Abstract:
Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
Abstract:
An electron-beam irradiation apparatus includes an evacuatable filament-electron gun chamber housing a filament and an anode and having an inactive-gas inlet through which an inactive gas flows in; an evacuatable treatment chamber connected to an exhaust system; and a separation wall for separating the filament-electrode gun chamber and the treatment chamber. The separation wall has an aperture configured to pass electrons and gas therethrough from the filament-electron gun chamber.
Abstract:
An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.
Abstract:
An electron beam generator device includes a base body having a conductive surface and a electron-emission electrode having a carbon nanotube structure on the conductive surface of the substrate. The carbon nanotube structure constitutes a network structure which has plural carbon nanotubes and a crosslinked part including a chemical bond of plural functional groups. The chemical bond connects one end of one of the carbon nanotubes to another one of the carbon nanotubes. A method for producing an electron beam generator device, includes applying plural carbon nanotubes each having a functional group onto a conductive surface of a base body, and crosslinking the functional groups with a chemical bond to form a crosslinked part, thereby forming a carbon nanotube structure constituting a network structure having plural carbon nanotubes electrically connected to each other.
Abstract:
Disclosed is an electron beam apparatus and method which can retain the state that minimizes the amount of water content contained at a gap between a high-voltage cable and a high-voltage introduction insulator to thereby prevent creation of high-voltage discharge and current leakage. The apparatus comprises a means for applying a high voltage to an acceleration electrode while eliminating electron release from an electron source and for detecting a change in an emission current corresponding to a change in an acceleration voltage at this time. In addition, the apparatus comprises a means for issuing a cautionary notice or warning when the change of this emission current exceeds a prespecified value. Further, the apparatus comprises a means for letting a dry gas flow in a gap portion between the electron gun's high-voltage cable and the high-voltage introduction insulator to thereby dehumidify said gap portion. With such an arrangement, it is possible to prevent high-voltage discharge due to an increase in water content of the gap portion and also instability of an electron beam due to a leakage current.
Abstract:
An electron gun includes an electron emission cathode, a control electrode, and an extractor and the electron emission cathode is made of rare earth hexaboride. A tip of the electron emission cathode is located between the control electrode and the extractor, and the electron emission surface of the electron emission cathode is spherical or flat.
Abstract:
Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.
Abstract:
An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system. Specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber, an image processing analyzer 2015 for detecting defects on the substrate 2006, a vibration isolating mechanism for the testing chamber, a vacuum system for holding the testing chamber at a vacuum, and a control system 2017 for displaying or storing positions of defects on the substrate 2006.
Abstract:
An electron beam source includes a cathode having an electron emission surface including an active area for emission of electrons and a cathode shield assembly including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode, electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode may be a negative electron affinity photocathode formed on a light-transmissive substrate. The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode may be moved relative to the opening in the shield so as to align an new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.
Abstract:
A grounded metallic shield which comprises an electrode enclosing the filament leads and emitters of an e-Gun in a high vacuum chamber of the type used in melting and casting metals and other materials and evaporation sources. The shield is spaced from the filament leads and emitters a distance in the order of the electron mean free path for the pressure uses within the high vacuum chamber. The structure and method of use thereof suppresses or eliminates arc-downs or glow discharges.