公开(公告)号：US12189170B2

公开(公告)日：2025-01-07

申请号：US17576895

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Eun Joo Jang ,  Shin Ae Jun ,  Hyun A Kang ,  Yongwook Kim ,  Na Youn Won ,  Hyo Sook Jang

IPC: F21V8/00 ,  G02F1/1335 ,  G02F1/13357

Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65

公开(公告)号：US11739263B2

公开(公告)日：2023-08-29

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/08 ,  C09K11/56 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/0805 ,  C09K11/562 ,  C09K11/88 ,  G02B6/005 ,  G02F1/133617 ,  H01L27/322 ,  H01L27/3244 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US11713418B2

公开(公告)日：2023-08-01

申请号：US17558774

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Hwea Yoon Kim ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C01G9/00 ,  H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K102/00

CPC classification number: C09K11/883 ,  C01G9/006 ,  C09K11/025 ,  H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/60 ,  H10K50/115 ,  H10K2102/00

Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

公开(公告)号：US11706936B2

公开(公告)日：2023-07-18

申请号：US18048484

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Moon Gyu Han ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/88 ,  H10K71/00 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: H10K50/115 ,  C09K11/02 ,  C09K11/883 ,  H10K71/00 ,  B82Y20/00 ,  B82Y40/00

Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

公开(公告)号：US11611054B2

公开(公告)日：2023-03-21

申请号：US17199977

申请日：2021-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae Lee ,  Moon Gyu Han ,  Won Sik Yoon ,  Eun Joo Jang ,  Dae Young Chung ,  Tae Hyung Kim ,  Hyo Sook Jang

IPC: H01L51/50

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.

公开(公告)号：US20220302402A1

公开(公告)日：2022-09-22

申请号：US17696956

申请日：2022-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Sohn ,  Eun Joo Jang ,  Tae Hyung Kim ,  Hyo Sook Jang

IPC: H01L51/50

Abstract: An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

公开(公告)号：US11316079B2

公开(公告)日：2022-04-26

申请号：US16546439

申请日：2019-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Jihyun Min ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/50 ,  C09K11/88 ,  H01L31/0232 ,  H01L31/0384 ,  H01L31/055 ,  H01L21/02 ,  C09K11/02 ,  C09K11/70 ,  H01L31/105 ,  H01L33/08 ,  F21V8/00 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/06 ,  G02F1/1335

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

公开(公告)号：US10782611B2

公开(公告)日：2020-09-22

申请号：US15900519

申请日：2018-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon Yang ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun

IPC: G03F7/028 ,  G02B5/20 ,  G03F7/004 ,  C09K11/70 ,  C09K11/77 ,  C08F220/06 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/031 ,  G02F1/13357 ,  C09K11/02 ,  C09D4/00 ,  C08K3/30 ,  C08K3/32 ,  C08K9/10 ,  B82Y40/00 ,  B82Y20/00

Abstract: A photosensitive composition, a quantum dot polymer composite pattern prepared therefrom, and a layered structure and an electronic device including the same. The photosensitive composition includes plurality of quantum dots; a luminescent material other than a quantum dot; a carboxylic acid group containing binder; a photopolymerizable monomer having a carbon-carbon double bond; and a photoinitiator, and the luminescent material comprises a fluorophore, a nanosized inorganic phosphor, or a combination thereof.

公开(公告)号：US10723942B2

公开(公告)日：2020-07-28

申请号：US15387107

申请日：2016-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae Jun ,  Taekhoon Kim ,  Garam Park ,  Yong Seok Han ,  Eun Joo Jang ,  Hyo Sook Jang ,  Tae Won Jeong ,  Shang Hyeun Park

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/70 ,  C08K3/30 ,  C08K3/32 ,  H01L51/50 ,  G02F1/1335 ,  G02F1/13357 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US10711193B2

公开(公告)日：2020-07-14

申请号：US16205323

申请日：2018-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwook Kim ,  Sungwoo Hwang ,  Soo Kyung Kwon ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  H01L27/32 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/133

Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.