公开(公告)号：US07893397B2

公开(公告)日：2011-02-22

申请号：US12092786

申请日：2006-11-07

Applicant: Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

Inventor： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

IPC: H01H3/02

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/67109 ,  Y10T29/49002

Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.

Abstract translation: 在FIB电路编辑操作中使用远光束电流的装置和方法，而不产生静电放电事件。 内部部分腔室设置在FIB加工的电路上。 部分室具有用于允许离子束通过的顶部和底部孔，并且通过气体输送喷嘴接收气体。 通过部分室将非反应性气体或非反应性气体和反应性气体的组合添加到FIB室中，直到室达到预定压力。 在预定压力下，部分室中的气体压力将远大于室的气体压力，并且将足够高，使得气体分子将中和通过部分室的光束引起的带电。

公开(公告)号：US20100294929A1

公开(公告)日：2010-11-25

申请号：US12710679

申请日：2010-02-23

Applicant: Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

Inventor： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC: G21K7/00

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

Abstract translation: 本发明的目的是提供一种理想的减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US20100129272A1

公开(公告)日：2010-05-27

申请号：US12562880

申请日：2009-09-18

Applicant: Hideki Fujita ,  Kibatsu Shinohara

Inventor： Hideki Fujita ,  Kibatsu Shinohara

IPC: B01J19/08

CPC classification number: H01J37/32678 ,  H01J37/026 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/0041

Abstract: The plasma generating apparatus includes: an antenna chamber which is disposed adjacently to a plasma chamber that produces a plasma, and which is exhausted to vacuum; an antenna which is disposed in the antenna chamber, and which radiates a high-frequency wave; a partition plate which is made of an insulator, which separates the plasma chamber from the antenna chamber to block a gas from entering the antenna chamber, and which allows the high-frequency wave radiated from the antenna to pass through the partition plate; and a magnet device which is disposed outside the plasma chamber, and which generates a magnetic field for causing electron cyclotron resonance in the plasma chamber.

Abstract translation: 等离子体发生装置包括：天线室，其与等离子体室相邻设置，产生等离子体，并被排出到真空中; 天线，其设置在天线室中，并且辐射高频波; 由绝缘体制成的分隔板，其将等离子体室与天线室分隔开，阻止气体进入天线室，并且允许从天线辐射的高频波通过隔板; 以及设置在等离子体室外部并且产生用于在等离子体室中引起电子回旋共振的磁场的磁体装置。

公开(公告)号：US20100084582A1

公开(公告)日：2010-04-08

申请号：US12244978

申请日：2008-10-03

Applicant: D. Jeffrey LISCHER ,  John (Bon-Woong) KOO ,  Peter F. KURUNCZI ,  Shardul PATEL ,  Wilhelm P. PLATOW

Inventor： D. Jeffrey LISCHER ,  John (Bon-Woong) KOO ,  Peter F. KURUNCZI ,  Shardul PATEL ,  Wilhelm P. PLATOW

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/006 ,  H01J2237/047 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/248 ,  H01J2237/30438 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.

Abstract translation: 一种用于中和与高电流低能量离子束相关的空间电荷效应的离子注入系统。 植入系统包括被配置为接收掺杂剂气体并产生具有特定能量和质量的离子的离子源，离子通过孔提取离子。 位于离子源下游的工件，用于接收离子束形式的提取的离子。 排放气体通道，设置在离子源和工件之间。 排出气体通道供应用于中和与离子束相关联的空间电荷效应的气体。

公开(公告)号：US20090203199A1

公开(公告)日：2009-08-13

申请号：US12304241

申请日：2007-06-12

Applicant: Junzo Ishikawa ,  Dan Nicolaescu ,  Yasuhito Gotoh ,  Shigeki Sakai

Inventor： Junzo Ishikawa ,  Dan Nicolaescu ,  Yasuhito Gotoh ,  Shigeki Sakai

IPC: H01L21/425 ,  H01J37/08 ,  H01J27/00

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

Abstract: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).

Abstract translation: 离子束照射装置具有设置在离子束2的路径附近并发射电子的场致发射电子源10.场致发射电子源10沿着形成的入射角的方向 由电子源10发射的电子12和与离子束2的行进方向平行的方向在-15度的范围内。 至+45度 （离子束2的向内方向为+，向外方向为 - ）。

公开(公告)号：US20080302954A1

公开(公告)日：2008-12-11

申请号：US12092786

申请日：2006-11-07

Applicant: Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

Inventor： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

IPC: H05H3/00 ,  H05K3/00 ,  B05B1/00

CPC classification number: H01J37/026 ,  H01J2237/0041 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/67109 ,  Y10T29/49002

Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.

Abstract translation: 在FIB电路编辑操作中使用远光束电流的装置和方法，而不产生静电放电事件。 内部部分腔室设置在FIB加工的电路上。 部分室具有用于允许离子束通过的顶部和底部孔，并且通过气体输送喷嘴接收气体。 通过部分室将非反应性气体或非反应性气体和反应性气体的组合添加到FIB室中，直到室达到预定压力。 在预定压力下，部分室中的气体压力将远大于室的气体压力，并且将足够高，使得气体分子将中和通过部分室的光束引起的带电。

公开(公告)号：US07425716B2

公开(公告)日：2008-09-16

申请号：US11414649

申请日：2006-04-27

Applicant: Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

Inventor： Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

IPC: H02H23/00

CPC classification number: H01J37/317 ,  H01J2237/0041

Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

Abstract translation: 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US20080217532A1

公开(公告)日：2008-09-11

申请号：US12043946

申请日：2008-03-06

Applicant: Kazuhiro Ueda ,  Tatsuya Maeda

Inventor： Kazuhiro Ueda ,  Tatsuya Maeda

IPC: G01N23/00

CPC classification number: G01N23/2251 ,  H01J2237/0041 ,  H01J2237/221 ,  H01J2237/248 ,  H01J2237/28

Abstract: A method and apparatus for setting a sample observation condition and a method and apparatus for sample observation which allow sample observation by speedily and simply finding an optimum condition while suppressing damage to the sample are provided. The setting of a sample observation condition according to the present invention is realized by an electron beam apparatus acquiring a profile at a predetermined evaluation location of a sample under a reference observation condition, by a processing section judging whether or not the above described acquired profile is located within a predetermined setting range and setting an optimum observation condition to be used for sample observation based on this judgment result. More specifically, locations where the condition can be examined are registered beforehand first and then a jump is made to the corresponding location which is irradiated with an electron beam (hereinafter referred to as “predosing”) at a low magnification, the surface of the sample is charged, enlarged to an observation magnification and secondary electron information on the target location is obtained. After that, secondary electron information is obtained at any time while performing predosing, it is successively judged from the information whether the pattern bottom part can be observed/measured or whether or not the sample is destroyed and an optimum observation condition is thereby found.

Abstract translation: 提供了一种用于设置样品观察条件的方法和装置以及用于样品观察的方法和装置，其允许通过快速简单地找到最佳条件同时抑制对样品的损伤的样品观察。 根据本发明的样品观察条件的设定是通过电子束装置实现的，该电子束装置在参考观察条件下在样本的预定评估位置获取轮廓，通过处理部分判断上述获得的轮廓是否为 位于预定设定范围内，并且基于该判断结果设定用于样本观察的最佳观察条件。 更具体地说，先检查条件的位置，然后，以低放大倍数，以低放大倍率，对照射有电子束的对应位置（以下称为“预取”）进行跳转，将样品的表面 被放大到观察倍率，并且获得目标位置上的二次电子信息。 之后，在执行预取时随时获得二次电子信息，根据信息连续判断图案底部是否可以被观察/测量，或者样品是否被破坏，从而找到最佳观察条件。

公开(公告)号：US07358510B2

公开(公告)日：2008-04-15

申请号：US11390518

申请日：2006-03-27

Applicant: Joseph C. Olson ,  Morgan Evans

Inventor： Joseph C. Olson ,  Morgan Evans

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/1477 ,  H01J37/302 ,  H01J2237/0041 ,  H01J2237/30488 ,  H01L21/265

Abstract: An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configured to control the scan frequency in response to an operating parameter of the ion implanter. The operating parameter is at least partially dependent on the energy of the ion beam. The scan frequency is greater than a scan frequency threshold if the energy is greater than an energy threshold, and the scan frequency is less than the scan frequency threshold if the energy is less than the energy threshold.

Abstract translation: 离子注入机包括被配置为产生离子束的离子束发生器，配置成以扫描频率沿至少一个方向扫描离子束的扫描器和控制器。 控制器被配置为响应于离子注入机的操作参数来控制扫描频率。 操作参数至少部分取决于离子束的能量。 如果能量大于能量阈值，则扫描频率大于扫描频率阈值，如果能量小于能量阈值，则扫描频率小于扫描频率阈值。

公开(公告)号：US20060169911A1

公开(公告)日：2006-08-03

申请号：US11272193

申请日：2005-11-10

Applicant: Anthony Renau ,  Joseph Olson ,  Shengwu Chang ,  James Buff

Inventor： Anthony Renau ,  Joseph Olson ,  Shengwu Chang ,  James Buff

IPC: H01J1/50

CPC classification number: H01J37/1475 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0042 ,  H01J2237/055

Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

Abstract translation: 公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。 提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。 遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。 还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。