Method for Manufacturing Semiconductor Device
    84.
    发明申请
    Method for Manufacturing Semiconductor Device 失效
    半导体器件制造方法

    公开(公告)号:US20090246947A1

    公开(公告)日:2009-10-01

    申请号:US12147157

    申请日:2008-06-26

    Applicant: Seung Hyun Lee

    Inventor: Seung Hyun Lee

    Abstract: Disclosed herein is a method of manufacturing a semiconductor device that includes forming a metal catalytic pattern on a semiconductor substrate; etching the semiconductor substrate using the metal catalytic pattern as an etching mask to form a recess; forming an insulating layer over a structure including the recess, the metal catalytic pattern, and the semiconductor substrate; patterning the insulating layer to cross over the metal catalytic pattern and to expose a predetermined portion of the metal catalytic pattern; and growing a nano wire using the exposed predetermined portion of the metal catalytic pattern.

    Abstract translation: 本文公开了一种制造半导体器件的方法,其包括在半导体衬底上形成金属催化剂图案; 使用金属催化剂图案作为蚀刻掩模蚀刻半导体衬底以形成凹部; 在包括所述凹部,所述金属催化剂图案和所述半导体衬底的结构上形成绝缘层; 图案化所述绝缘层以越过所述金属催化剂图案并暴露所述金属催化剂图案的预定部分; 并使用暴露的金属催化剂图案的预定部分生长纳米线。

    Nonvolatile memory device and method of fabricating the same
    87.
    发明申请
    Nonvolatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号:US20060186462A1

    公开(公告)日:2006-08-24

    申请号:US11357329

    申请日:2006-02-21

    CPC classification number: H01L29/42324 H01L29/513 H01L29/792

    Abstract: Provided are example embodiments of fabrication methods and resulting structures suitable for use in nonvolatile memory devices formed on semiconductor substrates. The example embodiments of the gate structures include a first insulating film formed on the semiconductor substrate, a storage node formed on the first insulating film for storing charges, a second insulating film formed on the storage node, a third insulating film formed on the second insulating film, and a gate electrode formed on the third insulating film. The insulating films are selected whereby the dielectric constant of one or both of the second and third insulating films is greater than the dielectric constant of the first insulating film.

    Abstract translation: 提供了适用于形成在半导体衬底上的非易失性存储器件中的制造方法和结果结构的示例性实施例。 栅极结构的示例实施例包括形成在半导体衬底上的第一绝缘膜,形成在用于存储电荷的第一绝缘膜上的存储节点,形成在存储节点上的第二绝缘膜,形成在第二绝缘层上的第三绝缘膜 膜和形成在第三绝缘膜上的栅电极。 选择绝缘膜,由此第二和第三绝缘膜中的一个或两个的介电常数大于第一绝缘膜的介电常数。

    Content player
    88.
    发明授权

    公开(公告)号:US10599304B2

    公开(公告)日:2020-03-24

    申请号:US14117891

    申请日:2012-04-10

    Abstract: The present invention provides a content player allowing a user to select content to view using a viewing history of content viewed by another user. The content player performs a content playing process in response to a user instruction. The content player acquires viewing history information about content viewed by a related user related to the user with a content player different from the content player. The content player presents, to the user, the acquired viewing history information. The content player performs, if the user selects the presented viewing history information, a playing process of content indicated by the selected viewing history information.

    System and method for inexsufflating a subject
    89.
    发明授权
    System and method for inexsufflating a subject 有权
    用于排除主题的系统和方法

    公开(公告)号:US09320863B2

    公开(公告)日:2016-04-26

    申请号:US13994324

    申请日:2011-12-16

    Abstract: A system for controlling machine-induced expiratory airflow of a subject, the subject having an airway, the system comprising: a pressure generator (140) configured to generate a pressurized flow of breathable gas for delivery to the airway of the subject; and one or more processors (110) configured to execute computer program modules, the computer program modules comprising: a control module (170) configured to control the pressure generator a metric determination module (154) configured to determine a value of a flow metric during expiration by the subject, a flow analysis module (156) configured to compare the determined value of the flow metric with a target level of the flow metric; and an adjustment module (160) configured to adjust one or more of exsufflation pressure.

    Abstract translation: 一种用于控制受试者的机器呼气气流的系统,所述受试者具有气道,所述系统包括:压力发生器(140),其被配置为产生加压气流,用于输送到所述对象的气道; 以及被配置为执行计算机程序模块的一个或多个处理器(110),所述计算机程序模块包括:控制模块(170),被配置为控制压力发生器,度量确定模块(154),其被配置为在 流程分析模块(156),被配置为将所确定的流量度量值与所述流量度量的目标水平进行比较; 以及调整模块(160),其被配置为调节一个或多个排气压力。

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