公开(公告)号：US20230335376A1

公开(公告)日：2023-10-19

申请号：US17723722

申请日：2022-04-19

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Fernando SILVEIRA ,  Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Imad YOUSIF

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/06375 ,  H01J2237/2007

Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.

公开(公告)号：US20230197495A1

公开(公告)日：2023-06-22

申请号：US17553305

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： James David CARDUCCI ,  Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  Silverst Antony RODRIGUES ,  Yang YANG

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01L21/68742 ,  H01L21/68735 ,  H01J37/32724 ,  H01J37/32642 ,  H01J37/32834 ,  H01J2237/334

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.

公开(公告)号：US20230187250A1

公开(公告)日：2023-06-15

申请号：US17550932

申请日：2021-12-14

Applicant: Applied Materials, Inc.

Inventor： Arvinder S. CHADHA ,  Kartik RAMASWAMY

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/6719

Abstract: Electrostatic chucks for use in substrate processing chambers are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes: a dielectric plate having an electrode disposed therein, the dielectric plate further including a central portion and a peripheral portion, wherein the peripheral portion comprises at least one of: an outer sidewall having at least one asperity; a porosity greater than a porosity of the central portion of the dielectric plate; or one or more coatings made of a material different than a material of the central portion.

公开(公告)号：US20220406581A1

公开(公告)日：2022-12-22

申请号：US17351355

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Methods for detecting arcs in power delivery systems for plasma process chambers leverage visible arc detection sensors to facilitate in locating the arc and shutting down a power source associated with arc location. In some embodiments, the method includes receiving an arc indication from an arc detection sensor operating in a visible light spectrum where the at least one arc detection sensor is positioned in an assembly of a power delivery system for a plasma process chamber, determining a location of the arc indication by an arc detection controller of the plasma process chamber, and activating a safety interlock signal to the power source of the power delivery system of the plasma process chamber when the at least one arc indication exceeds a threshold value. The safety interlock signal controls a power status of the power source and activating the safety interlock signal removes power source power.

公开(公告)号：US20220399186A1

公开(公告)日：2022-12-15

申请号：US17352165

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

公开(公告)号：US20220270856A1

公开(公告)日：2022-08-25

申请号：US17183034

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： John POULOSE ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/38

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a third variable capacitor connected in parallel with each of the first variable capacitor and the second variable capacitor and in series with a transistor switch, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

公开(公告)号：US20220254606A1

公开(公告)日：2022-08-11

申请号：US17728794

申请日：2022-04-25

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  SHAHID RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20220037120A1

公开(公告)日：2022-02-03

申请号：US17315259

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Jonathan KOLBECK ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20210043449A1

公开(公告)日：2021-02-11

申请号：US17045453

申请日：2019-04-08

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210040618A1

公开(公告)日：2021-02-11

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  H01L21/02 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process, in particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with power to create a plasma which deposits an amorphour carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.