PHOTODIODE OF THE TYPE AVALANCHE PHOTODIODE
    81.
    发明申请
    PHOTODIODE OF THE TYPE AVALANCHE PHOTODIODE 审中-公开
    类型的AVALANCHE光伏的光致变色

    公开(公告)号:US20120235267A1

    公开(公告)日:2012-09-20

    申请号:US13497546

    申请日:2010-09-02

    IPC分类号: H01L31/0232

    摘要: A front-illuminated avalanche photodiode (APD) includes an opening (16) for incident light, a number of various semiconductor layers from the opening and downwards including a multiplication layer (7), a field-control layer (8) and an absorption layer (10), where the absorption layer is arranged to absorb photons. Under the absorption layer (10) there is at least one Bragg mirror (14) arranged to reflect photons, that have passed the absorption layer (10) from the opening back to the absorption layer.

    摘要翻译: 前照明雪崩光电二极管(APD)包括用于入射光的开口(16),来自开口和向下的多个各种半导体层包括乘法层(7),场控制层(8)和吸收层 (10),其中吸收层被布置成吸收光子。 在吸收层(10)下方,设置有至少一个布拉格反射镜(14),以反射已经从吸收层(10)从开口返回到吸收层的光子。

    Very high transmittance, back-illuminated, silicon-on-sapphire semiconductor wafer substrate for high quantum efficiency and high resolution, solid-state, imaging focal plane arrays
    82.
    发明申请
    Very high transmittance, back-illuminated, silicon-on-sapphire semiconductor wafer substrate for high quantum efficiency and high resolution, solid-state, imaging focal plane arrays 失效
    非常高的透射率,背照式,蓝宝石蓝宝石半导体晶片衬底,用于高量子效率和高分辨率,固态,成像焦平面阵列

    公开(公告)号:US20120193636A1

    公开(公告)日:2012-08-02

    申请号:US12931363

    申请日:2011-01-31

    IPC分类号: H01L29/20 H01L21/205

    摘要: An advanced, very high transmittance, back-illuminated, silicon-on-sapphire wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or silicon-germanium avalanche photodiode detector arrays. The wafer substrate incorporates a stacked antireflective bilayer between the sapphire and silicon layers, comprised of single crystal aluminum nitride (AlN) and non-stoichiometric, silicon rich, amorphous silicon nitride (a-SiNX 50% for 250-300 nm, T>70% for 300-400 nm and T>90% for 400-1100 nm.

    摘要翻译: 提供先进,非常高的透射率,背照式蓝宝石硅片晶片衬底设计,可实现高量子效率和高分辨率硅或硅 - 锗雪崩光电二极管检测器阵列。 晶片衬底在蓝宝石和硅层之间并入层叠的抗反射双层,由单晶氮化铝(AlN)和非化学计量的富含硅的非晶氮化硅(a-SiNX <1.33)组成,其提供最佳的折射率匹配 蓝宝石和硅。 沉积在稀薄蓝宝石背表面上的四分之一波长的氟化镁(λ/ 4-MgF2)抗反射层在空气蓝宝石界面处提供折射率匹配。 为a-SiNX选择x = 0.62的组成,调整该层的最佳折射率。 选择单晶AlN的52nm的设计厚度,对于a-SiN0.62选择30nm,对于λ/ 4-MgF2,选择120nm的背光照射光透射率> 50%,250-300nm,T> 70% 对于300-400nm,对于400-1100nm,T> 90%。

    FREE-STANDING TWO-SIDED DEVICE FABRICATION
    84.
    发明申请
    FREE-STANDING TWO-SIDED DEVICE FABRICATION 有权
    自由站立双面设备制造

    公开(公告)号:US20120038881A1

    公开(公告)日:2012-02-16

    申请号:US13278026

    申请日:2011-10-20

    IPC分类号: G02C7/04 H01L31/18

    摘要: Solar cells attached to a contact lens are provided, as well as methods for making the solar cells and contact lenses. The solar cells have electrodes on only one side of the device, which facilitates attachment of the solar cell to a contact lens. In one embodiment, the solar cells are made using a “two sided” process. By using the two-sided process, solar cells of only a few microns in thickness can be fabricated. Such relatively thin solar cells can be incorporated into a contact lens without discomfort to the wearer. By providing an infinitely renewable power source on a contact lens, the solar cells enable the use of electronic components on the contact lens while eliminating the recharging or replacing issues that arise with batteries.

    摘要翻译: 提供了附着于隐形眼镜的太阳能电池,以及制造太阳能电池和隐形眼镜的方法。 太阳能电池仅在设备的一侧具有电极,这有助于将太阳能电池连接到隐形眼镜。 在一个实施例中,使用“双面”方法制造太阳能电池。 通过使用双面工艺,可以制造仅几微米厚的太阳能电池。 这种相对薄的太阳能电池可以并入到隐形眼镜中,而不会对佩戴者造成不适。 通过在隐形眼镜上提供无限可再生的电源,太阳能电池能够在隐形眼镜上使用电子部件,同时消除充电或更换电池产生的问题。

    Photodetector and display device provided with the same
    85.
    发明授权
    Photodetector and display device provided with the same 有权
    光电检测器和显示设备提供相同的

    公开(公告)号:US08110887B2

    公开(公告)日:2012-02-07

    申请号:US12602395

    申请日:2008-06-12

    IPC分类号: H01L31/102

    摘要: Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate (20) including a transparency base substrate (2), a plurality of active elements and a photodetector. The photodetector includes a light-shielding layer (3) provided on the base substrate (2), and a photodiode (1) arranged on an upper layer of the light-shielding layer (3). The light-shielding layer (3) is overlapped with the photodiode (1) in the thickness direction of the base substrate (2). The photodiode (1) includes a silicon layer (11) insulated electrically from the light-shielding layer (3). The silicon layer (11) includes a p-layer (11c), an i-layer (11b) and an n-layer (11a) that are provided adjacent to each other in the planar direction. The p-layer (11c) is formed so that its area (length Lp) will be larger than the area (length Ln) of the n-layer (11a).

    摘要翻译: 提供一种能够抑制光电二极管之间的输出特性的变化的光检测器和具有该光检测器的显示装置。 使用的显示装置具有包括透明性基板(2),多个有源元件和光电检测器的有源矩阵基板(20)。 光电检测器包括设置在基底基板(2)上的遮光层(3)和布置在遮光层(3)的上层上的光电二极管(1)。 遮光层(3)在基底(2)的厚度方向与光电二极管(1)重叠。 光电二极管(1)包括与遮光层(3)电绝缘的硅层(11)。 硅层(11)包括在平面方向上彼此相邻设置的p层(11c),i层(11b)和n层(11a)。 形成p层(11c),使得其面积(长度Lp)将大于n层(11a)的面积(长度Ln)。

    Radiation-Receiving Semiconductor Component and Optoelectronic Device
    86.
    发明申请
    Radiation-Receiving Semiconductor Component and Optoelectronic Device 有权
    辐射接收半导体元件和光电器件

    公开(公告)号:US20120007202A1

    公开(公告)日:2012-01-12

    申请号:US13254366

    申请日:2010-03-10

    IPC分类号: H01L31/0232

    摘要: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 μm. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

    摘要翻译: 指定了辐射接收半导体元件。 半导体体由硅形成,具有辐射入射面和吸收区。 电磁辐射通过辐射入射面进入半导体本体并被吸收。 吸收区的厚度最多为10μm。 过滤层由电介质材料形成。 过滤层覆盖半导体本体的辐射入射面。 灌封体至少在其辐射入射面上覆盖半导体本体。 灌封体包含辐射吸收材料。

    PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME
    87.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    光电转换装置及其制造方法

    公开(公告)号:US20120000518A1

    公开(公告)日:2012-01-05

    申请号:US13256813

    申请日:2010-03-16

    IPC分类号: H01L31/06 H01L31/18

    摘要: A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.

    摘要翻译: 提供一种光电转换装置,其中具有形成在第一透光性绝缘基板的一个表面上的多个第一光电转换元件的第一光电转换模块和具有形成在第一透光性绝缘基板的一个表面上的多个光电转换元件的第二光电转换模块 第二透光性绝缘基板与第一光电转换元件和位于内侧的第二光电转换元件接合。 光电转换装置包括通过串联电连接第一光电转换元件和布置在彼此相对的位置的第二光电转换元件而形成的多个光电转换元件对。 所有光电转换元件对串联电连接。

    Solid-state imaging device and signal processing method
    88.
    发明授权
    Solid-state imaging device and signal processing method 有权
    固态成像装置及信号处理方法

    公开(公告)号:US08035710B2

    公开(公告)日:2011-10-11

    申请号:US12134261

    申请日:2008-06-06

    申请人: Shinzo Koyama

    发明人: Shinzo Koyama

    摘要: A solid-state imaging device including a color filter having a filter characteristic more approaching to a human visual sensitivity is provided. The color filter including a group of dielectric layers has high-refractive-index-material films and low-refractive-index-material films, the high-refractive-index-material film and the low-refractive-index-material film being n films and (n−1) films, respectively, which are laminated alternately, n being an integer equal to or larger than 4. The color filter includes at least a red-transmission filter, a green-transmission filter, and a blue-transmission filter. The group of dielectric layers is common in the color filter and includes two of the high-refractive-index-material films and one of the low-refractive-index-material films positioned between and in contact with the two of high-refractive-index-material films. In the red-transmission filter, a first one of low-refractive-index-material films and a second one of low-refractive-index-material films, which are not in the group of dielectric layers, have a thickness different from each other.

    摘要翻译: 提供了一种包括具有更接近人类视觉灵敏度的滤波器特性的滤色器的固态成像装置。 包括一组电介质层的滤色器具有高折射率材料膜和低折射率材料膜,高折射率材料膜和低折射率材料膜是n个膜 和(n-1)膜,它们交替层叠,n是等于或大于4的整数。滤色器至少包括红色透射滤光片,绿色透射滤光片和蓝色透射滤光片 。 介电层组在彩色滤光片中是常见的,并且包括两个高折射率材料膜和位于两个高折射率材料膜之间的低折射率材料膜之一 材料薄膜。 在红色透射滤光片中,不在介电层组中的低折射率材料薄膜和低折射率材料薄膜中的第一种具有彼此不同的厚度 。

    Photodiode for multiple wavelength operation
    90.
    发明授权
    Photodiode for multiple wavelength operation 失效
    用于多波长操作的光电二极管

    公开(公告)号:US07956432B2

    公开(公告)日:2011-06-07

    申请号:US12365141

    申请日:2009-02-03

    IPC分类号: H01L21/02

    摘要: A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.

    摘要翻译: 光电二极管包括在其至少一部分上具有第一半导体型表面区域的基板和形成在表面区域的一部分中的第二半导体型表面层。 多层抗反射涂层(ARC)在第二半导体型表面层上,其中多层ARC包括至少两个不同的电介质层。 耐氧化物蚀刻的层在多层ARC的外围部分之上。 另外的层在耐氧化物蚀刻层上方,并且因此在多层ARC的周边部分之上。 一个窗口向下延伸到多层ARC。 光电二极管区域由第一半导体型表面区域和第二半导体型表面层的pn结形成。