公开(公告)号：US20230072716A1

公开(公告)日：2023-03-09

申请号：US17897222

申请日：2022-08-29

Applicant: KCTECH CO., LTD.

Inventor： Jung Hun KIM ,  Jeong Gyu LEE ,  Hyo Jun JANG

IPC: C09K3/14 ,  C09G1/02

Abstract: The present disclosure relates to cerium oxide abrasive particles and a polishing slurry composition, and more particularly, to cerium oxide abrasive particles comprising: an element cerium; and a modifier and satisfying the agglomeration ratios calculated from the relational expressions of the primary particle sizes and the secondary particle sizes, and a polishing slurry composition comprising the same.

公开(公告)号：US20220305611A1

公开(公告)日：2022-09-29

申请号：US17697891

申请日：2022-03-17

Applicant: KCTECH CO., LTD.

Inventor： Hee Cheul JUNG ,  Geun Sik YUN ,  Hyung Seob SHIM ,  Sung Ho SHIN

IPC: B24B37/015 ,  B24B37/20 ,  B24B57/02 ,  B24B55/03

Abstract: A substrate polishing method for polishing a substrate through a polishing pad according to an embodiment may comprise: a preheating step of increasing the temperature of the polishing pad by supplying heated pure water to the polishing pad before polishing the substrate; and a temperature control step of controlling the temperature of the polishing pad by adjusting the temperature of the slurry supplied to the polishing pad in a polishing process of the substrate.

公开(公告)号：US20220277963A1

公开(公告)日：2022-09-01

申请号：US17575913

申请日：2022-01-14

Applicant: KCTech Co., Ltd.

Inventor： Hee Sung Chae ,  Seung Eun Lee ,  Geun Sik Yun

IPC: H01L21/306 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: A substrate polishing system may include a substrate transfer unit comprising a shaft to rotate on a rotation axis perpendicular to a ground and at least one transfer arm to support a bottom surface of a substrate and transfer the substrate while forming a transfer orbit by rotation of the shaft, and at least one carrier to perform polishing the substrate transferred by the substrate transfer unit.

公开(公告)号：US20220274228A1

公开(公告)日：2022-09-01

申请号：US17579189

申请日：2022-01-19

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung CHAE ,  Seung Eun LEE ,  Geun Sik YUN

IPC: B24B37/10 ,  B24B37/30 ,  B24B37/34 ,  B24B57/02

Abstract: A substrate polishing system may include a substrate transfer unit to support a bottom surface of a substrate and transfer the substrate while forming a transfer orbit in a circle by a rotational motion, at least one carrier to perform polishing on the substrate received from the substrate transfer unit, and a loader to load the substrate which is seated on the substrate transfer unit to the carrier or unload a substrate placed on the carrier to the substrate transfer unit.

公开(公告)号：US11407081B2

公开(公告)日：2022-08-09

申请号：US16416736

申请日：2019-05-20

Applicant: KCTECH CO., LTD.

Inventor： Jong-Tae Joo ,  Sang Hyun Kim ,  Ho Cheon Jeong ,  Jae Yeol Kim

IPC: B24B37/005 ,  B24B37/30

Abstract: The present invention relates to a substrate polishing system comprising a polishing pad covered on the polishing platen; a plurality of substrate carriers including a first substrate carrier which moves in a state in which a substrate is mounted and performs a polishing process in a state in which the substrate is in contact with the polishing pad on the polishing pad; a monitoring unit of displaying the information including the identity, position of at least one of the substrate carriers; and a control unit of outputting a warning signal and/or changes the operation of operating devices when an error occurs in real time thereby improving the monitoring efficiency and operation reliability of the polishing process of the substrate.

公开(公告)号：US20220111486A1

公开(公告)日：2022-04-14

申请号：US17495818

申请日：2021-10-07

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung CHAE ,  Seung Eun LEE ,  Geun Sik YUN

IPC: B24B37/34 ,  B24B37/04 ,  B08B13/00 ,  B08B3/02

Abstract: A substrate processing system includes a front-end module, a first processing line including a first polishing line and a first cleaning line, a second processing line including a second polishing line and a second cleaning line and disposed in parallel to the first processing line, a first stage disposed between the first cleaning line and the second cleaning line, a first retransfer robot configured to transfer a substrate from the front-end module to the first stage, a second stage disposed between the first polishing line and the second polishing line, and a second retransfer robot configured to transfer the substrate between at least two locations of the first cleaning line, the second cleaning line, the first stage, and the second stage.

公开(公告)号：US20220111485A1

公开(公告)日：2022-04-14

申请号：US17495816

申请日：2021-10-07

Applicant: KCTECH CO., LTD.

Inventor： Hee Sung CHAE ,  Seung Eun LEE ,  Geun Sik YUN

IPC: B24B37/34 ,  B24B37/10 ,  B24B41/00 ,  B24B27/00

Abstract: A substrate processing system includes a front-end module, a first processing line including a first polishing line and a first cleaning line, a second processing line including a second polishing line and a second cleaning line and disposed in parallel to the first processing line, a first stage disposed between the first processing line and the second processing line, and a first retransfer robot configured to transfer a substrate from the front-end module to the first stage.

公开(公告)号：US20210380842A1

公开(公告)日：2021-12-09

申请号：US17293236

申请日：2019-05-29

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Soo Wan CHOI ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4≤log(milling energy)

公开(公告)号：US20210269675A1

公开(公告)日：2021-09-02

申请号：US17184620

申请日：2021-02-25

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  In Seol HWANG

IPC: C09G1/02 ,  C09K13/00 ,  C09K13/04

Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition for CMP includes abrasive particles, an oxidizer, and a carbon polishing inhibitor.

公开(公告)号：US20210189178A1

公开(公告)日：2021-06-24

申请号：US17123115

申请日：2020-12-16

Applicant: KCTECH CO., LTD.

Inventor： Gi Joo SHIN ,  Jung Yoon KIM ,  Kwang Soo PARK ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.