发明授权
- 专利标题： Single crystal-growing method and apparatus
- 专利标题（中）： 单晶生长方法和装置
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申请号： US358066申请日： 1999-07-21
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公开(公告)号： US06036775A公开(公告)日： 2000-03-14
- 发明人: Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
- 申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
- 申请人地址： JPX Nagoya
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JPX Nagoya
- 优先权： JPX7-062585 19950322; JPX7-062586 19950322; JPX7-065883 19950324; JPX7-136578 19950602; JPX8-029078 19960216
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/08 ; C30B35/00
摘要：
A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
公开/授权文献
- US5571349A Method of producing twisted aluminum articles 公开/授权日：1996-11-05
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