公开(公告)号：US20150333097A1

公开(公告)日：2015-11-19

申请号：US14139071

申请日：2013-12-23

Applicant: DRS RSTA, Inc.

Inventor： Pradip Mitra

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/14696 ,  H01L2224/81141 ,  H01L2224/81193 ,  H04N5/3696

Abstract: A method for manufacturing an imaging device is provided. The method comprises forming a contact pad over a semiconductor substrate. The contact pad has a malleable metal. The method further comprises providing a readout circuit having a first side and a contact plug. The contact plug has a base affixed to the first side of the readout circuit and a plurality of prongs extending from the base away from the first side. The first side of the readout circuit is moved towards the substrate so that the prongs of the contact plug are pressed into the pad and displace a portion of the pad into a space defined by and between a first and a second of the prongs. Stop elements formed over the substrate are aligned with and contact stop elements provided on the readout circuit so that the prongs are inhibited from passing completely through the contact pad.

Abstract translation: 提供了一种用于制造成像装置的方法。 该方法包括在半导体衬底上形成接触焊盘。 接触垫具有可延展的金属。 该方法还包括提供具有第一侧和接触插塞的读出电路。 接触插头具有固定在读出电路的第一侧上的基座和从底座延伸离开第一侧的多个插脚。 读出电路的第一侧朝向衬底移动，使得接触插头的插脚被压入衬垫中，并将衬垫的一部分移动到由第一和第二插脚之间限定的空间中。 形成在衬底上的停止元件与设置在读出电路上的止动元件对准并且接触止动元件，使得插脚被禁止完全穿过接触垫。

公开(公告)号：US20140361393A1

公开(公告)日：2014-12-11

申请号：US14298158

申请日：2014-06-06

Applicant: Siemens Aktiengesellschaft

Inventor： Sakari KANEKU ,  Yasuhiro SHUTO ,  Akira TACHIBANA

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L27/14698 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/085

Abstract: A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

Abstract translation: 公开了一种半导体元件，其包括具有电极分割槽的结构，其中暗电流比现有示例中的小。 还公开了形成这种凹槽的方法。 在一个实施例中，将形成在基板表面上的电极层进行电分割的凹槽形成为V形横截面形状，电极层中的构成凹槽的凹槽侧壁是倾斜表面。 形成凹槽的方法的一个实施例包括使用切割刀片，该切割刀片具有被锐化成V形的刀片前端部分，以切割半导体晶片，其中在衬底的表面上包括电极层的多个图案的半导体元件 形成具有在每个半导体元件中分割电极层的V形横截面形状的凹槽。

公开(公告)号：US20140295122A1

公开(公告)日：2014-10-02

申请号：US14346804

申请日：2012-10-01

Applicant: Heptagon Micro Optics Pte. Ltd

Inventor： Peter Riel ,  Hartmut Rudmann ,  Markus Rossi

IPC: B81B7/04 ,  B81C1/00

CPC classification number: B81B7/04 ,  B81C1/00904 ,  H01L27/14618 ,  H01L27/14685 ,  H01L27/14696 ,  H01L2924/0002 ,  Y10T29/49002 ,  Y10T428/18 ,  H01L2924/00

Abstract: The method for manufacturing an object comprises the steps of (a) providing a wafer comprising a multitude of semi-finished objects; (b) separating said wafer into parts referred to as sub- wafers, at least one of said sub-wafers comprising a plurality of said semi-finished objects; (c) processing at least a portion of said plurality of semi-finished objects by subjecting said at least one sub-wafer to at least one processing step; and preferably also the step of (d) separating said at least one sub-wafer into a plurality of parts.

Abstract translation: 制造物体的方法包括以下步骤：（a）提供包括多个半成品的晶片; （b）将所述晶片分离成称为子晶片的部件，所述子晶片中的至少一个包括多个所述半成品; （c）通过对所述至少一个子晶片进行至少一个处理步骤来处理所述多个半成品的至少一部分; 并且还优选地（d）将所述至少一个子晶片分成多个部分的步骤。

公开(公告)号：US08669135B2

公开(公告)日：2014-03-11

申请号：US13572436

申请日：2012-08-10

Applicant: Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang

IPC: H01L21/00 ,  H01L27/088

CPC classification number: H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14696

Abstract: A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.

Abstract translation: 公开了一种用于制造3D图像传感器结构的系统和方法。 该方法包括在基板上提供具有背面照射感光区域的图像传感器，将第一电介质层施加到与图像数据收集的基板侧相对的基板的第一侧，以及施加可选择的多晶硅的半导体层， 第一介电层。 可以在半导体层内的第一介电层上形成至少一个控制晶体管，并且可以可选地是行选择，复位或源极跟随器晶体管。 可以在第一介电层上施加金属间电介质; 并且可以具有布置在其中的至少一个金属互连。 第二层间电介质层可以设置在控制晶体管上。 电介质层和半导体层可以通过将晶片结合到衬底或通过沉积来施加。

公开(公告)号：US20130334494A1

公开(公告)日：2013-12-19

申请号：US13973615

申请日：2013-08-22

Applicant: Sony Corporation

Inventor： Atsushi Toda

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  B82Y20/00 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14694 ,  H01L27/14696 ,  H01L31/035236

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract translation: 固态成像装置包括第一电极，与第一电极相对设置的第二电极和设置在第一电极和第二电极之间并且窄间隙半导体量子点分散在第一电极中的光电转换层 导电层，其中第一电极和第二电极的一个电极由透明电极形成，另一个电极由金属电极或透明电极形成。

公开(公告)号：USRE43948E1

公开(公告)日：2013-01-29

申请号：US12978401

申请日：2003-10-23

Applicant: Kimmo Puhakka ,  Ian Benson

Inventor： Kimmo Puhakka ,  Ian Benson

IPC: H01L21/00 ,  H01L21/82 ,  H01L21/44

CPC classification number: H01L31/0224 ,  H01L27/14661 ,  H01L27/14676 ,  H01L27/14696

Abstract: Embodiments of the invention are concerned with a method of manufacturing a radiation detector having one or more conductive contacts on a semiconductor substrate, and comprise the steps of: applying a first conductive layer to a first surface of the semiconductor substrate; applying a second conductive layer to form a plurality of contiguous layers of conductive materials, said plurality of contiguous layers including said first conductive layer; and selectively removing parts of said plurality of contiguous layers so as to form said conductive contacts, the conductive contacts defining one or more radiation detector cells in the semiconductor substrate.

Abstract translation: 本发明的实施例涉及制造在半导体衬底上具有一个或多个导电触点的放射线检测器的方法，并且包括以下步骤：将第一导电层施加到半导体衬底的第一表面; 施加第二导电层以形成多个连续的导电材料层，所述多个邻接层包括所述第一导电层; 并且选择性地去除所述多个邻接层的部分以形成所述导电接触，所述导电接触限定半导体衬底中的一个或多个辐射检测器单元。

公开(公告)号：US20120068295A1

公开(公告)日：2012-03-22

申请号：US13220340

申请日：2011-08-29

Applicant: Olivier Gravrand ,  Jacques Baylet

Inventor： Olivier Gravrand ,  Jacques Baylet

IPC: H01L31/102 ,  H01L31/18

CPC classification number: H01L31/11 ,  H01L27/14641 ,  H01L27/14652 ,  H01L27/14696 ,  H01L31/1832

Abstract: This bispectral detector comprises a plurality of unitary elements for detecting a first and a second electromagnetic radiation range, consisting of a stack of upper and lower semiconductor layers of a first conductivity type which are separated by an intermediate layer that forms a potential barrier between the upper and lower layers; and for each unitary detection element, two upper and lower semiconductor zones of a second conductivity type opposite to the first conductivity type, are arranged respectively so that they are in contact with the upper faces of the upper and lower layers so as to form PN junctions, the semiconductor zone being positioned, at least partially, in the bottom of an opening that passes through the upper and intermediate layers. The upper face of at least one of the upper and lower layers is entirely covered in a semiconductor layer of the second conductivity type. Cuts are made around each unitary detection element from the upper face of the stack and at least through the thickness of each semiconductor layer of the second conductivity type, entirely covering one or other of the upper and lower semiconductor layers of the first conductivity type, so as to form semiconductor zones of the second conductivity type.

Abstract translation: 该双谱检测器包括用于检测第一和第二电磁辐射范围的多个单一元件，该第一和第二电磁辐射范围由第一导电类型的上下半导体层的堆叠组成，第一导电类型的上和下半导体层由在中间层之间形成势垒的中间层分隔开 和下层; 并且对于每个单一检测元件，分别布置具有与第一导电类型相反的第二导电类型的两个上半导体区域和下半导体区域，使得它们与上层和下层的上表面接触，以形成PN结 至少部分地位于穿过上层和中层的开口的底部中的半导体区。 上层和下层中的至少一层的上表面被完全覆盖在第二导电类型的半导体层中。 从堆叠的上表面围绕每个单一检测元件进行切割，并且至少通过第二导电类型的每个半导体层的厚度，完全覆盖第一导电类型的上下半导体层中的一个或另一个，因此 以形成第二导电类型的半导体区。

公开(公告)号：US20120068225A1

公开(公告)日：2012-03-22

申请号：US13231262

申请日：2011-09-13

Applicant: Olivier GRAVRAND ,  Jacques Baylet

Inventor： Olivier GRAVRAND ,  Jacques Baylet

IPC: H01L31/0352

CPC classification number: H01L31/1832 ,  H01L27/14641 ,  H01L27/14652 ,  H01L27/14696 ,  H01L31/1013

Abstract: A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 1017 cm−3; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.

Abstract translation: 双谱探测器包括第一导电类型的上半导体层和下半导体层，以便吸收由形成屏障的中间层隔开的第一和第二电磁光谱; 第二导电类型的半导体区域注入上层和下层，并且每个至少部分地注入穿过上层和中间层的开口的底部; 以及连接到半导体区的导体元件。 至少通过上层的每个开口的那部分与半导体帽层分开，其中第二导电类型的掺杂剂的浓度大于1017cm-3; 并且其厚度选择为所述浓度的函数，使得其超过帽层中的少数载流子扩散长度。

公开(公告)号：US20100240164A1

公开(公告)日：2010-09-23

申请号：US12725042

申请日：2010-03-16

Applicant: Katsuhiro KOHDA ,  Naoharu KIYOTO

Inventor： Katsuhiro KOHDA ,  Naoharu KIYOTO

IPC: H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/14636 ,  H01L27/14659 ,  H01L27/14696

Abstract: A coating film is formed by applying, on a tentative support, a dispersion solution in which at least an inorganic semiconductor particle and a binder are dispersed. Then, a radiation photoconductive layer is formed by subjecting the coating film to thermal compression, and the radiation photoconductive layer is joined to an active matrix layer in which multiple switching elements are arranged. This allows the radiation photoconductive layer to generate a charge in response to radiation of an electromagnetic wave representing image information and to be arranged such that the charge is read out by the active matrix layer.

Abstract translation: 通过在暂时的载体上涂布至少分散有无机半导体颗粒和粘合剂的分散液形成涂膜。 然后，通过对涂膜进行热压缩而形成放射光电导层，并且将辐射光电导层接合到其中布置有多个开关元件的有源矩阵层。 这允许辐射光电导层响应于表示图像信息的电磁波的辐射而产生电荷，并且被布置为使得电荷被有源矩阵层读出。

公开(公告)号：US20090166544A1

公开(公告)日：2009-07-02

申请号：US12337104

申请日：2008-12-17

Applicant: Adrien Gasse ,  Marc Arques ,  Lydie Mathieu ,  Andrea Brambilla

Inventor： Adrien Gasse ,  Marc Arques ,  Lydie Mathieu ,  Andrea Brambilla

IPC: G01T1/16

CPC classification number: H01L27/14676 ,  H01L27/14696 ,  H01L31/0296 ,  H01L31/085

Abstract: This device for detecting electromagnetic radiation, in particular X-ray or γ-rays, includes: a sensing layer consisting of at least one material capable of interacting with said electromagnetic radiation to be detected, in order to liberate mobile charge carriers, whereof the movement generates an electric current; a substrate provided with a plurality of elementary collectors of the charge carriers thus liberated, said elementary collectors being distributed discretely; a transfer layer suitable for transferring the charge carriers liberated by the sensing layer at the elementary collectors, said layer being connected to the sensing layer; and an insulating adhesive mating layer, suitable for mating the plurality of elementary collectors and the transfer layer.

Abstract translation: 用于检测电磁辐射的装置，特别是X射线或γ射线的装置包括：感测层，由至少一种能够与待检测的所述电磁辐射相互作用的材料组成，以便释放移动电荷载体， 产生电流; 衬底，其设置有如此释放的电荷载体的多个基本集电极，所述基本集电极分散分布; 转移层，其适于转移在基本收集器处由感测层释放的电荷载体，所述层连接到感测层; 以及绝缘粘合剂配合层，适合于配合多个基本收集器和转移层。