公开(公告)号：US20050168104A1

公开(公告)日：2005-08-04

申请号：US11009688

申请日：2004-12-10

申请人： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

发明人： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

IPC分类号： H03H3/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H01L41/08

CPC分类号： H03H9/587 ,  H03H9/564

摘要： Acoustic resonator device (1) includes an active element (6) and a support provided with a membrane (5). The active element (6) is provided with at least one piezoelectric layer (10) and is surmounted by a multilayer stack (12). The multilayer stack (12) is provided with at least three layers, including at least one layer (15) of high acoustic impedance and at least one layer (13) of low acoustic impedance. An integrated circuit including at least one such acoustic resonator device is also disclosed.

摘要翻译： 声谐振器装置（1）包括有源元件（6）和具有膜（5）的支撑件。 有源元件（6）设置有至少一个压电层（10），并被多层叠层（12）所覆盖。 多层堆叠（12）设置有至少三层，包括至少一层高声阻抗层（15）和至少一层低声阻抗层（13）。 还公开了包括至少一个这样的声谐振器装置的集成电路。

公开(公告)号：US06914368B2

公开(公告)日：2005-07-05

申请号：US10317145

申请日：2002-12-12

申请人： Daisuke Nakamura ,  Yukio Yoshino ,  Masaki Takeuchi ,  Yoshihiko Gotoh ,  Tadashi Nomura ,  Ken-ichi Uesaka

发明人： Daisuke Nakamura ,  Yukio Yoshino ,  Masaki Takeuchi ,  Yoshihiko Gotoh ,  Tadashi Nomura ,  Ken-ichi Uesaka

IPC分类号： H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H01L41/08

CPC分类号： H03H9/564 ,  H03H9/02015 ,  H03H9/02133 ,  H03H9/02157 ,  H03H9/173 ,  H03H9/174 ,  H03H9/568

摘要： A piezoelectric resonator includes a substrate and a vibrator. The vibrator includes a thin-film portion having at least one piezoelectric thin-film layer disposed on the substrate and at least one pair of upper and lower electrodes disposed on the substrate. The vibrator has a structure in which the thin-film portion is sandwiched from the upper and lower surfaces thereof by the upper and lower electrodes, which oppose each other in the depth direction, and the overlapping portion of the vibrator defined by the opposing upper and lower electrodes has a tetragonal shape, when viewed in the depth direction, other than a rectangle and a square, the tetragonal shape having substantially parallel sides having a longitudinal length equal to or smaller than about 10 times the oscillatory wavelength and also having at least one portion in which the distance between opposing electrode edges varies.

摘要翻译： 压电谐振器包括基板和振动器。 振动器包括具有设置在基板上的至少一个压电薄膜层和设置在基板上的至少一对上下电极的薄膜部分。 振动器具有这样的结构，其中薄膜部分被其上表面和下表面夹在上下电极之间，它们在深度方向上彼此相对，并且振动器的重叠部分由相对的上部和 下部电极在深度方向上看不到矩形和正方形，四边形形状具有基本上平行的边，纵向长度等于或小于振荡波长的约10倍，并且还具有至少一个 相对电极边缘之间的距离变化的部分。

公开(公告)号：US06911708B2

公开(公告)日：2005-06-28

申请号：US10780713

申请日：2004-02-19

申请人： Jae-Yeong Park

发明人： Jae-Yeong Park

IPC分类号： H03H9/56 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/58 ,  H03H9/70 ,  H03H9/72 ,  H01L29/84

CPC分类号： H03H9/706 ,  H03H9/02094 ,  H03H9/0571 ,  H03H9/0576 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/587 ,  H03H9/72 ,  H03H9/725

摘要： Disclosed are a film bulk acoustic resonator, a duplexer filter having the same, and a semiconductor package thereof. The film bulk acoustic resonator comprising: a semiconductor substrate; a lower electrode more than two layers formed at an upper surface of the semiconductor substrate; a piezoelectric layer deposited on an upper surface of the lower electrode with a certain thickness; and an upper electrode more than two layers formed at an upper surface of the piezoelectric layer, has an excellent bonding characteristic. The duplexer filter can microminiaturize a size thereof by integrating a film bulk acoustic filter formed by connecting the plurality of film bulk acoustic resonators serially and in parallel and peripheral passive elements of the film bulk acoustic filter into one semiconductor chip. Also, the semiconductor package is suitable for the duplexer filter.

摘要翻译： 公开了一种薄膜体声波谐振器，具有该双体滤波器的双层滤波器及其半导体封装。 该膜体声波谐振器包括：半导体衬底; 形成在所述半导体衬底的上表面的多于两层的下电极; 沉积在具有一定厚度的下电极的上表面上的压电层; 并且形成在压电层的上表面处的多于两层的上电极具有优异的接合特性。 双工器滤波器可以通过将通过将多个膜体声波谐振器串联并联并联的薄膜体声滤波器与薄膜体声滤波器的外围无源元件组合成一个半导体芯片而将其尺寸微小化。 此外，半导体封装适用于双工器滤波器。

公开(公告)号：US20050128027A1

公开(公告)日：2005-06-16

申请号：US10959313

申请日：2004-10-07

申请人： In-sang Song ,  Yun-kwon Park ,  Byeoung-ju Ha ,  Jun-sik Hwang

发明人： In-sang Song ,  Yun-kwon Park ,  Byeoung-ju Ha ,  Jun-sik Hwang

IPC分类号： H01L41/09 ,  H01L41/08 ,  H01L41/18 ,  H03H3/02 ,  H03H9/10 ,  H03H9/17 ,  H03H9/24 ,  H03H9/58 ,  H03H9/70

CPC分类号： H03H9/587 ,  H03H3/02 ,  H03H9/105 ,  H03H9/173 ,  Y10T29/42

摘要： An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

摘要翻译： 气隙式薄膜体声波谐振器（FBAR）及其制造方法。 还公开了采用气隙型FBAR的过滤器和双工器。 气隙式FBAR包括：第一基板，其上表面上的预定区域具有空腔部分; 电介质膜，其堆叠在所述第一基板的上部; 在所述第一基板和所述电介质膜之间形成的第一气隙; 堆叠的共振部分，包括形成在电介质膜的上部的下电极/压电层/上电极; 第二基板，在其下表面上的预定区域具有空腔部分，并且与第一基板接合; 以及在所述层叠的共振部和所述第二基板之间形成的第二气隙。 可以使用由液晶聚合物（LCP）制成的预定厚度的薄膜作为电介质膜。

公开(公告)号：US20050110597A1

公开(公告)日：2005-05-26

申请号：US10969636

申请日：2004-10-19

申请人： John Larson ,  Stephen Ellis ,  Yury Oshmyansky

发明人： John Larson ,  Stephen Ellis ,  Yury Oshmyansky

IPC分类号： H03H9/02 ,  H03H9/13 ,  H03H9/58 ,  H03H9/60 ,  H03H9/56

CPC分类号： H03H9/589 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/605

摘要： The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.

摘要翻译： 封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。 声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。 金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR器件的频率响应 轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。

公开(公告)号：US06897740B2

公开(公告)日：2005-05-24

申请号：US10681845

申请日：2003-10-08

申请人： Hiroyuki Fujino ,  Yoshihiko Gotoh

发明人： Hiroyuki Fujino ,  Yoshihiko Gotoh

IPC分类号： H03H9/64 ,  H03H9/02 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H03H9/70 ,  H03H9/72 ,  H04B1/52 ,  H03H9/54

CPC分类号： H03H9/706 ,  H03H9/0571 ,  H03H9/564 ,  H03H9/568 ,  H03H9/725

摘要： A duplexer includes a transmission band filter and a reception band filter connected in parallel to each other and connected to an antenna terminal. The transmission band filter and the reception band filter are accommodated in a package covered with an electroconductive lid. The package is mounted on a mounting substrate having the antenna terminal and covered with an electroconductive shield mounted on the mounting substrate. At least one of the transmission band filter and the reception band filter has a ground terminal connected to the lid. The lid is electrically connected to the shield.

摘要翻译： 双工器包括彼此并联并连接到天线端子的传输频带滤波器和接收频带滤波器。 传输带滤波器和接收带滤波器被容纳在被导电盖子覆盖的封装中。 该封装安装在具有天线端子的安装基板上，并被安装在安装基板上的导电屏蔽覆盖。 传输带滤波器和接收带滤波器中的至少一个具有连接到盖的接地端子。 盖子与屏蔽件电连接。

公开(公告)号：US20050099092A1

公开(公告)日：2005-05-12

申请号：US10979276

申请日：2004-11-03

申请人： Hiroyuki Nakamura ,  Keiji Onishi ,  Hiroshi Nakatsuka ,  Hiroshi Yamaguchi ,  Takehiko Yamakawa

发明人： Hiroyuki Nakamura ,  Keiji Onishi ,  Hiroshi Nakatsuka ,  Hiroshi Yamaguchi ,  Takehiko Yamakawa

IPC分类号： H01L41/08 ,  H03H3/02 ,  H03H9/02 ,  H03H9/58 ,  H03H9/60

CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/587

摘要： A piezoelectric device 100 includes first and second piezoeletric resonators 110, 120. The first piezoeletric resonator 110 has a structure in which a cavity 111, a lower electrode 112, a piezoeletric layer 113, and an upper electrode 114 are formed on a substrate 101. The second piezoeletric resonator 120 has a structure in which a cavity 121, a lower electrode 122, a piezoeletric layer 123, and an upper electrode 124 are formed on the substrate 110. A feature of the above-structure piezoelectric device 100 is that the piezoeletric layers 113, 123 have the same film thickness and the depth t1 of the cavity 111 of the first piezoeletric resonator 110 is different from the depth t2 of the cavity 121 of the second piezoeletric resonator 120.

摘要翻译： 压电装置100包括第一和第二压电谐振器110,120。 第一压电谐振器110具有其中在基板101上形成空腔111，下电极112，压电层113和上电极114的结构。 第二压电谐振器120具有其中在基板110上形成空腔121，下电极122，压电层123和上电极124的结构。 上述结构的压电装置100的特征在于，压电层113,123具有相同的膜厚度，并且第一压电谐振器110的空腔111的深度t 1与腔体121的深度t 2不同 第二压电谐振器120。

公开(公告)号：US20050093653A1

公开(公告)日：2005-05-05

申请号：US10699289

申请日：2003-10-30

申请人： John Larson

发明人： John Larson

IPC分类号： H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/58 ,  H03H9/60

CPC分类号： H03H9/587 ,  H03H9/132 ,  H03H9/584 ,  H03H9/605 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49117

摘要： The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

摘要翻译： 带通滤波器具有堆叠的一对薄膜体声共振器（FBAR）和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电材料层。 声耦合器控制FBAR之间的声能耦合。 具体来说，声耦合器耦合FBAR之间较少的声能，而不是FBAR之间的直接接触。 减少的声耦合给出带通滤波器所需的带内和带外特性。

公开(公告)号：US06885262B2

公开(公告)日：2005-04-26

申请号：US10697474

申请日：2003-10-30

申请人： Kosuke Nishimura ,  Masataka Fujinaga ,  Masahide Kondo

发明人： Kosuke Nishimura ,  Masataka Fujinaga ,  Masahide Kondo

IPC分类号： H03H9/58 ,  H03H9/17 ,  H03H9/56 ,  H03H9/54

CPC分类号： H03H9/564 ,  H03H9/568 ,  H03H2003/0457

摘要： A band-pass filter has a ladder-type circuit including first and second terminals whose characteristic impedances are Z0, and series elements and shunt elements disposed between a first terminal and a second terminal, each of the series elements and shunt elements containing a film bulk acoustic resonator. Assuming that characteristic impedance of any one of the series elements is Z1 and that characteristic impedance of any one of the shunt elements is Z2, the characteristic impedances Z0, Z1, and Z2 have a relation of 1

摘要翻译： 带通滤波器具有梯形电路，其包括特征阻抗为Z 0的第一和第二端子，以及设置在第一端子和第二端子之间的串联元件和分流元件，每个串联元件和分流元件包含膜 体声波谐振器。 假设串联元件中的任一个的特性阻抗为Z 1，并且分路元件中的任一个的特性阻抗为Z 2，则特性阻抗Z 0，Z 1和Z 2具有1 <（Z 1 / Z 0）<2，优选为1.3 <（Z 1 / Z 0）<1.7，0.5 <（Z 2 / Z 0）<1，优选为0.6 <（Z 2 / Z 0）<0.8。

公开(公告)号：US20050073377A1

公开(公告)日：2005-04-07

申请号：US10790011

申请日：2004-03-02

申请人： Sang Sul ,  Jea Shin

发明人： Sang Sul ,  Jea Shin

IPC分类号： H03H9/56 ,  H03H9/58 ,  H03H9/60

CPC分类号： H03H9/605

摘要： The present invention relates to a ladder-type bulk acoustic wave filter with a common ground inductor, which obtains high attenuation in a high frequency stop band adjacent to a pass band without the insertion loss degradation of the pass band, so that the ladder-type bulk acoustic wave filter is useful as a transmit filter. According to the present invention, the plurality of shunt resonators are commonly grounded through the inductor, so that zeros are generated due to the interaction between the stray capacitance of shunt resonators and the common ground inductor, thus improving attenuation characteristics in a high frequency stop band.

摘要翻译： 本发明涉及一种具有公共接地电感器的梯形体声波滤波器，其在与通带相邻的高频阻带中获得高衰减，而没有通带的插入损耗降低，使得梯型 体声波滤波器可用作发射滤波器。 根据本发明，多个并联谐振器通常通过电感器接地，从而由于并联谐振器和公共接地电感器的杂散电容之间的相互作用而产生零，从而改善了高频阻带中的衰减特性 。