公开(公告)号：US20200152513A1

公开(公告)日：2020-05-14

申请号：US16745769

申请日：2020-01-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Liang CHENG ,  Ziwei FANG

IPC: H01L21/768 ,  H01L21/311

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive feature over a semiconductor substrate. The method includes forming an oxygen-absorbing layer on a surface of the first conductive feature. The oxygen-absorbing layer absorbs oxygen from the first conductive feature and becomes an oxygen-containing layer. The method includes removing the oxygen-containing layer to expose the surface originally covered by the oxygen-containing layer. The method includes forming a metal-containing layer on the surface. The method includes forming a second conductive feature on the metal-containing layer.

公开(公告)号：US20160332277A1

公开(公告)日：2016-11-17

申请号：US15221187

申请日：2016-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Liang CHENG ,  Yen-Yu CHEN ,  Chang-Sheng LEE ,  Wei ZHANG

IPC: B24B37/013 ,  B24B49/12 ,  H01L29/78 ,  H01L21/66 ,  H01L29/66 ,  H01L21/3105

CPC classification number: B24B37/013 ,  B24B49/12 ,  H01L21/28088 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/67075 ,  H01L22/12 ,  H01L22/26 ,  H01L29/66545 ,  H01L29/7851

Abstract: A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer.

Abstract translation: 化学机械平面化（CMP）系统包括压板，衬垫，抛光头，旋转机构，光源和检测器。 垫板设置在压板上。 抛光头构造成将晶片保持在衬垫上。 旋转机构构造成旋转压板和抛光头中的至少一个。 光源被配置为向晶片上的端点层提供入射光。 检测器被配置为检测端点层对入射光的吸收。

公开(公告)号：US20150348856A1

公开(公告)日：2015-12-03

申请号：US14292162

申请日：2014-05-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Liang CHENG ,  Yen-Yu CHEN ,  Chang-Sheng LEE ,  Wei ZHANG

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/306

CPC classification number: B24B37/013 ,  B24B49/12 ,  H01L21/28088 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/67075 ,  H01L22/12 ,  H01L22/26 ,  H01L29/66545 ,  H01L29/7851

Abstract: A planarization method is provided. The planarization method includes providing a wafer, in which the wafer includes a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer, performing a chemical-mechanical planarization (CMP) process on the planarization layer, providing an incident light to a surface of the wafer under the CMP process, detecting absorption of the incident light by the surface layer; and stopping the CMP process in response to an increase in the detected absorption of the incident light.

Abstract translation: 提供了一种平面化方法。 平面化方法包括提供晶片，其中晶片包括功函数层，形成在功函数层上并从功函数层氧化的表面层，以及设置在表层上或表面层上的平坦化层，执行化学 在平坦化层上的机械平面化（CMP）工艺，在CMP工艺下向晶片的表面提供入射光，检测由表面层吸收的入射光; 并且响应于检测到的入射光的吸收的增加而停止CMP处理。