摘要:
An apparatus comprising a reference generation circuit and a modulator. The reference generation circuit, may be configured to generate a first one or more reference voltages and a second one or more reference voltages. The modulator may be configured to present an output signal in response to an input signal, the first reference voltages and the second reference voltages. A gain between the output signal and the input signal may be set by a capacitor ratio in said modulator.
摘要:
An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to regulate an output voltage generated in response to an input signal and a feedback of the output voltage. The second circuit may be configured to further regulate the output voltage in response to the input signal.
摘要:
Embodiments of the present disclosure provide an integrated circuit (IC) or semiconductor device. This semiconductor device includes a number of I/O pads or bumps on an outer surface of the semiconductor device, a number of electrostatic discharge (ESD) protection cells and functional modules. Individual ESD protection cells couple to and are downstream of individual I/O pads. Functional modules coupled to and are downstream of individual ESD protection cells. The ESD protection cells protect circuitry within the functional module from electrostatic discharge events. A rail clamp may provide an ESD discharge path between a first power supply bus and a second power supply bus. The ESD protection cells may be collected in groups to form clusters (with linear or irregular placement patterns). These clusters may be distributed autarchically across the semiconductor device overlapping one or more functional modules or within spaces or gaps between the functional modules.
摘要:
The present invention concerns an apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate a reference output voltage in response to a plurality of reference voltages. The second circuit may be configured to generate an output voltage in response to the reference output voltage and an unknown voltage. The output voltage may comprise accurately controlled hysteresis.
摘要:
Embodiments of the present disclosure provide an integrated circuit (IC) or semiconductor device. This semiconductor device includes a number of I/O pads or bumps on an outer surface of the semiconductor device, a number of electrostatic discharge (ESD) protection cells and functional modules. Individual ESD protection cells couple to and are downstream of individual I/O pads. Functional modules coupled to and are downstream of individual ESD protection cells. The ESD protection cells protect circuitry within the functional module from electrostatic discharge events. A rail clamp may provide an ESD discharge path between a first power supply bus and a second power supply bus. The ESD protection cells may be collected in groups to form clusters (with linear or irregular placement patterns). These clusters may be distributed autarchically across the semiconductor device overlapping one or more functional modules or within spaces or gaps between the functional modules.