公开(公告)号：US06359286B1

公开(公告)日：2002-03-19

申请号：US09462162

申请日：2000-03-09

Applicant: Hiroyuki Ito ,  Stephen Moffatt

Inventor： Hiroyuki Ito ,  Stephen Moffatt

IPC: G21K510

CPC classification number: H01J37/3171 ,  G21K1/14 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/006

Abstract: Space charge effects in an ion implanter can be caused by the mutual repulsion of ions of a particular polarity in a beam of ions which tend to cause the beam to “blow up” and become uncontrollable. This occurs for example in the ion implanter along the path of the ion beam and in particular at regions of external electric field. Introducing into the ion beam a second polarity of ions space charge neutralises the ion beam.

Abstract translation: 离子注入机中的空间电荷效应可以由离子束中特定极性的离子的相互排斥引起，这些离子束倾向于导致光束“爆炸”并变得不可控制。 这种情况发生在例如沿着离子束的路径的离子注入机中，特别是在外部电场的区域。 向离子束引入离子空间电荷的第二极性使离子束中和。

公开(公告)号：US06271529B1

公开(公告)日：2001-08-07

申请号：US09083707

申请日：1998-05-22

Applicant: Marvin Farley ,  Vadim G. Dudnikov ,  Mehran Nasser-Ghodsi

Inventor： Marvin Farley ,  Vadim G. Dudnikov ,  Mehran Nasser-Ghodsi

IPC: H01S100

CPC classification number: H01J37/026 ,  H01J37/063 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0042 ,  H01J2237/0044 ,  H01J2237/0045 ,  H05H1/54 ,  H05H3/02

Abstract: An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode. A drift tube defined by walls through which the ion beam passes before reaching the workpiece is opened into by the aperture opens into the tube. A series of parallel, linear magnets are positioned perpendicular to the general path of the ion beam. The adjacent poles of adjacent magnets are of opposite polarity.

Abstract translation: 提供离子注入机用于将离子注入到工件中。 离子注入机包括用于产生离子束并将其引导到工件的表面的装置和用于产生等离子体以中和离子束和工件表面的等离子体发生器的装置。 等离子体发生器具有由壁限定的等离子体发生器室，用于在室中产生的等离子体的相对较窄的出口孔，以离开室以中和来自阴极和阴极以及与阴极隔离的工件表面，阴极和阳极 房间。 等离子体发生器还具有布置在等离子体发生器室内的磁体，邻近室壁以产生磁场，以使从阴极发射的一次电子直接到达阳极。 等离子体发生器还具有导电屏蔽，其位于阳极和磁体之间的室内，屏蔽具有选择用于偏转电子的电位，磁场和导电屏蔽在操作期间有效以使来自阴极的电子延伸 在室内电离气体以在到达阳极之前产生等离子体的路径。 由到达工件的离子束通过的由壁限定的漂移管通过孔打开进入管中。 一系列平行的线性磁体垂直于离子束的通用路径定位。 相邻磁体的相邻磁极具有相反的极性。

公开(公告)号：US6080986A

公开(公告)日：2000-06-27

申请号：US94380

申请日：1998-06-09

Applicant: Mark Graeme Dowsett ,  Johann L. Maul

Inventor： Mark Graeme Dowsett ,  Johann L. Maul

IPC: G01N23/225 ,  G01N27/62 ,  G01Q20/02 ,  G01Q60/44 ,  H01J37/02 ,  H01J37/252 ,  H01J49/26

CPC classification number: G01N23/2258 ,  H01J37/026 ,  H01J37/252 ,  H01J2237/0042 ,  H01J2237/2527

Abstract: In a secondary ion mass spectrometer an aperture mask (3), which is not part of the secondary ion optics (5) of the spectrometer, is arranged very near to the surface of a specimen (1) to be analyzed, for example a semiconductor. The primary and secondary ions pass through the aperture (3A) in the aperture mask (3). The position of the specimen relative to the aperture mask dictates the location on the specimen (1) to be analyzed. The outer dimension of the mask is larger than the field of view of the secondary ion optics (5). Due to the masked region the fringe areas of the specimen are shielded ionoptically so that they cannot result in any falsification of the electric field. An electrical dc or ac potential can be applied to the mask (3) so that the electric field between the aperture (3A) and the specimen (1) can be additionally influenced. A contact device (3B) can be applied between the mask (3) and the specimen (1) for preventing electrical charging of the specimen (1).

Abstract translation: 在二次离子质谱仪中，不是光谱仪的二次离子光学器件（5）的一部分的孔径掩模（3）非常靠近待分析的样品（1）的表面，例如半导体 。 初级和次级离子通过孔径掩模（3）中的孔（3A）。 样本相对于孔径掩模的位置决定待分析样品（1）上的位置。 掩模的外部尺寸大于二次离子光学器件（5）的视场。 由于掩蔽区域，样品的边缘区域被电离屏蔽，从而不会导致电场的任何伪造。 可以对掩模（3）施加电气直流或交流电位，使得孔（3A）和样品（1）之间的电场可以额外地受到影响。 可以在掩模（3）和试样（1）之间施加接触装置（3B），以防止试样（1）的充电。

公开(公告)号：US6078045A

公开(公告)日：2000-06-20

申请号：US76936

申请日：1998-05-13

Applicant: Johann L. Maul ,  M. G. Dowsett

Inventor： Johann L. Maul ,  M. G. Dowsett

IPC: G01N23/225 ,  G01N27/62 ,  G01Q20/02 ,  G01Q60/44 ,  H01J37/02 ,  H01J37/252 ,  H01J49/26 ,  G01N23/00 ,  H01J49/00

CPC classification number: G01N23/2258 ,  H01J37/026 ,  H01J37/252 ,  H01J2237/0042 ,  H01J2237/2527

Abstract: In a secondary ion mass spectrometry (SIMS) method for analysis of a sample, in a first process step, the kinetic energy of the emitted primary ions emitted by a primary ion source (2) is set to a relatively low value, so that the surface of the sample (1) is enriched with primary ions, and erosion of the surface of the sample (1) essentially does not take place, and in a second process step, the kinetic energy of the primary ions emitted by one and the same primary ion source (2) is set to a relatively high value, so that the surface of the sample (1) can be eroded by the primary ion beam, where the formation of secondary ions in the second process step is promoted by the primary ions implanted during the first process step. Over and above this, targeted, locally differentiated enrichment of the sample surface ("chemical gating") can be carried out.

Abstract translation: 在用于分析样品的二次离子质谱（SIMS）方法中，在第一工艺步骤中，由主离子源（2）发射的发射的初级离子的动能被设定为相对较低的值， 样品（1）的表面富含初级离子，并且基本上不发生样品（1）的表面的侵蚀，并且在第二工艺步骤中，由一个离子发射的主要离子的动能 初级离子源（2）被设定为相对较高的值，使得样品（1）的表面可以被一次离子束侵蚀，其中第二工艺步骤中的二次离子的形成被初级离子促进 在第一工艺步骤期间植入。 除此之外，可以进行样品表面的目标，局部差异化富集（“化学浇注”）。

公开(公告)号：US5945681A

公开(公告)日：1999-08-31

申请号：US826421

申请日：1997-03-27

Applicant: Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya ,  Yasuo Yamashita ,  Kazuo Mera ,  Isao Hashimoto ,  Keiji Arimatsu

Inventor： Katsumi Tokiguchi ,  Takayoshi Seki ,  Kensuke Amemiya ,  Yasuo Yamashita ,  Kazuo Mera ,  Isao Hashimoto ,  Keiji Arimatsu

IPC: H01J37/20 ,  C23C14/48 ,  H01J37/02 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/026 ,  H01J37/3174 ,  H01J2237/0044

Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

公开(公告)号：US5903009A

公开(公告)日：1999-05-11

申请号：US929180

申请日：1997-09-08

Applicant: James D. Bernstein ,  Brian S. Freer ,  Peter L. Kellerman

Inventor： James D. Bernstein ,  Brian S. Freer ,  Peter L. Kellerman

IPC: C23C14/48 ,  H01J37/02 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041

Abstract: A plasma-enhanced electron shower (62) for an ion implantation system (10) is provided, including an extension tube (66) having a replaceable graphite inner liner (88). The inner liner is biased to a low negative potential (-6 V) to prevent low energy secondary electrons generated by the electron shower target from being shunted away from the wafer, keeping them available for wafer charge neutralization. The electrically biased inner surface is provided with serrations (126) comprising alternating wafer-facing surfaces (128) and target-facing surfaces (130). During operation of the electron shower (62), photoresist or other material which may sputter back from the wafer collects on the wafer-facing surfaces (128), rendering them non-conductive, while the target-facing surfaces (130) remain clean and therefore conductive. The conductive target-facing surfaces provide a shunt (low resistance) path to electrical ground for high energy electrons generated in the electron shower.

Abstract translation: 提供了一种用于离子注入系统（10）的等离子体增强型电子淋浴（62），其包括具有可更换石墨内衬（88）的延伸管（66）。 内衬被偏压到低负电位（-6V），以防止由电子淋浴靶产生的低能量二次电子被分流离开晶片，保持它们可用于晶片电荷中和。 电偏置的内表面设置有锯齿（126），其包括交替的面向晶片的表面（128）和面向对象的表面（130）。 在电子喷淋（62）的操作期间，可以从晶片反射的光致抗蚀剂或其它材料收集在面向晶片的表面（128）上，使得它们不导电，同时面向目标的表面（130）保持清洁， 因此导电。 面向导电目标的表面为电子地面提供了分流（低电阻）路径，用于在电子淋浴中产生的高能电子。

公开(公告)号：US5750987A

公开(公告)日：1998-05-12

申请号：US636974

申请日：1996-04-24

Applicant: Satoshi Ichimura ,  Tadashi Sato ,  Kenzo Kobayashi ,  Shotaro Ohishi ,  Hisao Oonuki

Inventor： Satoshi Ichimura ,  Tadashi Sato ,  Kenzo Kobayashi ,  Shotaro Ohishi ,  Hisao Oonuki

IPC: H05H1/46 ,  C23F4/00 ,  H01J27/16 ,  H01J27/18 ,  H01J37/02 ,  H01J37/08 ,  H01J37/30 ,  H01J37/305 ,  H01L21/302 ,  H01L21/3065 ,  H05H3/00

CPC classification number: H01J37/026 ,  H01J27/18 ,  H01J37/3053 ,  H01J2237/0041

Abstract: When neutralized plasma is generated, the cylindrical electrode 8 is set at a negative potential against the processing chamber 23 by the DC power source 18, so that ions 23 in the neutralized plasma can be collected at the cylindrical electrode 8. Electrons 24 equal to the collected ion charge can be supplied uniformly toward the ion beam 25. Therefore, by allowing the cylindrical electrode to collect ions, the ion collection area can be spread easily, and only by generating neutralized plasma of low density, a sufficient volume of ions can be collected surely from the plasma and a sufficient volume of electrons can be supplied to the ion beam 25 at the same time.

Abstract translation: 当产生中和的等离子体时，通过直流电源18将圆柱形电极8设置在处理室23的负电位，使得中和的等离子体中的离子23可以被收集在圆柱形电极8上。等于 收集的离子电荷可以均匀地供给到离子束25.因此，通过使圆柱形电极收集离子，离子收集区域可以容易地扩散，并且只有通过产生低密度的中和等离子体，可以有足够的离子体积 从等离子体中可靠地收集，并且可以同时向离子束25供应足够的体积的电子。

公开(公告)号：US5492862A

公开(公告)日：1996-02-20

申请号：US179309

申请日：1994-01-10

Applicant: Takahiro Misumi

Inventor： Takahiro Misumi

IPC: B25J21/00 ,  H01J37/02 ,  H01L21/265 ,  H01L21/677 ,  H05F3/04 ,  H01L21/26 ,  H05F3/06

CPC classification number: H05F3/04 ,  H01J37/026 ,  H01L21/67778 ,  H01J2237/0044 ,  H01J2237/31701 ,  Y10S414/139 ,  Y10S438/909

Abstract: A vacuum processing method including the steps of generating plasma of a charge neutralizing medium by plasma generating means in a vacuum process chamber, and supplying the charge neutralizing medium in the plasma state to an object during transportion in the vacuum process chamber, thereby neutralizing a charge on the object. With this method, the object can be smoothly transported in a vacuum atmosphere after treatment and adhesion of particles to the object is prevented.

Abstract translation: 一种真空处理方法，包括以下步骤：在真空处理室中通过等离子体产生装置产生电荷中和介质的等离子体，并且在真空处理室中输送期间将等离子体状态的电荷中和介质供给到物体，从而中和电荷 对象上 利用这种方法，可以在处理之后在真空气氛中平稳地输​​送物体，并防止颗粒附着在物体上。

公开(公告)号：US5466929A

公开(公告)日：1995-11-14

申请号：US20802

申请日：1993-02-22

Applicant: Katsuhiko Sakai ,  Osamu Nasu ,  Yoichi Ose

Inventor： Katsuhiko Sakai ,  Osamu Nasu ,  Yoichi Ose

IPC: H01J37/02 ,  H01J37/30 ,  H05H3/00

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/3175

Abstract: When a charged beam is irradiated on a sample, charge up of electric charge of the same polarity as that of the charged beam is built up on the sample surface. In order to neutralize the charge up electric charge, an apparatus for suppressing electrification of sample in charged beam irradiation apparatus is provided in which electric charge of opposite polarity to that of the charged beam is generated near the sample surface to neutralize the charged beam or charge up electric charge on the sample surface. The electric charge for neutralization is generated by admitting elecrtic charge from a plasma generation unit to the vicinity of the sample surface, ionizing gas generated from the sample surface by causing the charged beam to collide the gas or by irradiating electrons from an electron source on the sample surface. Especially when there is a possibility that impurities other than the electric charge for neutralization affect the sample adversely, an impurity generation source is blind folded with a cover so as not to be seen through from the sample and charged beam so that the impurities may be prevented from impinging upon the sample surface or intersecting the charged beam path.

Abstract translation: 当将带电束照射在样品上时，在样品表面上积累与带电束相同极性的电荷的充电。 为了中和充电电荷，提供了一种用于抑制带电束照射装置中的样品带电的装置，其中在样品表面附近产生与带电束的极性相反极性的电荷以中和充电的光束或电荷 样品表面上的电荷。 用于中和的电荷是通过将等离子体发生单元的电荷进入到样品表面附近而产生的，通过使带电的束撞击气体或通过在电子源上照射电子而从样品表面产生的电离电离 样品表面。 特别是当除了中和电荷以外的杂质有可能不利地影响样品时，杂质产生源被遮盖物盲目地折叠，从而不能从样品和带电束中透过，从而可以防止杂质 撞击在样品表面上或与带电光束相交。

公开(公告)号：US5329129A

公开(公告)日：1994-07-12

申请号：US849238

申请日：1992-03-10

Applicant: Kazuhiro Shono ,  Naomitsu Fujishita ,  Kazuhiko Noguchi ,  Takahisa Nagayama ,  Shigeo Sasaki

Inventor： Kazuhiro Shono ,  Naomitsu Fujishita ,  Kazuhiko Noguchi ,  Takahisa Nagayama ,  Shigeo Sasaki

IPC: H01J37/02 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0045

Abstract: There is disclosed an electron shower apparatus which eliminates the adverse effect of a magnetic field on electrons and which provides electrons in sufficient quantity when primary electrons having low energy are employed. In the apparatus, the magnetic field generated by a filament current is decreased or eliminated by pulsing the filament current or by passing a current opposite in direction to the filament current in the vicinity of the filament current.

Abstract translation: 公开了一种电子喷淋装置，其消除了磁场对电子的不利影响，并且当使用具有低能量的一次电子时，其提供足够量的电子。 在该装置中，由灯丝电流产生的磁场通过脉冲灯丝电流或通过在灯丝电流附近通过与灯丝电流相反的方向的电流来减小或消除。