公开(公告)号：US08969713B2

公开(公告)日：2015-03-03

申请号：US13359606

申请日：2012-01-27

Applicant: Min-Seok Oh ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

Inventor： Min-Seok Oh ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/078 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/072 ,  H01L31/0368

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract translation: 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上 第一非单晶半导体层。

公开(公告)号：US08679920B2

公开(公告)日：2014-03-25

申请号：US13273935

申请日：2011-10-14

Applicant: Hauk Han ,  Byoung-Kyu Lee ,  Jingi Hong ,  Changwon Lee ,  Eungjoon Lee ,  Je-Hyeon Park ,  Jeonggil Lee

Inventor： Hauk Han ,  Byoung-Kyu Lee ,  Jingi Hong ,  Changwon Lee ,  Eungjoon Lee ,  Je-Hyeon Park ,  Jeonggil Lee

IPC: H01L21/336

CPC classification number: H01L29/7827 ,  H01L27/11582 ,  H01L29/66666 ,  H01L29/7926

Abstract: Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.

Abstract translation: 制造半导体器件的半导体器件和方法，其可以包括形成绝缘结构，所述绝缘结构包括彼此依次层叠并垂直分离的绝缘图案，以在绝缘图案之间提供间隙区域，形成填充间隙区域并覆盖两个相对的间隔区域的第一导电层 并且形成覆盖第一导电层的第二导电层。 覆盖绝缘结构的上侧壁的第二导电层的厚度大于覆盖绝缘结构的下侧壁的第二导电层的厚度。

公开(公告)号：US20100159633A1

公开(公告)日：2010-06-24

申请号：US12642527

申请日：2009-12-18

Applicant: Byoung-Kyu LEE ,  Se-Jin Chung ,  Byoung-June Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Min-Seok Oh ,  Ku-Hyun Kang ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Min Park ,  Mi-Hwa Lim ,  Joon-Young Seo

Inventor： Byoung-Kyu LEE ,  Se-Jin Chung ,  Byoung-June Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Min-Seok Oh ,  Ku-Hyun Kang ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Min Park ,  Mi-Hwa Lim ,  Joon-Young Seo

IPC: H01L21/326 ,  H01L31/02

CPC classification number: H01L21/324 ,  H01L21/02667 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/075 ,  H01L31/1872 ,  Y02E10/548 ,  Y02P70/521

Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Abstract translation: 提供了使用焦耳加热诱导结晶法制造光伏器件的方法。 该方法包括：在衬底上形成第一导电图案; 在具有第一导电图案的基板上形成光电转换层; 以及通过向所述光电转换层施加电场而使所述光电转换层的至少一部分结晶，其中所述光电转换层包括含有第一杂质的第一非晶半导体层，第二本征非晶半导体层和第三非晶半导体层 含有第二杂质。

公开(公告)号：US20100154869A1

公开(公告)日：2010-06-24

申请号：US12476645

申请日：2009-06-02

Applicant: Min-Seok Oh ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

Inventor： Min-Seok Oh ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/00

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract translation: 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上 第一非单晶半导体层。

公开(公告)号：US20100001359A1

公开(公告)日：2010-01-07

申请号：US12413979

申请日：2009-03-30

Applicant: Seung-Jae JUNG ,  Yuk-Hyun NAM ,  Czang-Ho LEE ,  Myung-Hun SHIN ,  Min-Seok OH ,  Byoung-Kyu LEE ,  Mi-Hwa LIM ,  Joon-Young SEO

Inventor： Seung-Jae JUNG ,  Yuk-Hyun NAM ,  Czang-Ho LEE ,  Myung-Hun SHIN ,  Min-Seok OH ,  Byoung-Kyu LEE ,  Mi-Hwa LIM ,  Joon-Young SEO

IPC: H01L31/0224 ,  H01L23/532 ,  H01L21/28

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Abstract translation: 透明导电层包括衬底，设置在衬底上的第一导电层和设置在第一导电层上的第二导电层，其中第二导电层包括纹理表面和暴露第一导电层的开口，其中， 开口包括约1微米至约3微米的直径。 还公开了制造透明导电层和光电器件的方法。

公开(公告)号：US08802972B2

公开(公告)日：2014-08-12

申请号：US12476645

申请日：2009-06-02

Applicant: Min-Seok Oh ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

Inventor： Min-Seok Oh ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/078

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract translation: 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上 第一非单晶半导体层。

公开(公告)号：US20130045564A1

公开(公告)日：2013-02-21

申请号：US13655511

申请日：2012-10-19

Applicant: Min PARK ,  Min-Seok OH ,  Jung-Tae KIM ,  Czang-Ho LEE ,  Myung-Hun SHIN ,  Byoung-Kyu LEE ,  Ku-Hyun KANG ,  Yuk-Hyun NAM ,  Seung-Jae JUNG ,  Mi-Hwa LIM ,  Joon-Young SEO

Inventor： Min PARK ,  Min-Seok OH ,  Jung-Tae KIM ,  Czang-Ho LEE ,  Myung-Hun SHIN ,  Byoung-Kyu LEE ,  Ku-Hyun KANG ,  Yuk-Hyun NAM ,  Seung-Jae JUNG ,  Mi-Hwa LIM ,  Joon-Young SEO

IPC: H01L31/02

CPC classification number: H01L31/075 ,  H01L31/022441 ,  H01L31/046 ,  Y02E10/548

Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.

Abstract translation: 提供了一种光电器件及其制造方法。 光电器件包括：基板; 形成在所述基板上的第一导电层; 在第一导电层上沿着第一方向交替形成P层和N层; I层覆盖第一导电层上的P层和N层，其中P层和N层彼此分开第一间隔，I层形成在P层与N层之间 分离第一间隔，并且沿着第一方向形成的P层，I层和N层形成单位电池。

公开(公告)号：US08354585B2

公开(公告)日：2013-01-15

申请号：US12582037

申请日：2009-10-20

Applicant: Min-Seok Oh ,  Byoung-Kyu Lee ,  Min Park ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo

Inventor： Min-Seok Oh ,  Byoung-Kyu Lee ,  Min Park ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/547

Abstract: A solar cell includes: a semiconductor substrate having a first surface and a second surface opposite the first surface; uneven patterns disposed on at least one of the first surface and the second surface of the semiconductor substrate; a first impurity layer disposed on the uneven patterns and which includes a first part having a first doping concentration and a second part having a second doping concentration greater than the first doping concentration; and a first electrode which contacts the second part of the first impurity layer and does not contact the first part of the first impurity layer.

Abstract translation: 太阳能电池包括：具有第一表面和与第一表面相对的第二表面的半导体衬底; 设置在半导体衬底的第一表面和第二表面中的至少一个上的不均匀图案; 设置在所述凹凸图案上的第一杂质层，其包括具有第一掺杂浓度的第一部分和具有大于所述第一掺杂浓度的第二掺杂浓度的第二部分; 以及与第一杂质层的第二部分接触并且不接触第一杂质层的第一部分的第一电极。

公开(公告)号：US20120129295A1

公开(公告)日：2012-05-24

申请号：US13359606

申请日：2012-01-27

Applicant: Min-Seok OH ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

Inventor： Min-Seok OH ,  Jung-Tae Kim ,  Nam-Kyu Song ,  Min Park ,  Yun-Seok Lee ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo ,  Dong-Uk Choi ,  Dong-Seop Kim ,  Byoung-June Kim

IPC: H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract translation: 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上 第一非单晶半导体层。

公开(公告)号：US07972883B2

公开(公告)日：2011-07-05

申请号：US12400674

申请日：2009-03-09

Applicant: Seung-Jae Jung ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Joon-Young Seo ,  Dong-Uk Choi ,  Byoung-Kyu Lee

Inventor： Seung-Jae Jung ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Joon-Young Seo ,  Dong-Uk Choi ,  Byoung-Kyu Lee

IPC: H01L21/00

CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/1888 ,  Y02E10/50 ,  Y10S438/964

Abstract: In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

Abstract translation: 在制造光电器件的方法中，在衬底上形成透明导电层，并且使用包括氢氟酸的蚀刻溶液部分蚀刻透明导电层。 因此，形成在其表面具有凹凸图案的透明电极。 当透明导电层被部分蚀刻时，可以通过调节透明导电层的蚀刻时间来控制透明电极的雾度。 此外，由于将蚀刻溶液喷射到透明导电层以蚀刻透明导电层，所以即使基板的尺寸增加，也可以容易地形成透明电极表面上的凹凸图案。