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公开(公告)号：US20130214667A1
公开(公告)日：2013-08-22
申请号：US13617722
申请日：2012-09-14
IPC分类号： H05B33/02
CPC分类号： F21V7/22 , F21K9/60 , F21V9/30 , F21Y2115/10 , H01L25/0753 , H01L33/507 , H01L2224/48091 , H01L2224/48137 , H01L2924/12044 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： According to an exemplary embodiment, a lighting apparatus includes a light source that includes a light emitting element, and a member which is irradiated with light emitted from the light source and which is formed of resin having absorptivity of 15% or less in a wavelength in which intensity is 10% of a peak intensity, at a wavelength side that is shorter than an intensity peak of a spectrum of blue light emitted from the light source.
摘要翻译： 根据示例性实施例，照明装置包括：光源，其包括发光元件;以及照射由光源发射的光并且由具有15％或更小的吸收率的树脂形成的波长的构件 在比从光源发出的蓝光的光谱的强度峰值短的波长侧，该强度为峰值强度的10％。
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公开(公告)号：US08134191B2
公开(公告)日：2012-03-13
申请号：US12160291
申请日：2006-07-11
IPC分类号： H01L31/09
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译： 一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一 光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的， 交替地排列在行方向和列方向上。 此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光 ，蓝光和红外灯。
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公开(公告)号：US07791660B2
公开(公告)日：2010-09-07
申请号：US11797128
申请日：2007-05-01
CPC分类号： H04N5/335 , H03F3/082 , H03F2200/498 , H03F2200/75 , H04N5/378
摘要： A solid-state image sensing device includes: a pixel array in which pixels performing photoelectric conversion are arranged in rows and columns; and a column amplification section in which an image signal output from each pixel is amplified. The column amplification section includes amplifiers each of which is provided for each column, and the column amplification section is connected to a power supply voltage feed section and the ground. An impedance on the power supply side of the amplifier is greater than an impedance on the ground side.
摘要翻译： 固态图像感测装置包括：像素阵列，其中执行光电转换的像素被排列成行和列; 以及其中从每个像素输出的图像信号被放大的列放大部分。 列放大部分包括为每列提供的放大器，列放大部分连接到电源电压馈送部分和地。 放大器电源侧的阻抗大于接地侧的阻抗。
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公开(公告)号：US20100045835A1
公开(公告)日：2010-02-25
申请号：US12376698
申请日：2007-07-20
申请人： Yoshiyuki Matsunaga
发明人： Yoshiyuki Matsunaga
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H04N5/341 , H04N5/378
摘要： An imaging device chip set includes an imaging chip 11 which includes a plurality of unit pixels 21 and at least part of a peripheral circuit section 22 and a DSP chip 13 which includes a digital processing section 31 for converting and processing an image signal and remaining part of the peripheral circuit section 22. A first wiring layer is formed on a first substrate. The first wiring layer includes two or fewer layers in a photosensitive area 20 where the plurality of unit pixels are provided and three or fewer layers in the other area.
摘要翻译： 一种成像装置芯片组包括：成像芯片11，其包括多个单位像素21和至少一部分外围电路部分22和DSP芯片13，该芯片13包括用于转换和处理图像信号的数字处理部分31和剩余部分 第一布线层形成在第一基板上。 第一布线层包括设置多个单位像素的光敏区域20中的两个或更少层，而在另一区域中包含三层或更少层。
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公开(公告)号：US07157754B2
公开(公告)日：2007-01-02
申请号：US10742419
申请日：2003-12-19
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译： 提供了一种高性能固态成像装置。 固态成像装置包括：多个像素单元; 和驱动单元。 多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流到MOS晶体管的深部分隔离注入层。
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公开(公告)号：US20060226438A1
公开(公告)日：2006-10-12
申请号：US11386324
申请日：2006-03-22
IPC分类号： H01L31/111 , H01L31/06
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14654 , H01L27/14689
摘要： A solid-state imaging device including an n-type semiconductor substrate including a photoelectric conversion portion, and a signal detection portion for detecting a signal charge is used. The photoelectric conversion portion is provided with a photodiode, and a p-well that overlaps the photoelectric conversion portion and the signal detection portion when viewed in a thickness direction of the semiconductor substrate is formed in the semiconductor substrate. The p-well is formed so that a surface side interface is located below a surface side interface of the photodiode. Preferably, the surface side interface of the p-well is located below a lower side interface of the photodiode and an impurity profile of the p-well does not overlap that of the photodiode. At this time, a non-dope region is present between the photodiode and the p-well.
摘要翻译： 使用包括具有光电转换部分的n型半导体衬底和用于检测信号电荷的信号检测部分的固态成像器件。 光电转换部分设置有光电二极管，并且在半导体衬底中形成在半导体衬底的厚度方向上观察时与光电转换部分和信号检测部分重叠的p阱。 p阱形成为使得表面侧界面位于光电二极管的表面侧界面的下方。 优选地，p阱的表面侧界面位于光电二极管的下侧界面的下方，并且p阱的杂质分布不与光电二极管的杂质分布重叠。 此时，在光电二极管和p阱之间存在非掺杂区域。
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公开(公告)号：US07060960B2
公开(公告)日：2006-06-13
申请号：US10727676
申请日：2003-12-04
申请人： Sougo Ohta , Mikiya Uchida , Yoshiyuki Matsunaga
发明人： Sougo Ohta , Mikiya Uchida , Yoshiyuki Matsunaga
CPC分类号： H01L21/76237 , G01J1/44 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device that achieves a reduction in variations appearing on a reproducing screen is provided. The solid-state imaging device includes a plurality of pixel cells that are laid out in matrix form on a semiconductor substrate and a driving unit that is provided to drive the plurality of pixel cells. Each of the plurality of pixel cells includes a photodiode, a MOS transistor, and an element isolating portion 2 that is formed so that the photodiode and the MOS transistor are isolated from each other. The element isolating portion 2 is formed of a STI (Shallow Trench Isolation) that is a grooved portion of the semiconductor substrate. In the semiconductor substrate 7, a STI leakage stopper 1 in which an impurity of a conductive type opposite to a conductive type of source/drain regions in the MOS transistor is introduced is formed to enclose side walls and a bottom face of the element isolating portion 2.
摘要翻译： 提供了实现再现画面上出现的变化减少的固态成像装置。 固态成像装置包括以矩阵形式布置在半导体衬底上的多个像素单元和设置成驱动多个像素单元的驱动单元。 多个像素单元中的每一个包括光电二极管，MOS晶体管和形成为使得光电二极管和MOS晶体管彼此隔离的元件隔离部分2。 元件隔离部分2由作为半导体衬底的沟槽部分的STI（浅沟槽隔离）形成。 在半导体基板7中，形成有与MOS晶体管中的导电型的源极/漏极区域相反的导电类型的杂质导入的STI泄漏挡块1，以封闭侧壁和元件隔离部分的底面 2。
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78.发明申请Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor 有权固态成像装置及其制造方法和行间传输CCD图像传感器公开(公告)号：US20060076582A1
公开(公告)日：2006-04-13
申请号：US11292835
申请日：2005-12-02
IPC分类号： H01L29/768
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译： 提供了一种高性能固态成像装置。 固态成像装置包括：多个像素单元; 和驱动单元。 多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流向MOS晶体管的深部隔离注入层。
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公开(公告)号：US20050167705A1
公开(公告)日：2005-08-04
申请号：US11035201
申请日：2005-01-14
IPC分类号： G11C19/00 , G11C19/28 , H01L27/146 , H01L27/148 , H01L29/768 , H04N5/335 , H04N5/341 , H04N5/374
CPC分类号： H01L27/146 , H04N5/374 , H04N5/3742
摘要： An object of the present invention is to provide a shift register in which it is prevented from malfunctioning because of a portion between a first transistor and a second transistor being in a high-impedance state. The shift register of the present invention includes capacitor means 5 for storing data outputted from a unit circuit 1 of the preceding block. A first transistor 3 is turned ON only when data is being stored in the capacitor means 5. A second transistor 7 includes a control electrode and an input-side diffusion layer connected to the output-side diffusion layer of the first transistor 3, and is turned ON only when a pulse of a clock signal from the first transistor 3 is inputted to the control electrode and the input-side diffusion layer. Potential controlling means 2 keeps the second transistor 7 OFF at least during a period in which the second transistor 7 is supposed to be OFF.
摘要翻译： 本发明的目的是提供一种移位寄存器，其中由于第一晶体管和第二晶体管之间的部分处于高阻抗状态而防止其发生故障。 本发明的移位寄存器包括用于存储从前一块的单元电路1输出的数据的电容器装置5。 只有当数据被存储在电容器装置5中时，第一晶体管3才导通。 第二晶体管7包括控制电极和连接到第一晶体管3的输出侧扩散层的输入侧扩散层，并且仅当来自第一晶体管3的时钟信号的脉冲被输入到 控制电极和输入侧扩散层。 电位控制装置2至少在第二晶体管7应该是断开的时段期间使第二晶体管7截止。
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公开(公告)号：US06794801B2
公开(公告)日：2004-09-21
申请号：US10284348
申请日：2002-10-31
申请人： Takeo Yasuda , Masahiro Toda , Shinichiro Matsumoto , Tsutomu Araki , Toshiyuki Hiraoka , Yoshiyuki Matsunaga
发明人： Takeo Yasuda , Masahiro Toda , Shinichiro Matsumoto , Tsutomu Araki , Toshiyuki Hiraoka , Yoshiyuki Matsunaga
IPC分类号： H01J102
CPC分类号： H01J61/52 , H01J61/327 , H01J61/56
摘要： A compact selfballasted fluorescent lamp includes a fluorescent arc tube forming a crooked discharge path, a housing comprised of a first end portion open to be fit thereon with a bulb-base, a middle portion and a second end portion open to be mounted thereto with the fluorescent arc tube, a lighting circuit module accommodated in the housing, the unit being provided with a circuit board and two or more circuit components mounted on the circuit board for constituting a lighting circuit for lighting the fluorescent arc tube, and a thermal conductor having a thermal conductivity of 0.1 W/(m·K) or more, which is filled in the housing, extending upwards from a components mounting side of the circuit board of the lighting circuit module and contacting with the inner wall of the housing lying on the side of the first end portion of the housing, thereby covering at least one of the circuit components of the lighting circuit.
摘要翻译： 一种紧凑的自放射荧光灯包括形成弯曲放电路径的荧光发光管，壳体，其具有开口以与其配合的第一端部，其具有灯泡基部，中间部分和第二端部开口以安装在其上， 荧光灯管，容纳在壳体中的照明电路模块，该单元设置有电路板和安装在电路板上的两个或更多个电路部件，用于构成用于点亮荧光发光管的点亮电路，以及具有 填充在壳体中的热导率为0.1W /（mK）以上，从照明电路模块的电路板的部件安装侧向上延伸，并与位于照明电路模块侧的壳体的内壁相接触 壳体的第一端部，从而覆盖照明电路的至少一个电路部件。
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