Abstract:
An infrared sensor device includes at least one sensor element formed in a semiconductor substrate, an SOI wafer that defines a gap below and around the sensor element, and a suspension device that is configured to suspend the sensor element in the SOI wafer. The sensor element is substantially arranged below the suspension device, thereby achieving a high sensitivity, low thermal capacity, low thermal coupling to the substrate and a high image refresh rate.
Abstract:
An image pixel apparatus for detecting electromagnetic radiation includes an absorption structure device configured to absorb the electromagnetic radiation and to take it up as a quantity of heat. At least one plasmonic resonance structure device of the apparatus is configured to forward the electromagnetic radiation to the absorption structure device. A detection device that has at least one detection element is configured to detect the electromagnetic radiation by way of changes in an electrical property of the at least one detection element that are caused by the quantity of heat taken up.
Abstract:
A diaphragm structure of a micromechanical component includes: a diaphragm integrated via at least one spring element into a layered structure, the diaphragm spanning a cavern, so that at least one section of the diaphragm edge extends up to and beyond the edge area of the cavern; and an anchoring structure formed in the overlap area between the diaphragm and the cavern edge area. The anchoring structure includes at least one anchor element structured out of the layered structure above the cavern edge area, and one through opening for the anchor element formed in the edge area of the diaphragm, so that there is a clearance between the anchor element and the through opening which allows for a mechanical stress relaxation of the diaphragm.
Abstract:
A thermodiode element for a photosensor of a thermocamera usable for infrared radiation measurement includes a semiconductor substrate that has a first layer, and a second layer adjoining the first layer. The first layer has a base doping zone, and the second layer has a side doping zone that is the same doping type as the base doping zone. The second layer also has a further doping zone that is arranged as an island in the side doping zone and that has a doping type that is opposite to the doping type of the base doping zone. The base doping zone is further arranged in the first layer so as to adjoin the further doping zone.
Abstract:
A microelectromechanical component and a method for producing a microelectromechanical component includes a charge-storing layer that has improved long-term stability. The charge-storing layer is completely enclosed by dielectric layers such that there is a high potential barrier between the charge-storing layer and the dielectric layers. During normal operation, it is not possible to overcome this high potential barrier and, as a result, the stored charge carriers are maintained over a very long period of time.
Abstract:
A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.
Abstract:
A bonding pad for thermocompression bonding of a carrier material to a further carrier material includes a base layer and a top layer. The base layer is made of metal, is deformable, and is connected to the carrier material. The metal is nickel-based. The top layer is metallic and is connected directly to the base layer. The top layer is arranged at least on a side of the base layer which faces away from the carrier material. The top layer has a smaller layer thickness than the base layer. In at least one embodiment, the top layer has a greater oxidation resistance than the base layer.
Abstract:
A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.
Abstract:
A microelectromechanical device for capacitive fluid pressure measurement. The microelectromechanical device has a first electrode and a second electrode forming a counter-electrode. The device has a cavity formed between a first boundary layer and a second boundary layer or a substrate, in which cavity the first electrode is arranged and movably mounted, wherein the first boundary layer and/or the second boundary layer can be deflected by a fluid pressure and wherein the first boundary layer and/or the second boundary layer is or are coupled to the first electrode by a first coupling element for transmitting a deflection movement to the movably mounted first electrode. A microelectromechanical pressure sensor, a microelectromechanical microphone, and a microelectromechanical combination sensor element, are also disclosed.
Abstract:
A high-frequency filter device. The high-frequency filter device includes a signal input, which is designed to receive a high-frequency signal. The high-frequency filter device also includes a plurality of filter units, which are designed to filter the high-frequency signal received by the signal input. The high-frequency filter device also includes at least one switch unit, which can be actuated by a switch signal in order to modify a filter characteristic of the high-frequency filter device by connecting the filter units. The high-frequency filter device includes a signal output, which is designed to output the filtered high-frequency signal.