公开(公告)号：US09281070B2

公开(公告)日：2016-03-08

申请号：US14644247

申请日：2015-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wan Nam ,  Won-Taeck Jung ,  Junghoon Park

IPC: G11C16/16 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  H01L27/115 ,  G11C16/34

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.

公开(公告)号：US09230659B2

公开(公告)日：2016-01-05

申请号：US14223368

申请日：2014-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoon-Hee Choi ,  Sang-Wan Nam

IPC: G11C5/14 ,  G11C16/10 ,  G11C16/04 ,  G11C16/34 ,  G11C16/24

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459

Abstract: A method of programming a memory cell of a nonvolatile memory device by executing a plurality of program loops comprises detecting whether a loop count or a level of a program pulse to be applied to the memory cell is within a specific range, wherein the specific range is an operation section in which a level of a current peak flowing into the bitline increases up to a reference value or more, charging a bitline of the memory cell at a first charging speed or a second charging speed slower than the first charging speed according to a result of the detection, and applying the program pulse to a wordline of the memory cell.

Abstract translation: 通过执行多个程序循环来对非易失性存储器件的存储单元进行编程的方法包括检测要应用于存储单元的循环计数或编程脉冲的电平是否在特定范围内，其中特定范围为 其中流入位线的电流峰值的电平增加到参考值或更大的操作部分，根据第一充电速度以比第一充电速度慢的第一充电速度或第二充电速度对存储器单元的位线进行充电 检测结果，并将编程脉冲施加到存储单元的字线。

公开(公告)号：US09208886B2

公开(公告)日：2015-12-08

申请号：US14197723

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan Nam ,  Kuihan Ko ,  Yang-Lo Ahn ,  Kitae Park

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/08 ,  G11C16/34 ,  G11C7/04

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。

公开(公告)号：US09183939B2

公开(公告)日：2015-11-10

申请号：US14242332

申请日：2014-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wan Nam ,  Kitae Park ,  Hyun-Wook Park ,  Jae-Kyun Rhee

IPC: G11C16/06 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34

CPC classification number: G11C16/26 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3427

Abstract: A method of reading a nonvolatile memory device including: applying a read voltage to a selected wordline of the nonvolatile memory device; applying a read pass voltage to unselected wordlines of the nonvolatile memory device; sensing a state of a memory cell connected to the selected wordline; and applying the read pass voltage to the selected wordline after the sensing.

Abstract translation: 一种读取非易失性存储器件的方法，包括：将读取电压施加到非易失性存储器件的选定字线; 对非易失性存储器件的未选字线施加读通过电压; 感测连接到所选字线的存储单元的状态; 并且在感测之后将读通道电压施加到所选择的字线。

公开(公告)号：US09142313B2

公开(公告)日：2015-09-22

申请号：US14060633

申请日：2013-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Won Shim ,  Sang-Wan Nam ,  Kitae Park

IPC: G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3427 ,  G11C16/3459

Abstract: A program method of a nonvolatile memory device is provided, which includes programming a memory cell in one string selected from a plurality of vertical strings; determining whether a mode of operation of the nonvolatile memory device is a pre-pulse mode; when the mode of operation is determined to be the pre-pulse mode, applying a pre-pulse having a predetermined level to a string selection line connected with a gate of a string selection transistor of at least one unselected vertical string of the plurality of vertical strings for a particular time period; and performing a verification operation on the programmed memory cell.

Abstract translation: 提供了一种非易失性存储器件的编程方法，其包括以多个垂直字符串中选择的一个串中的存储器单元进行编程; 确定所述非易失存储器件的工作模式是否是预脉冲模式; 当操作模式被确定为预脉冲模式时，将具有预定电平的预脉冲施加到与多个垂直线中的至少一个未选择垂直弦的串选择晶体管的栅极连接的串选择线 特定时间段的字符串; 以及对所编程的存储单元执行验证操作。