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公开(公告)号:US06911734B2
公开(公告)日:2005-06-28
申请号:US10391746
申请日:2003-03-20
申请人: Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
发明人: Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
CPC分类号: H05K1/0243 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01079 , H01L2924/09701 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/16152 , H01L2924/1903 , H01L2924/19106 , H01L2924/3011 , H01L2924/3025 , H05K1/0219 , H05K3/361 , H05K2201/10522 , H05K2201/1053 , H05K2201/10659 , H05K2201/10681 , H05K2201/10734 , H01L2924/00014 , H01L2924/00
摘要: A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.
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公开(公告)号:US06727583B2
公开(公告)日:2004-04-27
申请号:US10093639
申请日:2002-03-07
申请人: Yasuhiro Naka , Naotaka Tanaka , Ikuo Yoshida , Satoshi Imasu , Takahiro Naito
发明人: Yasuhiro Naka , Naotaka Tanaka , Ikuo Yoshida , Satoshi Imasu , Takahiro Naito
IPC分类号: H01L2334
CPC分类号: H01L21/563 , H01L25/0655 , H01L25/50 , H01L29/0657 , H01L2224/16225 , H01L2224/32014 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/15311 , H01L2924/3025 , H01L2924/00 , H01L2224/0401
摘要: In a semiconductor device adapted to be mounted on a board and to be electrically connected to the board, comprising, at least two semiconductor electric chips, and a substrate on which the semiconductor electric chips are mounted and to which the semiconductor electric chips are electrically connected, in such a manner that the semiconductor electric chips are mounted on and electrically connected to the board through the substrate, according to the present invention, a thickness of each of the semiconductor electric chips in a direction in which the each of the semiconductor electric chips and the substrate are stacked is smaller than a thickness of the substrate in the direction.
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公开(公告)号:US5637914A
公开(公告)日:1997-06-10
申请号:US438467
申请日:1995-05-10
申请人: Naotaka Tanaka , Akihiro Yaguchi , Makoto Kitano , Tatsuya Nagata , Tetsuo Kumazawa , Atsushi Nakamura , Hiromichi Suzuki , Masayoshi Tsugane
发明人: Naotaka Tanaka , Akihiro Yaguchi , Makoto Kitano , Tatsuya Nagata , Tetsuo Kumazawa , Atsushi Nakamura , Hiromichi Suzuki , Masayoshi Tsugane
IPC分类号: H01L21/56 , H01L23/495
CPC分类号: H01L23/49558 , H01L21/565 , H01L23/49541 , H01L23/49548 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01078 , H01L2924/01087 , H01L2924/181
摘要: A lead frame for use with a plastic encapsulated semiconductor device includes a tab on which the semiconductor chip is mounted, chip pad supporting leads, inner leads to be electrically coupled with the semiconductor chip, outer leads formed in a monoblock structure together with the inner leads, and a frame for supporting the chip pad supporting leads and outer leads. In the lead frame, there is disposed a dam member only between the outer leads. Alternatively, dummy outer leads are formed between the frame and leads adjacent thereto so as to connect the dummy leads to the outer leads by the dam member. The frame is removed after the semiconductor device is assembled.
摘要翻译: 与塑料封装的半导体器件一起使用的引线框架包括其上安装有半导体芯片的突片,芯片焊盘支撑引线,与半导体芯片电耦合的内部引线,与内部引线一起形成为整体结构的外部引线 以及用于支撑芯片焊盘支撑引线和外引线的框架。 在引线框架中,仅在外引线之间设置阻挡构件。 或者,在框架和与其相邻的导线之间形成虚设外引线,以便通过坝构件将虚拟引线连接到外引线。 在组装半导体器件之后移除框架。
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