公开(公告)号：US11758746B2

公开(公告)日：2023-09-12

申请号：US17892564

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Park ,  Yuho Won ,  Eun Joo Jang ,  Dae Young Chung ,  Sung Woo Kim ,  Jin A Kim ,  Yong Seok Han

IPC: H01L51/50 ,  H10K50/115 ,  H10K50/15 ,  H10K85/10 ,  H10K50/16 ,  H10K71/15 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/15 ,  H10K85/115 ,  H10K85/1135 ,  H10K50/16 ,  H10K71/15 ,  H10K2102/331 ,  H10K2102/351

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

公开(公告)号：US10723942B2

公开(公告)日：2020-07-28

申请号：US15387107

申请日：2016-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae Jun ,  Taekhoon Kim ,  Garam Park ,  Yong Seok Han ,  Eun Joo Jang ,  Hyo Sook Jang ,  Tae Won Jeong ,  Shang Hyeun Park

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/70 ,  C08K3/30 ,  C08K3/32 ,  H01L51/50 ,  G02F1/1335 ,  G02F1/13357 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US09904109B2

公开(公告)日：2018-02-27

申请号：US15206718

申请日：2016-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Nayoun Won ,  Hyun A Kang ,  Ha Il Kwon ,  Shang Hyeun Park ,  Eun Joo Jang ,  Shin Ae Jun ,  Deukseok Chung ,  Tae Won Jeong

IPC: G02B5/20 ,  G02F1/1335 ,  G03F7/00

CPC classification number: G02F1/133617 ,  G02B5/201 ,  G02B5/207 ,  G02F1/133504 ,  G02F1/133514 ,  G02F1/133615 ,  G02F1/133621 ,  G02F2001/133614 ,  G02F2202/36 ,  G03F7/0007

Abstract: A color filter including a first region configured to emit a first light, a second region configured to emit a second light having a longer wavelength than a wavelength of the first light, a third region configured to emit a third light having a longer wavelength than the wavelength of the second light, a first layer including two or more quantum dots, and a second layer formed on at least one surface of the first layer, wherein the first layer and the second layer are disposed in at least the second region and the third region.

公开(公告)号：US11845888B2

公开(公告)日：2023-12-19

申请号：US17989035

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

CPC classification number: C09K11/0883 ,  C08L57/10 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C08L2203/20 ,  G02F1/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11796911B2

公开(公告)日：2023-10-24

申请号：US17204110

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd.

Inventor： Shin Ae Jun ,  Shang Hyeun Park ,  Hojeong Paek ,  Jonggi Kim ,  Hyeyeon Yang ,  Eun Joo Jang ,  Yong Seok Han

IPC: G03F7/00 ,  G03F7/033 ,  G02B5/20 ,  G02B5/22 ,  C09K11/02 ,  C09K11/08

CPC classification number: G03F7/0007 ,  C09K11/02 ,  C09K11/08 ,  G02B5/207 ,  G02B5/223 ,  G03F7/033

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

公开(公告)号：US11661547B2

公开(公告)日：2023-05-30

申请号：US16883989

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Shin Ae Jun ,  Taekhoon Kim ,  Garam Park ,  Yong Seok Han ,  Eun Joo Jang ,  Hyo Sook Jang ,  Tae Won Jeong ,  Shang Hyeun Park

IPC: C09K11/62 ,  C09K11/70 ,  C09K11/08 ,  C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  C08K3/32 ,  C08K3/30 ,  G02F1/1335 ,  G02F1/13357 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/025 ,  C08K3/30 ,  C08K3/32 ,  C09K11/703 ,  C09K11/883 ,  G02F1/133516 ,  G02F1/133617 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08K2201/001 ,  G02F2202/36 ,  Y10S977/774 ,  Y10S977/896 ,  Y10S977/95

Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.

公开(公告)号：US11563143B2

公开(公告)日：2023-01-24

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C09K11/88 ,  C01B19/04

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US11867988B2

公开(公告)日：2024-01-09

申请号：US17409153

申请日：2021-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd ,  SAMSUNG SDI CO., LTD.

Inventor： Deukseok Chung ,  Shin Ae Jun ,  Tae Won Jeong ,  Yong Seok Han

IPC: G02F1/017 ,  G02F1/1362 ,  G02F1/1335 ,  G02F1/13357 ,  G03F7/00 ,  G03F7/033 ,  G03F7/004 ,  C09K11/62 ,  C09K11/70 ,  C09K11/02 ,  B32B37/06 ,  H01L31/0352

CPC classification number: G02F1/017 ,  C09K11/025 ,  C09K11/623 ,  C09K11/70 ,  G02F1/133533 ,  G02F1/133617 ,  G02F1/136286 ,  G03F7/0007 ,  G03F7/0047 ,  G03F7/033 ,  B32B37/06 ,  B32B2457/20 ,  B32B2457/202 ,  B32B2457/206 ,  C09K2323/00 ,  C09K2323/03 ,  G02F1/01791 ,  G02F2201/50 ,  H01L31/035209 ,  H01L31/035218

Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.

公开(公告)号：US11499098B2

公开(公告)日：2022-11-15

申请号：US17007179

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  H01L51/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11142685B2

公开(公告)日：2021-10-12

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: H01L51/50 ,  C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.