公开(公告)号：US5650376A

公开(公告)日：1997-07-22

申请号：US554585

申请日：1995-11-06

Applicant: Massoud Badaye ,  Tadataka Morishita ,  Youichi Enomoto ,  Shoji Tanaka

Inventor： Massoud Badaye ,  Tadataka Morishita ,  Youichi Enomoto ,  Shoji Tanaka

IPC: C01G1/00 ,  C01G3/00 ,  C01G3/02 ,  C23C14/08 ,  C30B23/08 ,  C30B29/22 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24 ,  B32B9/00

CPC classification number: H01L39/126 ,  Y10S428/93 ,  Y10S505/701

Abstract: A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.

Abstract translation: 公开了具有以下组成的超导膜：（Nd，Ba）3Cu 3 O 7 - 其中d是大于0但小于0.5的数。 超导薄膜具有与YBa2Cu3O7相同的晶体结构，不同之处在于部分Nd位置和/或部分Ba位置被Ba和Nd原子所占据。

公开(公告)号：US5647904A

公开(公告)日：1997-07-15

申请号：US447520

申请日：1995-05-23

Applicant: Shunpei Yamazaki

Inventor： Shunpei Yamazaki

IPC: C30B15/30 ,  C30B29/22 ,  H01B12/02 ,  H01B13/00 ,  H01L39/24 ,  C30B15/14

CPC classification number: H01L39/2419 ,  Y10S420/901 ,  Y10S505/729 ,  Y10T117/1032

Abstract: A method and an apparatus for fabricating single crystals of superconducting ceramics are described. A powdered row oxide mixture is placed and molten in a melting pot. The surface of the molten mixture is approximately at the freezing point of the mixture. From the surface, a single crystal is pulled in accordance with the known pulling crystal technique. The pulled mixture is subjected to a magnetic field normal to the pulling direction. By virtue of the magnetic field, single crystal superconducing oxide ceramics can be obtained without twin crystals.

Abstract translation: 描述了一种用于制造超导陶瓷单晶的方法和装置。 将粉末状的行氧化物混合物放置并熔融在熔炉中。 熔融混合物的表面大致处于混合物的凝固点。 根据已知的拉晶技术，从表面拉出单晶。 拉出的混合物经受与牵引方向垂直的磁场。 通过磁场，可以获得没有双晶的单晶超导氧化物陶瓷。

公开(公告)号：US5635730A

公开(公告)日：1997-06-03

申请号：US467122

申请日：1995-06-06

Applicant: Nobuyoshi Sakakibara

Inventor： Nobuyoshi Sakakibara

IPC: C01G1/00 ,  C01G3/00 ,  C23C14/08 ,  C30B29/22 ,  H01L39/02 ,  H01L39/24 ,  H01L29/06 ,  H01L39/22

CPC classification number: H01L39/2461

Abstract: A superconducting oxide thin film device is composed of a LaAlO.sub.3 substrate and a YBCO thin film with a BaCeO.sub.3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.

Abstract translation: 超导氧化物薄膜器件由LaAlO 3衬底和设置在两者之间的BaCeO 3缓冲层的YBCO薄膜组成。 通过缓冲层的存在，膜和基板之间的粘附性增加。 缓冲层还抑制膜从基板剥离并将Ba从膜扩散到基板中。

公开(公告)号：US5627142A

公开(公告)日：1997-05-06

申请号：US279416

申请日：1994-07-25

Applicant: Yasuji Yamada ,  Masaru Nakamura ,  Noriyuki Tatsumi ,  Jiro Tsujino ,  Kanshi Ohtsu ,  Yasuo Kanamori ,  Minoru Tagami ,  Atsushi Kume ,  Yuh Shiohara ,  Shoji Tanaka

Inventor： Yasuji Yamada ,  Masaru Nakamura ,  Noriyuki Tatsumi ,  Jiro Tsujino ,  Kanshi Ohtsu ,  Yasuo Kanamori ,  Minoru Tagami ,  Atsushi Kume ,  Yuh Shiohara ,  Shoji Tanaka

IPC: C30B19/12 ,  C04B35/45 ,  C30B15/00 ,  C30B25/02 ,  C30B29/22 ,  H01L39/24 ,  C30B15/02

CPC classification number: C30B29/225 ,  C04B35/4508 ,  C30B15/00 ,  H01L39/2422 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/704 ,  Y10S505/729 ,  Y10S505/733

Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract translation: 公开了一种复合材料，其包括基板，设置在基板的表面上的取向膜，其由式LnBa2Cu3Oy的Y123金属氧化物的晶体形成，其中Ln表示Y或属于镧系元素，y表示 6-7的数量以及式LnBa2Cu3Oy的Y123金属氧化物层，其中Ln表示Y或属于镧系元素，y表示在取向膜上形成的数目6-7。

公开(公告)号：US5597411A

公开(公告)日：1997-01-28

申请号：US656697

申请日：1991-02-19

Applicant: Helmut Fritzsche ,  Stanford R. Ovshinsky ,  Rosa Young

Inventor： Helmut Fritzsche ,  Stanford R. Ovshinsky ,  Rosa Young

IPC: C30B23/04 ,  C30B23/08 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/22 ,  H01L21/203 ,  H01L39/24

CPC classification number: H01L39/2448 ,  C30B25/02 ,  C30B25/18 ,  C30B29/22 ,  H01L39/2422 ,  H01L39/2432 ,  Y10S505/819

Abstract: A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.

Abstract translation: 通过从衬底上的基本上所有其它成核位置的单个成核位点促进膜的外延生长，生长外延像单晶超导膜的方法。 本发明考虑使用掩模来系统地将基底的部分暴露于沉积设备。 该掩模可以包括可调整或固定的孔，并且如本文所述被操纵以系统地将基板的区域暴露于沉积设备。

公开(公告)号：US5567673A

公开(公告)日：1996-10-22

申请号：US412424

申请日：1995-03-29

Applicant: Dean W. Face ,  Kirsten E. Myers

Inventor： Dean W. Face ,  Kirsten E. Myers

IPC: C01G1/00 ,  C01G15/00 ,  C30B29/22 ,  H01L39/22 ,  H01L39/24

CPC classification number: H01L39/2422 ,  H01L39/2435 ,  H01L39/2464 ,  H01L39/2496 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/742 ,  Y10T428/24926

Abstract: This invention relates to a process of forming multilayered thallium-containing superconducting composites, wherein a first thallium-containing superconducting layer, an intermediate thallium-containing oxide layer and a second thallium-containing superconducting layer are successively deposited on a substrate by a vapor phase process by controlling the heating temperature, pressure of oxidizing gas and thallium vapor pressure during post-deposition annealing of the superconducting films.

Abstract translation: 本发明涉及一种形成多层含铊的超导复合材料的方法，其中第一含铊的超导层，含铊的氧化物层和第二含铊的超导层通过气相法在衬底上依次沉积 通过控制超导膜的后续退火时的加热温度，氧化气体压力和铊蒸气压。

公开(公告)号：US5549748A

公开(公告)日：1996-08-27

申请号：US372042

申请日：1995-01-12

Applicant: Volker R. Todt ,  Suvankar Sengupta ,  Donglu Shi

Inventor： Volker R. Todt ,  Suvankar Sengupta ,  Donglu Shi

IPC: C30B11/02 ,  C30B9/00 ,  C30B29/22 ,  C30B19/04

CPC classification number: C30B29/225 ,  C30B9/00

Abstract: A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.

Abstract translation: 制备单晶的方法。 制备方法包括制备特定组合物的前体材料，加热前体材料以实现包晶液体和晶体的包晶混合物，冷却包晶混合物以直接将多孔，可润湿的惰性基底上的混合物骤冷以除去包晶液体 在多孔基底上留下单晶。 或者，可以将包晶混合物冷却至固体物质并在多孔的惰性基材上再加热以熔化包晶液体的基质，同时使晶体未熔化，从而使包晶液体吸走。

公开(公告)号：US5548606A

公开(公告)日：1996-08-20

申请号：US331984

申请日：1994-10-31

Applicant: Robert H. Senn ,  Loren E. Record

Inventor： Robert H. Senn ,  Loren E. Record

IPC: C30B29/10 ,  C30B29/12 ,  C30B29/14 ,  C30B29/22 ,  C30B29/42 ,  C30B29/48 ,  C30B33/00 ,  H01L31/10 ,  H01S3/07 ,  H01S3/08 ,  H01S3/16 ,  H01S3/14

CPC classification number: C30B29/40 ,  C30B29/14 ,  C30B29/48 ,  C30B33/00 ,  H01S3/07 ,  H01S3/0612 ,  H01S3/16

Abstract: A multiform crystal 10 suitable for laser applications is described. The multiform crystal 10 comprises at least two single crystal segments 12 fused together with a joint 14 therebetween, the joint being substantially optically transparent to light propagating through the crystal 10. The multiform crystal 10 is formed by polishing two single crystal segments 12 to form at least one optically flat face on each segment. The polished faces are cleaned and contacted against one another to form a joint 14 between the crystal segments 12. Substantially all the oxygen in the joint 14 is removed. The joint 14 is maintained at a sufficiently high temperature and pressure to join the segments together at the joint forming the substantially optically transparent joint 14. Mounting fixtures suitable for holding the crystal segments 12 firmly against one another in a furnace, without causing undesirable thermal expansive forces to be exerted on the segments 12, are also described. The temperature cycle used to fuse crystal segments can also be used to heat treat laser single crystals to remove substantially all the contaminants and lattice defects in the crystal, providing higher light amplification properties in the crystal.

Abstract translation: 描述适用于激光应用的多晶体10。 多晶体10包括至少两个与其间的接头14熔合在一起的单晶片段12，该接合部对于通过晶体10传播的光基本上是光学透明的。多晶体10通过抛光两个单晶片段12而形成 每个片段上至少有一个光学平面。 抛光的表面被清洁并彼此接触以在晶体段12之间形成接头14.基本上所有的接头14中的氧被去除。 接头14保持在足够高的温度和压力下，以在形成基本上光学透明的接头14的接头处将节段连接在一起。适合于在炉中牢固地保持晶体段12彼此紧固的安装固定件，而不引起不期望的热膨胀 还将描述施加在段12上的力。 用于熔合晶体段的温度循环也可以用于热处理激光单晶，以消除晶体中的基本上所有的污染物和晶格缺陷，从而在晶体中提供较高的光放大特性。

公开(公告)号：US5523026A

公开(公告)日：1996-06-04

申请号：US423260

申请日：1995-04-17

Applicant: Chuangtian Chen ,  Baichang Wu ,  Yebin Wang ,  Wenrong Zeng ,  Linhua Yu ,  Qun Zou

Inventor： Chuangtian Chen ,  Baichang Wu ,  Yebin Wang ,  Wenrong Zeng ,  Linhua Yu ,  Qun Zou

IPC: G02F1/35 ,  C01B35/12 ,  C30B1/10 ,  C30B9/00 ,  C30B9/06 ,  C30B9/12 ,  C30B29/22 ,  G02B1/02 ,  G02F1/355 ,  G02F1/37 ,  F21V9/00 ,  C01B35/10 ,  G02B5/20

CPC classification number: C30B29/22 ,  C30B9/00 ,  G02F1/3551 ,  G02F1/37

Abstract: The present invention relates to a new type NLO crystal Strontium Beryllatoborate (Chemical formula Sr.sub.2 Be.sub.2 B.sub.2 O.sub.7, abbr. SBBO). The SBBO compound is synthesized by chemical reaction of solid state in high temperature sintering, Its chemical reaction equation is:2SrCO.sub.3 +2BeO+2H.sub.3 BO.sub.3 .fwdarw.Sr.sub.2 Be.sub.2 B.sub.2 O.sub.7 +2CO.sub.2 +3H.sub.2 OA flux method is applied to the growth of single crystal of Strontium Beryllatoborate, in which SrB.sub.2 O.sub.4, NaF and other fluorides were used as flux solvents. The result of measurement indicated that this compound has following structural and physical characteristics: space group: P6.sub.3 (C.sub.6.sup.6) point group: C .sub.6, unit cell: a=4.663(3) .ANG., c=15.311(7) .ANG.,z=2, V=283.3(.ANG.).sup.3. SBBO belongs to crystal of negative optical axis, its harmonic generation devices, optical parameter and amplifier devices and optic-wave guide devices in UV region will win wide application, the coherent light of wave length shorter than 200 nm can be produced through direct frequency-multiplication.

Abstract translation: 本发明涉及新型NLO晶体铍铍硼酸盐（化学式Sr2Be2B2O7，简称SBBO）。 SBBO化合物通过高温烧结固相化学反应合成，其化学反应方程式为：2SrCO3 + 2BeO + 2H3BO3-> Sr2Be2B2O7 + 2CO2 + 3H2O通量法适用于锶铍硼酸单晶的生长， 使用SrB2O4，NaF和其他氟化物作为助熔剂溶剂。 测量结果表明该化合物具有以下结构和物理特性：空间群：P63（C66）点组：C6，单位电池：a = 4.663（3）ANGSTROM，c = 15.311（7）ANGSTROM，z = 2 ，V = 283.3（ANGSTROM）3。 SBBO属于负光轴晶体，其紫外区域的谐波发生器件，光学参数和放大器器件和光波导器件将获得广泛应用，波长小于200nm的相干光可以通过直接频率 - 乘法。

公开(公告)号：US5480569A

公开(公告)日：1996-01-02

申请号：US228615

申请日：1994-04-15

Applicant: Albert A. Ballman ,  Lap K. Cheng

Inventor： Albert A. Ballman ,  Lap K. Cheng

IPC: G02F1/35 ,  C30B9/00 ,  C30B17/00 ,  C30B29/22 ,  G02F1/355 ,  G02F1/361 ,  C30B28/06

CPC classification number: C30B9/00 ,  C30B29/10

Abstract: Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO.sub.4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized by adding said dopant to a melt containing the components for forming MTiOAsO.sub.4, in an amount effective to provide a doped single domain crystal of MTiOAsO.sub.4 containing at least 10 ppm of said dopant.

Abstract translation: 公开了MTiOAsO4（其中M为K，Rb和/或Cs）的掺杂结晶组合物（例如，单结晶体晶体），其含有至少约10ppm的Fe，Sc和/或In掺杂剂。 还公开了一种助焊剂工艺，其特征在于将所述掺杂剂加入含有用于形成MTiOAsO 4的组分的熔体中，其量有效地提供含有至少10ppm所述掺杂剂的MTiOAsO 4的掺杂单结晶体晶体。