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    Quantum dot device and electronic device
    83.
    发明授权
    Quantum dot device and electronic device 有权

    公开(公告)号：US10446781B2

    公开(公告)日：2019-10-15

    申请号：US16001227

    申请日：2018-06-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hongkyu Seo ,  Eun Joo Jang ,  Dae Young Chung ,  Tae-Ho Kim ,  Sang Jin Lee

    IPC: H01L29/08 ,  H01L51/50 ,  H01L51/52 ,  B82Y20/00 ,  B82Y30/00

    Abstract: A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.

    SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME
    85.
    发明申请
    SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190153317A1

    公开(公告)日：2019-05-23

    申请号：US16196117

    申请日：2018-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

    IPC: C09K11/88 ,  C09K11/56

    Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

    Processes for synthesizing nanocrystals
    86.
    发明授权
    Processes for synthesizing nanocrystals 有权

    公开(公告)号：US10160649B2

    公开(公告)日：2018-12-25

    申请号：US14909235

    申请日：2014-07-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyo Sook Jang ,  Shin Ae Jun ,  Eun Joo Jang

    IPC: C09K11/00 ,  C09K11/08 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  B82Y30/00

    Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy   [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.

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