公开(公告)号：US20180355213A1

公开(公告)日：2018-12-13

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo KONG ,  Jung Hun KIM ,  Sang Mi LEE ,  Woo In LEE ,  Hee Sook CHEON ,  Sang Kyun KIM ,  Hao CUI ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/28 ,  H01L27/108 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

公开(公告)号：US20240158667A1

公开(公告)日：2024-05-16

申请号：US18281558

申请日：2022-03-07

Applicant: KCTECH CO., LTD.

Inventor： Jung Hun KIM ,  Jun Ha HWANG ,  O Seong KWON

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition and to a polishing slurry composition including nanoceria abrasive particles and a water-soluble compound including an intramolecular hydrophilic group, and further selectively including at least one from among an amphoteric compound including an intramolecular carboxyl group and amine group, a surface modifier including an organic acid, and a pH adjuster.

公开(公告)号：US20230072716A1

公开(公告)日：2023-03-09

申请号：US17897222

申请日：2022-08-29

Applicant: KCTECH CO., LTD.

Inventor： Jung Hun KIM ,  Jeong Gyu LEE ,  Hyo Jun JANG

IPC: C09K3/14 ,  C09G1/02

Abstract: The present disclosure relates to cerium oxide abrasive particles and a polishing slurry composition, and more particularly, to cerium oxide abrasive particles comprising: an element cerium; and a modifier and satisfying the agglomeration ratios calculated from the relational expressions of the primary particle sizes and the secondary particle sizes, and a polishing slurry composition comprising the same.