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    Thin-film magnetic head having the length of the pinned and antiferromagnetic layers greater than the width dimension thereof and/or the length of the free layer
    73.
    发明授权
    Thin-film magnetic head having the length of the pinned and antiferromagnetic layers greater than the width dimension thereof and/or the length of the free layer 有权
    具有大于其宽度尺寸和/或自由层的长度的钉扎和反铁磁性层的长度的薄膜磁头

    公开(公告)号：US07190559B2

    公开(公告)日：2007-03-13

    申请号：US10652517

    申请日：2003-09-02

    Applicant: Takeo Kagami ,  Noriaki Kasahara

    Inventor： Takeo Kagami ,  Noriaki Kasahara

    IPC: G11B5/39

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/4806 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/3996

    Abstract: In the thin-film magnetic head of the present invention, the length of each of a pinned layer and an antiferromagnetic layer in their contact area in the depth direction from a surface facing a medium is longer than the length of a free layer in the same direction. When the length of the pinned layer in the depth direction is set longer as such, the direction of magnetization of the pinned layer can be restrained from being tilted by disturbances. Also, the pinned layer and the antiferromagnetic layer have the same length in their contact area in the MR height direction, so that the pinned layer is in contact with the antiferromagnetic layer throughout its length in the MR height direction, thus raising the exchange coupling force, whereby the inclination in the direction of magnetization can be suppressed more effectively.

    Abstract translation: 在本发明的薄膜磁头中，从面向介质的表面的深度方向的接触面积中的被钉扎层和反铁磁性层的长度比同一层的自由层的长度长 方向。 当钉扎层的深度方向的长度设定得更长时，可以抑制被钉扎层的磁化方向被扰动倾斜。 此外，钉扎层和反铁磁层在其MR高度方向上的接触面积上具有相同的长度，使得钉扎层在MR高度方向上的整个长度上与反铁磁层接触，从而提高交换耦合力 从而能够更有效地抑制磁化方向的倾斜。

    Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure
    74.
    发明授权
    Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure 有权
    具有反铁磁/铁磁交换耦合结构的垂直磁偏置的非凡磁阻传感器

    公开(公告)号：US07167346B2

    公开(公告)日：2007-01-23

    申请号：US10883204

    申请日：2004-06-30

    Applicant: Matthew J. Carey ,  Bruce A. Gurney ,  Stefan Maat ,  Neil Smith

    Inventor： Matthew J. Carey ,  Bruce A. Gurney ,  Stefan Maat ,  Neil Smith

    IPC: G11B5/33

    CPC classification number: G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/39 ,  G11B5/3993 ,  G11B2005/0008 ,  H01L43/08

    Abstract: An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.

    Abstract translation: 非常大的磁阻（EMR）传感器在EMR活性膜的顶部具有反铁磁/铁磁交换耦合双层结构。 双层结构中的铁磁层具有垂直的磁各向异性，并被反铁磁层交换偏置。 反铁磁/铁磁双层结构提供垂直于EMR有源膜的平面的磁场，以偏置EMR传感器的磁阻与场响应。 铁磁层可以由用于垂直磁记录的任何铁磁材料形成，并且以使其各向异性轴显着超出平面的方式制备。 反铁磁层由任何已知的Mn合金形成，例如PtMn，NiMn，FeMn，IrMn，PdMn，PtPdMn和RhMn，或任何绝缘反铁磁材料，例如基于氧化钴和氧化镍反铁磁材料的那些 。

    Dual spin valve sensor with a longitudinal bias stack
    75.
    发明授权
    Dual spin valve sensor with a longitudinal bias stack 失效
    具有纵向偏置叠层的双自旋阀传感器

    公开(公告)号：US07161771B2

    公开(公告)日：2007-01-09

    申请号：US10115825

    申请日：2002-04-02

    Applicant: Tsann Lin ,  Daniele Mauri

    Inventor： Tsann Lin ,  Daniele Mauri

    IPC: G11B5/39

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3935 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/0008

    Abstract: A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.

    Abstract translation: 双自旋阀（SV）传感器设置有夹在第一SV堆叠和第二SV堆叠之间的纵向偏置堆叠。 纵向偏置堆叠包括夹在第一和第二铁磁层之间的反铁磁（AFM）层。 第一和第二SV堆叠包括由具有比偏置堆叠的AFM材料更高的阻挡温度的AFM材料制成的AFM层钉住的反平行（AP） - 镀层，其允许AP钉扎层在横向上被钉扎， 偏置堆叠沿纵向方向固定。 两个AP钉扎层的去磁场彼此抵消，并且偏置堆叠为第一和第二SV堆叠的感测层提供磁通闭合。

    Method, medium, and apparatus controlling domain characteristics of a magneto-resistive sensor
    77.
    发明申请
    Method, medium, and apparatus controlling domain characteristics of a magneto-resistive sensor 审中-公开
    控制磁阻传感器的领域特性的方法，介质和装置

    公开(公告)号：US20060268464A1

    公开(公告)日：2006-11-30

    申请号：US11409057

    申请日：2006-04-24

    Applicant: Won-choul Yang

    Inventor： Won-choul Yang

    IPC: G11B5/33 ,  G11B5/127

    CPC classification number: G11B5/012 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/0008 ,  G11B2005/0016

    Abstract: A method, medium, and apparatus to control a domain characteristic of a magneto-resistive (MR) sensor, e.g., included in a head of an HDD. The method may include maintaining the head in a non-flying state, applying temperature suitable for demagnetizing the MR sensor by driving a heater installed in the head, and cooling the MR sensor while applying a magnetic field for magnetizing the MR sensor. Accordingly, annealing can be performed in a fully assembled HDD by obtaining temperature suitable for annealing the MR sensor using a heater installed inside a head.

    Abstract translation: 用于控制磁阻（MR）传感器的域特性的方法，介质和装置，例如包括在HDD的磁头中。 该方法可以包括将头部保持在非飞行状态，通过驱动安装在头部中的加热器来施加适合于使MR传感器去磁的温度，以及在施加用于磁化MR传感器的磁场的同时冷却MR传感器。 因此，可以通过获得适于使用安装在头部内的加热器退火MR传感器的温度，在完全组装的HDD中进行退火。

    Localized pole tip heating device for magnetic head for hard disk drive
    78.
    发明授权
    Localized pole tip heating device for magnetic head for hard disk drive 有权
    用于硬盘驱动器的磁头的本地极尖加热装置

    公开(公告)号：US07023660B2

    公开(公告)日：2006-04-04

    申请号：US10624656

    申请日：2003-07-21

    Applicant: Wen-Chien David Hsiao ,  Quan-Chiu Harry Lam

    Inventor： Wen-Chien David Hsiao ,  Quan-Chiu Harry Lam

    IPC: G11B5/147

    CPC classification number: G11B5/3133 ,  G11B5/012 ,  G11B5/17 ,  G11B5/3103 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0008 ,  G11B2005/0013

    Abstract: The magnetic head is formed with a narrow pole tip, and a pole tip heating element is fabricated to reduce the pole tip stress and increase its permeability, such that the magnetization switching speed of the pole tip is increased. The heating element is preferably electrically interconnected within the induction coil circuit of the magnetic head, such that the electrical current flowing through the induction coil also flows through the heating element. In a preferred embodiment, the heating element is fabricated above the second magnetic pole. The heating element is preferably formed with a resistance of approximately 0.2 to 1.0 ohms, such that the approximately 40 mA current that flows through the induction coil and the heating element creates a heating energy of the heating element of approximately 0.3 to 1.6 mW. The heating element can be comprised of a variety of materials such as Cu, W, NiFe, NiCr and IrRh.

    Abstract translation: 磁头形成有窄极尖，并且制造极尖加热元件以减小极尖应力并增加其磁导率，使得极尖的磁化转换速度增加。 加热元件优选地在磁头的感应线圈电路内电互连，使得流过感应线圈的电流也流过加热元件。 在优选实施例中，加热元件制造在第二磁极之上。 加热元件优选地形成有大约0.2至1.0欧姆的电阻，使得流过感应线圈和加热元件的大约40mA的电流产生大约0.3至1.6mW的加热元件的加热能量。 加热元件可以由诸如Cu，W，NiFe，NiCr和IrRh的各种材料组成。

    System and method for fixing a direction of magnetization of pinned layers in a magnetic field sensor
    79.
    发明申请
    System and method for fixing a direction of magnetization of pinned layers in a magnetic field sensor 失效
    用于固定磁场传感器中被钉扎层的磁化方向的系统和方法

    公开(公告)号：US20060039090A1

    公开(公告)日：2006-02-23

    申请号：US11255696

    申请日：2005-10-21

    Applicant: Hong Wan ,  Lakshman Withanawasam

    Inventor： Hong Wan ,  Lakshman Withanawasam

    IPC: G11B5/127

    CPC classification number: B82Y25/00 ,  G01R33/093 ,  G11B2005/0008

    Abstract: A spin valve GMR sensor configured in a bridge configuration is provided. The bridge includes two spin valve element pairs. The spin valve elements include a free layer, a space layer, a pinned layer, and a bias layer. The bias layer includes a first bias layer and a second bias layer. The first and second spin valve element pairs are formed on separate metal layers and a current pulse is applied to the metal layers, which sets the direction of magnetization in the pinned layer of the first pair of spin valve elements to be antiparallel to the direction of magnetization in the pinned layer of the second pair of spin valve elements. The same effect can be accomplished by making the pinned layer substantially thicker than the second bias layer in the first spin valve element pair and the pinned layer is substantially thinner than the second bias layer in the second spin valve element pair and applying a magnetic field to the first and the second spin valve element pairs.

    Abstract translation: 提供了配置为桥式结构的自旋阀GMR传感器。 该桥包括两个自旋阀元件对。 自旋阀元件包括自由层，空间层，钉扎层和偏置层。 偏置层包括第一偏置层和第二偏置层。 第一和第二自旋阀元件对形成在分开的金属层上，并且电流脉冲被施加到金属层，其将第一对自旋阀元件的被钉扎层中的磁化方向设定为反平行于 第二对自旋阀元件的被钉扎层的磁化强度。 通过在第一自旋阀元件对中使钉扎层基本上比第二偏置层厚，并且被钉扎层比第二自旋阀元件对中的第二偏置层基本上薄，并且将磁场施加到 第一和第二自旋阀元件对。

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