light-emitting diodes with lower cost.

Abstract translation: 公开了一种用于制造有机发光二极管（OLED）的方法，通过向空穴传输层（HTL）的材料中加入氮气（N 2/2）并蒸发氮气和孔的材料 传输层，同时生长空穴传输层，以便将氮分子掺入空穴传输层。 在空穴传输层中，氮分子是高能量的杂质，并且用于在空穴传输并捕获空穴传输层中的空穴的同时捕获孔，从而获得提高有机发光层的发光效率的目的， 发光二极管成本较低。

公开(公告)号：US6046066A

公开(公告)日：2000-04-04

申请号：US37819

申请日：1998-03-10

Applicant: Yean-Kuen Fang ,  Jyh-Jier Ho ,  Chiun-Wei Chu

Inventor： Yean-Kuen Fang ,  Jyh-Jier Ho ,  Chiun-Wei Chu

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/306

CPC classification number: B81C1/0038 ,  B81B2203/0118 ,  B81C2201/053 ,  Y10S438/943

Abstract: The present invention relates to a new process of the cantilever structure in the micro-electro-mechanical system (MEMS), and more particularly, to a process that could overcome the contamination problem on the undesired areas during the thin-film growth. Their advantages include not only to substitute the complex technique with sacrificial layer, but also to increase the yield for its simple structure and to deal the sub-micron microelectromechanical system technology for the mature stage on the wet-etching skill.

Abstract translation: 本发明涉及微机电系统（MEMS）中的悬臂结构的新工艺，更具体地说，涉及可以克服薄膜生长过程中不期望的区域的污染问题的方法。 它们的优点不仅在于牺牲层替代复杂技术，而且还可以提高其简单结构的产量，并将成熟阶段的亚微米微机电系统技术应用于湿蚀刻技术。

公开(公告)号：US07048603B2

公开(公告)日：2006-05-23

申请号：US10720058

申请日：2003-11-25

Applicant: Yean-Kuen Fang ,  William Lee ,  Jyh-Jier Ho ,  Shyh-Fann Ting ,  Shih-Fang Chen ,  Hsin-Che Chiang

Inventor： Yean-Kuen Fang ,  William Lee ,  Jyh-Jier Ho ,  Shyh-Fann Ting ,  Shih-Fang Chen ,  Hsin-Che Chiang

IPC: H01J9/22 ,  H01J1/62

CPC classification number: H01L51/002 ,  H01L51/0002 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5048 ,  H01L51/56 ,  H01L2251/308

Abstract: A method for manufacturing organic light-emitting diodes (OLEDs) is disclosed, by adding nitrogen (N2) into the material of a hole transport layer (HTL) and evaporating the nitrogen and the material of the hole transport layer while growing the hole transport layer, so as to dope nitrogen molecules into the hole transport layer. In the hole transport layer, the nitrogen molecules are impurities of higher energy level, and are used to catch holes while the holes transports and trap the holes in the hole transport layer, thereby obtaining an object of improving the luminance efficiency of the organic light-emitting diodes with lower cost.

Abstract translation: 公开了一种用于制造有机发光二极管（OLED）的方法，通过向空穴传输层（HTL）的材料中加入氮气（N 2/2）并蒸发氮气和孔的材料 传输层，同时生长空穴传输层，以便将氮分子掺入空穴传输层。 在空穴传输层中，氮分子是高能量的杂质，并且用于在空穴传输并捕获空穴传输层中的空穴的同时捕获孔，从而获得提高有机发光层的发光效率的目的， 发光二极管成本较低。