公开(公告)号：US07742252B2

公开(公告)日：2010-06-22

申请号：US11670404

申请日：2007-02-01

Applicant: Robert Glenn Biskeborn ,  Stanley W. Czarnecki ,  Icko E. T. Iben ,  Larry LeeRoy Tretter

Inventor： Robert Glenn Biskeborn ,  Stanley W. Czarnecki ,  Icko E. T. Iben ,  Larry LeeRoy Tretter

IPC: G11B5/03

CPC classification number: G11B5/3948 ,  G11B5/00826 ,  G11B5/455 ,  G11B2005/0018

Abstract: An apparatus, system, and method are disclosed for dynamically controlling a recording head substrate bias voltage. The apparatus includes a midpoint module and a substrate module. The midpoint module calculates a midpoint voltage of a plurality of data read elements and servo read elements contained in the head. The substrate module calculates a substrate bias voltage. The apparatus, system, and method dynamically control the substrate bias voltage post-assembly, minimizing certain head degradations and extending the life of associated head readers.

Abstract translation: 公开了用于动态地控制记录头基板偏置电压的装置，系统和方法。 该装置包括中点模块和衬底模块。 中点模块计算包含在头部中的多个数据读取元件和伺服读取元件的中点电压。 衬底模块计算衬底偏置电压。 该装置，系统和方法动态地控制组装后的衬底偏置电压，最小化某些头退化并延长相关头读取器的寿命。

公开(公告)号：US20100142101A1

公开(公告)日：2010-06-10

申请号：US12628577

申请日：2009-12-01

Applicant: Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

Inventor： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

IPC: G11B5/33

CPC classification number: G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

Abstract: According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

Abstract translation: 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

公开(公告)号：US20100020435A1

公开(公告)日：2010-01-28

申请号：US12507881

申请日：2009-07-23

Applicant: YunJie Chen ,  Zhimin Yuan ,  Siang Huei Leong ,  Ka Wei Ng ,  Bo Liu

Inventor： YunJie Chen ,  Zhimin Yuan ,  Siang Huei Leong ,  Ka Wei Ng ,  Bo Liu

IPC: G11B5/596

CPC classification number: G11B5/59633 ,  B82Y10/00 ,  G11B5/02 ,  G11B5/3948 ,  G11B5/397 ,  G11B5/4886 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  G11B2005/0005

Abstract: In a recording device, a bit patterned medium comprises a track of bit cells, each settable to one of two distinct bit states. The track comprises two generally parallel rows of bit cells. The bit cells in one row are offset in a down track direction from the bit cells in the other row. A write head spans the two rows. A controller synchronously applies write signals to the write head to set the trailing bit cell covered by the write head as the track moves relative to the write head, and thereby write data to the track. The trailing bit cell covered by the write head alternates from being in one row to being in another row. Read sensors are positioned to independently read bit cells in respective rows, as the track moves relative to the write head along the down track direction.

Abstract translation: 在记录装置中，位图案化介质包括位单元的轨道，每个可以设置为两个不同位状态之一。 轨道包括两个大致平行的位单元行。 一行中的位单元在向下轨道方向上偏离另一行中的位单元。 写头横跨两行。 当磁道相对于写入头移动时，控制器将写入信号同时施加到写入头以设置由写入头覆盖的尾部位单元，从而将数据写入轨道。 由写入头覆盖的尾部位单元从一行移动到另一行。 读取传感器被定位成独立地读取相应行中的位单元，因为轨道沿着向下的轨迹方向相对于写入头移动。

公开(公告)号：US20090161261A1

公开(公告)日：2009-06-25

申请号：US12170165

申请日：2008-07-09

Applicant: Hubert Grimm ,  Jan Marien ,  Rolf Schaefer

Inventor： Hubert Grimm ,  Jan Marien ,  Rolf Schaefer

IPC: G11B5/33

CPC classification number: G11B5/022 ,  G11B5/00808 ,  G11B5/3948

Abstract: A magnetic sensor having at least a first and at least a second structure of soft-magnetic material that are spatially separated and define a first gap therebetween. The first and second structure of soft-magnetic material are adapted to form a gap magnetic field pointing in a direction substantially perpendicular to the elongation of the first gap in the vicinity of the first gap in response to an external magnetic field. Additionally, the magnetic sensor comprises at least a first magnetoresistive layered structure that is positioned in the vicinity of the first gap including inside the first gap and that is sensitive to the gap magnetic field.

Abstract translation: 一种磁传感器，其具有至少第一和至少第二结构的软磁材料，其在空间上分离并且在它们之间限定第一间隙。 软磁材料的第一和第二结构适于形成指向与第一间隙附近的第一间隙的延伸大致垂直的方向的间隙磁场，该第一间隙响应于外部磁场。 此外，磁传感器至少包括第一磁阻分层结构，其位于包括第一间隙内部并且对间隙磁场敏感的第一间隙附近。

公开(公告)号：US20080186613A1

公开(公告)日：2008-08-07

申请号：US11670404

申请日：2007-02-01

Applicant: Robert Glenn Biskeborn ,  Stanley W. Czarnecki ,  Icko E.T. Iben ,  Larry LeeRoy Tretter

Inventor： Robert Glenn Biskeborn ,  Stanley W. Czarnecki ,  Icko E.T. Iben ,  Larry LeeRoy Tretter

IPC: G11B5/03

CPC classification number: G11B5/3948 ,  G11B5/00826 ,  G11B5/455 ,  G11B2005/0018

Abstract: An apparatus, system, and method are disclosed for dynamically controlling a recording head substrate bias voltage. The apparatus includes a midpoint module and a substrate module. The midpoint module calculates a midpoint voltage of a plurality of data read elements and servo read elements contained in the head. The substrate module calculates a substrate bias voltage. The apparatus, system, and method dynamically control the substrate bias voltage post-assembly, minimizing certain head degradations and extending the life of associated head readers.

Abstract translation: 公开了用于动态地控制记录头基板偏置电压的装置，系统和方法。 该装置包括中点模块和衬底模块。 中点模块计算包含在头部中的多个数据读取元件和伺服读取元件的中点电压。 衬底模块计算衬底偏置电压。 该装置，系统和方法动态地控制组装后的衬底偏置电压，最小化某些头退化并延长相关头读取器的寿命。

公开(公告)号：US20050134990A1

公开(公告)日：2005-06-23

申请号：US10964698

申请日：2004-10-15

Applicant: Reijiro Tsuchiya

Inventor： Reijiro Tsuchiya

IPC: G11B5/09 ,  G11B5/00 ,  G11B5/012 ,  G11B5/02 ,  G11B5/265 ,  G11B5/29 ,  G11B5/31 ,  G11B5/39 ,  G11B5/48 ,  G11B5/49 ,  G11B20/18 ,  G11B15/12 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/2652 ,  G11B5/3103 ,  G11B5/3909 ,  G11B5/3945 ,  G11B5/3948 ,  G11B5/3961 ,  G11B5/3967 ,  G11B5/488 ,  G11B5/4886 ,  G11B5/4984 ,  G11B20/18 ,  G11B2005/001 ,  G11B2005/0016 ,  G11B2005/3996 ,  G11B2020/183

Abstract: A conventional magnetic head has a structure, in which a MR element and a recording element are stacked. The influence of a recording magnetic field on the magnetically sensitive portion of a reproduction element is lessened and the performance of the MR element is stabilized. Also, the reliability of the magnetic disk drive using a MR element is enhanced. The magnetic disk drive uses a composite magnet head, which has a plurality of reproduction elements arranged such that the magnetically sensitive layer of a reproduction element of the composite magnetic head does not overlap with the normal direction projection of the recording element, and which lessens the influence of a recording magnetic field on the magnetically sensitive portion of each reproduction element.

Abstract translation: 传统的磁头具有堆叠MR元件和记录元件的结构。 记录磁场对再现元件的磁敏部分的影响减小，并且MR元件的性能稳定。 此外，使用MR元件的磁盘驱动器的可靠性增强。 磁盘驱动器使用复合磁头，其具有多个再现元件，其布置成使得复合磁头的再现元件的磁敏层不与记录元件的法线方向投影重叠，并且减小了 记录磁场对每个再现元件的磁敏部分的影响。

公开(公告)号：US06816344B2

公开(公告)日：2004-11-09

申请号：US09956976

申请日：2001-09-21

Applicant: Reijiro Tsuchiya

Inventor： Reijiro Tsuchiya

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/2652 ,  G11B5/3103 ,  G11B5/3909 ,  G11B5/3945 ,  G11B5/3948 ,  G11B5/3961 ,  G11B5/3967 ,  G11B5/488 ,  G11B5/4886 ,  G11B5/4984 ,  G11B20/18 ,  G11B2005/001 ,  G11B2005/0016 ,  G11B2005/3996 ,  G11B2020/183

Abstract: A conventional magnetic head has a structure, in which a MR element and a recording element are stacked. The influence of a recording magnetic field on the magnetically sensitive portion of a reproduction element is lessened and the performance of the MR element is stabilized. Also, the reliability of the magnetic disk drive using a MR element is enhanced. The magnetic disk drive uses a composite magnetic head, which has a plurality of reproduction elements arranged such that the magnetically sensitive layer of a reproduction element of the composite magnetic head does not overlap with the normal direction projection of the recording element, and which lessens the influence of a recording magnetic field on the magnetically sensitive portion of each reproduction element.

Abstract translation: 传统的磁头具有堆叠MR元件和记录元件的结构。 记录磁场对再现元件的磁敏部分的影响减小，并且MR元件的性能稳定。 此外，使用MR元件的磁盘驱动器的可靠性增强。 磁盘驱动器使用复合磁头，其具有多个再现元件，其被布置成使得复合磁头的再现元件的磁敏层不与记录元件的法线方向投影重叠，并且减小了 记录磁场对每个再现元件的磁敏部分的影响。

公开(公告)号：US06704178B2

公开(公告)日：2004-03-09

申请号：US10092911

申请日：2002-03-07

Applicant: Eiji Nakashio ,  Seiji Onoe ,  Junichi Sugawara

Inventor： Eiji Nakashio ,  Seiji Onoe ,  Junichi Sugawara

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3103 ,  G11B5/3909 ,  G11B5/3948 ,  G11B5/3967

Abstract: A multichannel magnetic head utilizing the magnetoresistive effect comprises a plurality of magnetoresistive effect type reproducing magnetic head elements arrayed between a first and second magnetic shield and electrodes wherein the reproducing magnetic head elements are arrayed in parallel on at least the first magnetic shield and electrode. Electrodes on one side are constructed commonly by the first magnetic shield and led out as a single common terminal decreasing the number of terminals. Therefore, the number of the terminals in the multichannel magnetic head using the magnetoresistive effect can be decreased, the multichannel magnetic head can be miniaturized, the occurrence of a short-circuit between the terminals or between the leads can be removed, the occurrence of fluctuations of element characteristics can be removed, the multichannel magnetic head using the magnetoresistive effect can become highly reliable and a yield of the multichannel magnetic head using the magnetoresistive effect can be improved.

Abstract translation: 利用磁阻效应的多通道磁头包括排列在第一和第二磁屏蔽之间的多个磁阻效应型再现磁头元件和电极，其中再生磁头元件至少在第一磁屏蔽和电极上平行排列。 一方面的电极通常由第一磁屏蔽构成，并作为单个公共端引出，减少端子数量。 因此，可以减少使用磁阻效应的多通道磁头中的端子数量，可以使多通道磁头小型化，能够消除端子之间或引线之间的短路的发生，发生波动 可以去除元件特性，使用磁阻效应的多通道磁头可以变得高可靠性，并且可以提高使用磁阻效应的多通道磁头的产量。

公开(公告)号：US06687977B2

公开(公告)日：2004-02-10

申请号：US09785752

申请日：2001-02-20

Applicant: Kenneth E. Knapp ,  Ronald A. Barr

Inventor： Kenneth E. Knapp ,  Ronald A. Barr

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3948 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/4905 ,  Y10T29/49052

Abstract: A magnetoresistive device includes a metal layer, formed over a substrate, in which a groove is formed. A magnetoresistive element is formed in the groove, forming two magnetoresistive element portions that are separated by a conductive element. A sense current applied to the metal layer flows through the two magnetoresistive element portions with a predominant current-perpendicular-to-plane component. The method includes techniques that are less complex and less expensive than submicron photolithography to form the above described magnetoresistive device with submicron geometries.

Abstract translation: 磁阻器件包括形成在其上形成有沟槽的衬底上的金属层。 在沟槽中形成磁阻元件，形成由导电元件分开的两个磁阻元件部分。 施加到金属层的感测电流以主要的电流 - 垂直于平面的分量流过两个磁阻元件部分。 该方法包括比亚微米光刻更复杂和更便宜的技术，以形成具有亚微米几何形状的上述磁阻器件。

公开(公告)号：US06606781B1

公开(公告)日：2003-08-19

申请号：US09694733

申请日：2000-10-23

Applicant: Hardayal Singh Gill

Inventor： Hardayal Singh Gill

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3103 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3948 ,  G11B2005/3996 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: An apparatus and method is disclosed for an enhanced double tunnel junction sensor which utilizes an enhancement layer(s) to enhance magnetoresistance (MR coefficient) and resonant tunneling. Additionally, a combined read/write head and disk drive system is disclosed utilizing the enhanced double tunnel junction sensor of the present invention. The enhancement layers improve the resonant tunneling and boost the MR coefficient to achieve a higher tunnel magnetoresistance (TMR) for the structure with applied dc bias. This is accomplished by using enhancement layers that create a quantum well between the enhancement layer and the pinned layer, which causes resonance, enhancing the tunneling electrons. By doing this, the tunneling constraints on the free layer are decoupled, allowing the free layer to be made thicker which results in reducing or eliminating free layer magnetic saturation caused by an external magnetic source. As the enhanced double tunnel junction sensor is positioned over the magnetic disk, the external magnetic fields sensed from the rotating disk moves the direction of magnetic moment of the free layer up or down, changing the resistance through the tunnel junction sensor. As the tunnel current is conducted through the tunnel junction sensor, the increase and decrease of electron tunneling (i.e., increase and decrease in resistance) are manifested as potential changes. These potential changes are then processed as readback signals by the processing circuitry of the disk drive.

Abstract translation: 公开了一种用于增强双隧道结传感器的装置和方法，其利用增强层来增强磁阻（MR系数）和谐振隧穿。 此外，利用本发明的增强型双隧道结传感器公开了组合的读/写磁头和磁盘驱动器系统。 增强层改善谐振隧穿并提高MR系数，以实现具有施加的直流偏置的结构的较高的隧道磁阻（TMR）。 这通过使用在增强层和被钉扎层之间产生量子阱的增强层来实现，这引起共振，增强隧道电子。 通过这样做，自由层上的隧道约束是去耦合的，允许自由层变得更厚，这导致减少或消除由外部磁源造成的自由层磁饱和。 随着增强型双隧道结传感器位于磁盘上方，从旋转盘检测到的外部磁场使自由层的磁矩向上或向下移动，通过隧道结传感器改变电阻。 当隧道电流通过隧道结传感器传导时，电子隧穿的增加和减小（即电阻的增加和减少）都表现为电位变化。 这些潜在的变化然后由磁盘驱动器的处理电路处理为回读信号。