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    A SOLAR CELL STRUCTURE AND A METHOD OF ITS FABRICATION
    61.
    发明申请
    A SOLAR CELL STRUCTURE AND A METHOD OF ITS FABRICATION 审中-公开
    太阳能电池结构及其制造方法

    公开(公告)号：US20160155870A1

    公开(公告)日：2016-06-02

    申请号：US14896369

    申请日：2014-06-05

    申请人： SOL VOLTAICS AB

    发明人： Ingvar ÅBERG ,  Jonas OHLSSON ,  Damir ASOLI ,  Nicklas ANTTU

    IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/0216

    CPC分类号： H01L31/035281 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544 ,  Y02E10/548

    摘要： A solar cell structure (1) and a method of its fabrication, the structure comprising an array of elongated nanowires (2) made in a semiconductor material having a direct band gap. Each nanowire (2) has at least a first (3) and a second (4) sections. Said structure comprises a first electrode layer (7) realizing ohmic contact to at least one portion of each first section (3), a second, optically transparent electrode layer (8) realizing contact to at least one portion of each second section. Each nanowire (2) comprises a minority carrier barrier element (6) for minimizing recombination of minority carriers at the contact to the second electrode layer (8).

    摘要翻译： 一种太阳能电池结构（1）及其制造方法，该结构包括由具有直接带隙的半导体材料制成的细长纳米线阵列（2）。 每个纳米线（2）至少具有第一（3）和第二（4）部分。 所述结构包括实现与每个第一部分（3）的至少一部分欧姆接触的第一电极层（7），实现与每个第二部分的至少一部分接触的第二光学透明电极层（8）。 每个纳米线（2）包括用于最小化与第二电极层（8）的接触处的少数载流子的复合的少数载流子势垒元件（6）。

    Methods for forming optoelectronic devices including heterojunction
    64.
    发明授权
    Methods for forming optoelectronic devices including heterojunction 有权
    用于形成包括异质结的光电器件的方法

    公开(公告)号：US09178099B2

    公开(公告)日：2015-11-03

    申请号：US13451439

    申请日：2012-04-19

    申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

    摘要翻译： 实施例通常涉及诸如光伏电池的光电半导体器件。 一方面，用于形成器件的方法包括形成由砷化镓（GaAs）制成并具有一种类型的掺杂的吸收层，并形成由不同材料制成并具有比吸收层更高的带隙的发射极层。 可以在发射极和吸收层之间形成中间层。 在发射极层和吸收层之间形成异质结和p-n结，其中在与异质结偏离的位置处至少部分地在不同的材料内形成p-n结。 吸收层的大部分可以在由p-n结形成的耗尽区的外部。 p-n结导致电池响应于电池暴露于正面的光而产生电压。

    Reverse heterojunctions for solar cells
    65.
    发明授权
    Reverse heterojunctions for solar cells 有权
    太阳能电池的反向异质结

    公开(公告)号：US09153724B2

    公开(公告)日：2015-10-06

    申请号：US13442146

    申请日：2012-04-09

    申请人： Rebecca E. Jones-Albertus ,  Michael J. Sheldon

    发明人： Rebecca E. Jones-Albertus ,  Michael J. Sheldon

    IPC分类号： H01L31/042 ,  H01L31/0725 ,  H01L31/0735

    CPC分类号： H01L31/0725 ,  H01L31/0735 ,  Y02E10/544

    摘要： In a solar cell having one or more subcells, at least one subcell is provided with a reverse heterojunction, the reverse heterojunction being formed with an emitter and an adjacent base, wherein the emitter has a band gap that is at least 10 meV lower than that of the adjacent base in order to reduce sheet resistance of the emitter and/or increase the subcell current with minimal effect on the open-circuit voltage. Because of the increase in current, the decrease in emitter sheet resistance, and relatively unchanged open-circuit voltage of the subcell, the efficiency of a solar cell employing one or more subcells with reverse heterojunctions is enhanced.

    摘要翻译： 在具有一个或多个子电池的太阳能电池中，至少一个子电池具有反向异质结，反向异质结由发射极和相邻的基底形成，其中发射极的带隙至少低于10meV， 以减小发射极的薄层电阻和/或增加子电池电流，同时对开路电压的影响最小。 由于电流的增加，发射极电阻的降低和子电池的开路电压相对不变，所以采用具有反向异质结的一个或多个子电池的太阳能电池的效率提高。

    Alternating Bias Hot Carrier Solar Cells
    67.
    发明申请
    Alternating Bias Hot Carrier Solar Cells 有权
    交替偏置热载体太阳能电池

    公开(公告)号：US20150263202A1

    公开(公告)日：2015-09-17

    申请号：US14724518

    申请日：2015-05-28

    申请人： Ostendo Technologies, Inc.

    发明人： Hussein S. El-Ghoroury ,  Dale A. McNeill ,  Selim E. Guncer

    IPC分类号： H01L31/0352 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/068 ,  H01L31/0735

    CPC分类号： H02S40/34 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y99/00 ,  H01L31/02008 ,  H01L31/02021 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0322 ,  H01L31/0352 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/042 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/0749 ,  H02S40/32 ,  Y02E10/541 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/755 ,  Y10S977/774 ,  Y10S977/948

    摘要： Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

    摘要翻译： 描述了极高效太阳能电池的设计。 一种新颖的交流偏压方案通过实现热载流子的提取，增强了电池带隙以上的光伏功率提取能力。 当应用于常规太阳能电池时，这种交替偏置方案具有将其产生的净效率增加一倍以上的潜力。 当与结合量子阱（QW）或量子点（QDs）的太阳能电池的太阳能电池结合使用时，所描述的交替偏置方案具有延伸太阳能电池功率提取覆盖范围的潜力，可能跨越整个太阳光谱，从而实现了前所未有的 太阳能发电提取效率。 在这样的电池内，新颖的交流偏压方案将电池能量转换能力扩展到电池材料带隙之上，而量子限制结构用于将电池能量转换能力扩展到低于电池带隙。 光限制腔被并入细胞结构中，以便吸收细胞内部光发射，从而进一步提高细胞效率。

    Methods for forming optoelectronic devices including heterojunction
    69.
    发明授权
    Methods for forming optoelectronic devices including heterojunction 有权

    公开(公告)号：US09082919B2

    公开(公告)日：2015-07-14

    申请号：US13451439

    申请日：2012-04-19

    申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

    Multiple stack deposition for epitaxial lift off
    70.
    发明授权
    Multiple stack deposition for epitaxial lift off 有权
    用于外延剥离的多堆沉积

    公开(公告)号：US09068278B2

    公开(公告)日：2015-06-30

    申请号：US12632565

    申请日：2009-12-07

    申请人： Gang He ,  Andreas Hegedus

    发明人： Gang He ,  Andreas Hegedus

    IPC分类号： C30B21/02 ,  C30B29/42 ,  C30B29/40 ,  C30B33/06 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/18 ,  H01L21/02

    CPC分类号： C30B29/42 ,  C30B29/40 ,  C30B33/06 ,  H01L21/02463 ,  H01L21/02546 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    摘要： Embodiments of the invention are provided for a thin film stack containing a plurality of epitaxial stacks disposed on a substrate and a method for forming such a thin film stack. In one embodiment, the epitaxial stack contains a first sacrificial layer disposed over the substrate, a first epitaxial film disposed over the first sacrificial layer, a second sacrificial layer disposed over the first epitaxial film, and a second epitaxial film disposed over the second sacrificial layer. The thin film stack may further contain additional epitaxial films disposed over sacrificial layers. Generally, the epitaxial films contain gallium arsenide alloys and the sacrificial layers contain aluminum arsenide alloys. Methods provide the removal of the epitaxial films from the substrate by etching away the sacrificial layers during an epitaxial lift off (ELO) process. The epitaxial films are useful as photovoltaic cells, laser diodes, or other devices or materials.

    摘要翻译： 提供本发明的实施例用于包含设置在基板上的多个外延叠层的薄膜堆叠和用于形成这种薄膜叠层的方法。 在一个实施例中，外延堆叠包含设置在衬底上的第一牺牲层，设置在第一牺牲层上的第一外延膜，设置在第一外延膜上的第二牺牲层，以及设置在第二牺牲层上的第二外延膜 。 薄膜叠层还可以包含设置在牺牲层上的额外的外延膜。 通常，外延膜含有砷化镓合金，牺牲层含有砷化铝合金。 方法提供了在外延剥离（ELO）工艺期间通过蚀刻掉牺牲层从衬底去除外延膜。 外延膜可用作光伏电池，激光二极管或其它器件或材料。