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    CERAMIC MATERIAL AND PROCESS FOR PRODUCING THE SAME
    4.
    发明申请
    CERAMIC MATERIAL AND PROCESS FOR PRODUCING THE SAME 有权
    陶瓷材料及其制造方法

    公开(公告)号：US20100047696A1

    公开(公告)日：2010-02-25

    申请号：US12543676

    申请日：2009-08-19

    申请人： Toshihiro YOSHIDA ,  Akihiko HONDA ,  Yosuke SATO

    发明人： Toshihiro YOSHIDA ,  Akihiko HONDA ,  Yosuke SATO

    IPC分类号： H01M6/18 ,  H01G9/025

    CPC分类号： H01M10/0562 ,  C04B35/00 ,  C04B35/50 ,  H01M10/052 ,  H01M2300/0071 ,  Y02E60/122

    摘要： A ceramic material that can exhibit sufficient compactness and lithium (Li) conductivity to enable the use thereof as a solid electrolyte material for a lithium secondary battery and the like is provided. The ceramic material contains aluminum (Al) and has a garnet-type crystal structure or a garnet-like crystal structure containing lithium (Li), lanthanum (La), zirconium (Zr) and oxygen (O).

    摘要翻译： 提供了能够表现出足够的致密性和锂（Li）电导率以使其能够用作锂二次电池等的固体电解质材料的陶瓷材料。 陶瓷材料含有铝（Al），并且具有石榴石型晶体结构或含有锂（Li），镧（La），锆（Zr）和氧（O）的石榴石状晶体结构。

    Process for producing a planar body of an oxide single crystal
    5.
    发明授权
    Process for producing a planar body of an oxide single crystal 有权
    用于制造氧化物单晶的平面体的方法

    公开(公告)号：US06527851B2

    公开(公告)日：2003-03-04

    申请号：US09798750

    申请日：2001-03-02

    申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    IPC分类号： C30B1508

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

    摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

    摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。