公开(公告)号：US20050169342A1

公开(公告)日：2005-08-04

申请号：US10976073

申请日：2004-10-28

申请人： Rick Glew ,  David MacQuistan ,  Ian Woods ,  John White

发明人： Rick Glew ,  David MacQuistan ,  Ian Woods ,  John White

IPC分类号： H01S3/08 ,  H01S5/12 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/305 ,  H01S5/3235

摘要： To make a grating substructure in semiconductor material for use in a DFB laser, a first layer of semiconductor material is doped at a first doping concentration. A second layer of the semiconductor material is formed over the first layer. The second layer is doped higher concentration than the first layer and sufficiently different to change the refractive index of the semiconductor material. A third layer doped at a concentration comparable with the first layer is formed over the second layer. An etch is performed through a mask to form spaced etched regions extending at least through the second and third layers. Then a further layer of the semiconductor material doped at a doping concentration comparable the first and third layers is overgrown on the wafer. This results in a composite layer of the semiconductor material doped at a low doping concentration containing spaced islands of the semiconductor material doped with a dopant at a high doping concentration and having a different refractive index from the composite layer. The semiconductor material is preferably silicon-doped InP.

摘要翻译： 为了在用于DFB激光器的半导体材料中制造光栅子结构，以第一掺杂浓度掺杂第一层半导体材料。 在第一层上形成半导体材料的第二层。 第二层掺杂比第一层更高的浓度，并且充分地不同以改变半导体材料的折射率。 在第二层上形成以与第一层相当的浓度掺杂的第三层。 通过掩模进行蚀刻以形成至少延伸穿过第二层和第三层的间隔的蚀刻区域。 然后，以与第一和第三层相当的掺杂浓度掺杂的另一层半导体材料在晶片上长满。 这导致以低掺杂浓度掺杂的半导体材料的复合层，其中掺杂掺杂剂的半导体材料的间隔岛以高掺杂浓度并且具有与复合层不同的折射率。 半导体材料优选是掺杂硅的InP。

公开(公告)号：US20050169336A1

公开(公告)日：2005-08-04

申请号：US10899046

申请日：2004-07-27

申请人： Ryoji Ishii ,  Hideo Nakayama ,  Yasuaki Kuwata

发明人： Ryoji Ishii ,  Hideo Nakayama ,  Yasuaki Kuwata

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/30 ,  H01S5/343

CPC分类号： H01S5/18313 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/18394 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432 ,  H01S2301/166

摘要： A surface-emitting semiconductor laser includes comprising a substrate, a first mesa that is formed on the substrate and includes at least one mesa capable of emitting laser light, and a second mesa that is formed on the substrate and includes at least one mesa restraining emission of laser light.

摘要翻译： 一种表面发射半导体激光器包括：衬底，形成在衬底上并包括能够发射激光的至少一个台面的第一台面和形成在衬底上的第二台面，并且包括至少一个台面限制发射 的激光。

公开(公告)号：US20050105577A1

公开(公告)日：2005-05-19

申请号：US10979273

申请日：2004-11-02

申请人： Toshiya Fukuhisa ,  Hidetoshi Furukawa

发明人： Toshiya Fukuhisa ,  Hidetoshi Furukawa

IPC分类号： H01S5/30 ,  H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/16 ,  H01S5/223 ,  H01S5/34 ,  H01S5/40

CPC分类号： H01S5/4031 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/4087

摘要： The present invention provides a semiconductor laser that includes a substrate and at least two active layers, wherein two resonators that respectively include the active layers are mutually arranged in parallel, and wherein in the resonators, the region of the active layers into which a current is injected, have different lengths. Thus, in the two wavelength laser of the present invention, by overcoming the limitation of the lengths of the resonators that are determined by the cleavages, it is possible to independently design and manufacture effective resonator lengths of a plurality of lasers of different characteristics, such as red lasers and infrared lasers, employ resonator lengths that are suitable for the respective desired characteristics, and provide a semiconductor with improved laser characteristics.

摘要翻译： 本发明提供了一种半导体激光器，其包括基板和至少两个有源层，其中分别包括有源层的两个谐振器相互平行布置，并且其中在谐振器中，电流为有源层的区域 注射，长度不同。 因此，在本发明的两个波长激光器中，通过克服通过切割确定的谐振器的长度的限制，可以独立地设计和制造具有不同特性的多个激光器的有效谐振器长度，例如 作为红色激光器和红外激光器，采用适合于各自期望特性的谐振器长度，并提供具有改进的激光特性的半导体。

公开(公告)号：US20050083979A1

公开(公告)日：2005-04-21

申请号：US10688600

申请日：2003-10-17

申请人： Michael Leary ,  Danny Mars ,  Sungwon Roh ,  Danielle Chamberlin ,  Ying-Lan Chang

发明人： Michael Leary ,  Danny Mars ,  Sungwon Roh ,  Danielle Chamberlin ,  Ying-Lan Chang

IPC分类号： H01S5/00 ,  H01S5/024 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/024 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/305 ,  H01S5/3095 ,  H01S5/343

摘要： A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.

摘要翻译： 隧道结结构包括第一半导体材料的n型隧道结层，第二半导体材料的p型隧道结层和隧道结层之间的隧道结。 第一半导体材料包括镓（Ga），氮（N），砷（As），并掺杂有Ⅵ族掺杂剂。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。 掺杂第一半导体材料n型与第Ⅵ族掺杂剂使第一半导体材料中的掺杂浓度最大化，从而进一步提高隧道的可能性。

公开(公告)号：US06879612B1

公开(公告)日：2005-04-12

申请号：US10054826

申请日：2002-01-23

申请人： John Wasserbauer

发明人： John Wasserbauer

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0612 ,  H01S5/1221 ,  H01S5/18308 ,  H01S5/2063 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3432

摘要： A temperature insensitive vertical cavity laser includes an active region, having a plurality of quantum wells, formed between first and second mirrors. The gain of each of said quantum wells or groups of quantum wells operate quasi-independently at different temperatures such that stimulated emission is dominated by a different quantum well or group of quantum wells at different temperatures.

摘要翻译： 温度不敏感的垂直腔激光器包括形成在第一和第二反射镜之间的具有多个量子阱的有源区。 每个所述量子阱或量子阱组的增益在不同温度下准独立地运行，使得受激发射由不同量子阱或不同温度下的量子阱组支配。

公开(公告)号：US06841407B2

公开(公告)日：2005-01-11

申请号：US09935352

申请日：2001-08-21

申请人： Larry A. Coldren ,  Eric M. Hall ,  Shigeru Nakagawa ,  Guilhem Almuneau

发明人： Larry A. Coldren ,  Eric M. Hall ,  Shigeru Nakagawa ,  Guilhem Almuneau

IPC分类号： H01S5/024 ,  H01S5/042 ,  H01S5/183 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/18305 ,  H01S5/18316 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/2086 ,  H01S5/305 ,  H01S5/3095 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34306

摘要： A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.

摘要翻译： 用于增加垂直腔表面发射激光器（VCSEL）的方法，用于增加外部量子效率和降低阈值电流，涉及施加到VCSEL的有源区的蚀刻混合物。 蚀刻混合物的设计方法是选择性地以比VCSEL相关联的多个DBRS中的至少一个蚀刻速率快的速率选择性地刻蚀VCSEL的有源区。

公开(公告)号：US20040213310A1

公开(公告)日：2004-10-28

申请号：US10826354

申请日：2004-04-19

申请人： FUJI XEROX CO., LTD.

发明人： Hiromi Otoma

IPC分类号： H01S005/00 ,  H01S003/08

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/173

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a first semiconductor multilayer reflection film of a first conduction type on the semiconductor substrate; a second semiconductor multilayer reflection film of a second conduction type; an active region and a current confining layer interposed between the first and second semiconductor multilayer reflection films; and a low-resistance layer interposed between the current confining layer and the active region.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 半导体衬底上的第一导电类型的第一半导体多层反射膜; 第二导电类型的第二半导体多层反射膜; 插入在第一和第二半导体多层反射膜之间的有源区和电流限制层; 以及介于电流限制层和有源区之间的低电阻层。

公开(公告)号：US06798817B2

公开(公告)日：2004-09-28

申请号：US09935012

申请日：2001-08-21

申请人： Larry A. Coldren ,  Eric M. Hall ,  Guilhem Almuneau

发明人： Larry A. Coldren ,  Eric M. Hall ,  Guilhem Almuneau

IPC分类号： H01S308

CPC分类号： B82Y20/00 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/18305 ,  H01S5/18316 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/2086 ,  H01S5/305 ,  H01S5/3095 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34306

摘要： A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.

摘要翻译： 用于垂直腔表面发射激光器（VCSEL）的分布式布拉格反射器（DBR）具有包括铝，镓，砷和锑元素的半导体材料系统。 在DBR结构中使用锑允许电流通过DBR泵送到有源区域，以提供VCSEL的长波长连续波动操作。

公开(公告)号：US20040131098A1

公开(公告)日：2004-07-08

申请号：US10471794

申请日：2004-03-11

发明人： Dmitri Zalmanovich Garbuzov ,  Raymond J Menna

IPC分类号： H01S005/00

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34306

摘要： A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.

摘要翻译： 公开了一种用于提高诸如半导体激光器，超发光发光二极管（SLD），增益芯片，光放大器之类的光电子器件的效率的方法。 4B。 根据本发明的原理，至少一个阻挡层（70）插入在构成该装置的材料之间的界面处。 至少一个阻挡层产生防止电子从包含在波导区域中的器件有源区域泄漏到器件覆盖区域（66）的势垒。 在本发明的一个方面，在具有不同导电性的半导体材料的接合处形成阻挡层（70）。 阻挡层防止电子进入不同极性的材料。 在本发明的另一方面，低掺杂或未掺杂区域（64）定位成与阻挡层（70）相邻以减小光学损耗。

公开(公告)号：US06728287B2

公开(公告)日：2004-04-27

申请号：US09978570

申请日：2001-10-18

申请人： Koji Otsubo

发明人： Koji Otsubo

IPC分类号： H01S5183

CPC分类号： H01S5/18341 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18372 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3201 ,  H01S5/34306 ,  H01S2301/173

摘要： A lower multi-layer mirror is disposed on a substrate made of a first semiconductor having a first lattice constant. The lower multi-layer mirror has a lamination structure that a first layer made of an oxide of a second semiconductor and a second layer made of a third semiconductor are alternately stacked. A strain-relaxation layer is disposed on the lower multi-layer mirror, the strain-relaxation layer being made of a fourth semiconductor having a second lattice constant different from the first lattice constant. An active layer is disposed on the strain-relaxation layer. The active layer including a luminescence region is made of a fifth semiconductor having a third lattice constant different from the first and second lattice constants. An upper multi-layer mirror is disposed on the active layer. A surface-emitting semiconductor laser is provided which has a high efficiency and a low heat resistance.

摘要翻译： 下部多层反射镜设置在由具有第一晶格常数的第一半导体制成的基板上。 下层多层反射镜具有由第二半导体的氧化物构成的第一层和由第三半导体构成的第二层交替层叠的层叠结构。 应变弛豫层设置在下多层反射镜上，应变松弛层由具有不同于第一晶格常数的第二晶格常数的第四半导体制成。 活性层设置在应变松弛层上。 包括发光区域的有源层由具有不同于第一和第二晶格常数的第三晶格常数的第五半导体制成。 上层多层反射镜设置在有源层上。 提供了具有高效率和低耐热性的表面发射半导体激光器。