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    Semiconductor device and method of fabricating the same
    1.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US12144167B2

    公开(公告)日：2024-11-12

    申请号：US17821331

    申请日：2022-08-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin A Kim ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

    IPC: H10B12/00 ,  H01L21/66

    Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

    Quantum dot device and quantum dots
    2.
    发明授权
    Quantum dot device and quantum dots 有权

    公开(公告)号：US12041802B2

    公开(公告)日：2024-07-16

    申请号：US18101603

    申请日：2023-01-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

    IPC: H10K50/115

    CPC classification number: H10K50/115

    Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

    SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME
    5.
    发明申请
    SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190153317A1

    公开(公告)日：2019-05-23

    申请号：US16196117

    申请日：2018-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

    IPC: C09K11/88 ,  C09K11/56

    Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

    Semiconductor device and method for fabricating the same
    6.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US10204910B2

    公开(公告)日：2019-02-12

    申请号：US15722085

    申请日：2017-10-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin A Kim ,  Sun Young Lee ,  Ji Young Kim ,  Chang Hyun Cho

    IPC: H01L27/108 ,  H01L29/94 ,  H01L21/762 ,  H01L29/423

    Abstract: A semiconductor device is provided. The provided semiconductor device may have enhanced reliability and operating characteristics. The semiconductor device includes a substrate, a device isolation film formed within the substrate, a first gate structure formed within the substrate, a recess formed on at least one side of the first gate structure and within the substrate and the device isolation film, the recess comprising an upper portion and a lower portion wherein the lower portion of the recess is formed within the substrate and the upper portion of the recess is formed across the substrate and the device isolation film, a buried contact filling the recess and an information storage electrically connected to the buried contact.

    Semiconductor device and method of fabricating the same
    10.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US10804277B2

    公开(公告)日：2020-10-13

    申请号：US15718737

    申请日：2017-09-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin A Kim ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

    IPC: H01L27/108 ,  H01L21/66

    Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

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