公开(公告)号：US20040097088A1

公开(公告)日：2004-05-20

申请号：US10466116

申请日：2003-07-23

Inventor： Hirofumi Kitayama ,  Noriaki Matsushima

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  H01L021/306

CPC classification number: H01L21/67109 ,  C30B31/14 ,  C30B31/16

Abstract: A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target substrate (W) thereon. The worktable (40) is provided with a flow passage (50) formed therein, in which a thermal medium flows for adjusting temperature of the target substrate (W) through the mount surface (41). The flow passage (50) is connected to a thermal medium supply system (54), which selectively supplies a cooling medium and a heating medium.

Abstract translation: 单基板处理装置（20）具有设置在容纳目标基板（W）的处理室（24）中的工作台（40）。 工作台（40）具有用于将目标衬底（W）放置在其上的导热安装表面（41）。 工作台（40）具有形成在其中的流路（50），其中热介质流过用于通过安装表面（41）调节目标基板（W）的温度。 流路（50）连接到热介质供给系统（54），该系统选择性地供应冷却介质和加热介质。

公开(公告)号：US06413884B1

公开(公告)日：2002-07-02

申请号：US09092091

申请日：1998-06-05

Applicant: Tsuyoshi Moriyama

Inventor： Tsuyoshi Moriyama

IPC: H01L2131

CPC classification number: H01L21/67109 ,  C30B31/16

Abstract: The present invention provides a heat treatment apparatus capable of forming a uniform thin layer on the substrate provided with a furnace core pipe, a substrate supporting boat for supporting a lot of substrates disposed in the furnace core pipe and a process gas injector pipe having many blowing holes for spouting the process gas toward the substrate, the supporting boat having a rotation mechanism to rotate around the normal line passing through one principal face of the substrate as a rotation axis. In the apparatus, an inert gas injector pipe has the same number of inert gas or nitrogen gas blowing holes as the number of process gas blowing holes and is provided at an approximately symmetrical position relative to the center line of the rotation axis.

Abstract translation: 本发明提供一种能够在设置有炉芯管的基板上形成均匀的薄层的热处理装置，用于支撑布置在炉芯管中的许多基板的基板支撑船和具有许多吹气的处理气体喷射管 用于将处理气体喷射到基板的孔，支撑船具有旋转机构，以绕作为旋转轴线的基板的一个主面的法线旋转。 在该装置中，惰性气体喷射管与处理气体吹入孔的数量相同数量的惰性气体或氮气吹入孔相对于旋转轴线的中心线设置在大致对称的位置。

公开(公告)号：US06308738B1

公开(公告)日：2001-10-30

申请号：US09451285

申请日：1999-11-30

Applicant: Tien-Jui Liu ,  Eric Chu ,  Tony Chen

Inventor： Tien-Jui Liu ,  Eric Chu ,  Tony Chen

IPC: F23D1462

CPC classification number: C30B25/14 ,  C23C16/45591 ,  C30B31/16 ,  Y10S438/935 ,  Y10T137/87281

Abstract: A drafting apparatus in a furnace. A buffer board having a plurality of gas intakes is disposed in a front end of the drafting apparatus. A laminar flow board having a plurality of gas outtakes is disposed in a rear end of the drafting apparatus. A drafting region is enclosed by the drafting apparatus. The drafting region comprises at least one drafting board to draft and redirect the gas flow. A laminar flow is then obtained to flow through the outtakes on the laminar board.

Abstract translation: 炉中的牵伸装置。 具有多个进气口的缓冲板设置在牵伸装置的前端。 具有多个气体排出口的层流板设置在牵伸装置的后端。 牵伸区域由牵伸装置包围。 起草区域包括至少一个牵伸板，以起草和重定向气流。 然后获得层流以流过层板上的出口。

公开(公告)号：US5883919A

公开(公告)日：1999-03-16

申请号：US859007

申请日：1997-05-20

Applicant: Cheng-Chang Hung ,  Lien-Fang Lin

Inventor： Cheng-Chang Hung ,  Lien-Fang Lin

IPC: C23C16/44 ,  C30B31/16 ,  F27D7/06

CPC classification number: C23C16/4412 ,  C30B31/16

Abstract: A furnace system for preventing gas leakage is disclosed. The furnace system includes a bottom board for holding a furnace tube. A gas injection device is connected to the furnace tube at a first port for injecting reaction gas into the furnace tube. An exhaust subsystem is connected to the furnace tube at a second port. The exhaust subsystem has a first node, a second node, a third node and a fourth node. A vacuum seal is connected to the furnace tube at a third port for preventing the exhaust gas from leaking. The vacuum seal is connected to the exhaust subsystem at the first node and the second node. Finally, an N.sub.2 sealing tube is connected to furnace tube and surrounding the seam between the furnace tube and the bottom board.

Abstract translation: 公开了一种用于防止气体泄漏的炉系统。 炉系统包括用于保持炉管的底板。 气体注入装置在用于将反应气体注入炉管的第一端口连接到炉管。 排气子系统在第二个端口连接到炉管。 排气子系统具有第一节点，第二节点，第三节点和第四节点。 在第三端口处连接到炉管的真空密封件，用于防止废气泄漏。 真空密封件连接到第一节点和第二节点处的排气子系统。 最后，N2密封管连接到炉管并围绕炉管和底板之间的接缝。

公开(公告)号：US5669768A

公开(公告)日：1997-09-23

申请号：US616369

申请日：1996-03-15

Applicant: Yu-Tsai Lin ,  Edward Houn ,  Ben Chen

Inventor： Yu-Tsai Lin ,  Edward Houn ,  Ben Chen

IPC: C30B31/16 ,  C30B33/00 ,  F27D3/16 ,  F27B5/04

CPC classification number: C30B31/16 ,  C30B33/005 ,  F27D3/16

Abstract: An improved apparatus is provided for adjusting a gas injector of a furnace in connection with oxidation, diffusion and heat treating in semiconductor processing. The apparatus includes a reaction tube for serving as a reaction chamber and heat sink. The gas injector is coupled to the reaction tube on one end and includes openings on the other end for passing source gas. An elongated open tube is secured to the gas injector and has its axis superimposed approximately on the axis of the gas injector.

Abstract translation: 提供了一种改进的装置，用于在半导体加工中调节与氧化，扩散和热处理有关的炉的气体注射器。 该装置包括用作反应室和散热器的反应管。 气体喷射器在一端连接到反应管，并且在另一端包括用于使源气体通过的开口。 细长的开放管固定到气体注射器并且其轴线大致重叠在气体注射器的轴线上。

公开(公告)号：US5407349A

公开(公告)日：1995-04-18

申请号：US7699

申请日：1993-01-22

Applicant: Richard R. Hansotte, Jr. ,  Dieter K. Neff ,  Dennis A. Rock ,  Jeffrey A. Walker ,  Roland M. Wanser

Inventor： Richard R. Hansotte, Jr. ,  Dieter K. Neff ,  Dennis A. Rock ,  Jeffrey A. Walker ,  Roland M. Wanser

IPC: C30B31/16 ,  C30B33/00 ,  F27D17/00 ,  F27D3/12

CPC classification number: F27D17/001 ,  C30B31/16 ,  C30B33/00 ,  C30B33/005

Abstract: An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level. Preferably, all portions of the exhaust system potentially exposed to process chamber gases are made from quartz.

Abstract translation: 用于与在半导体制造中使用的类型进行氧化和/或退火操作的高温炉一起使用的排气系统。 排气系统被设计成允许炉与围绕进入炉的处理室的受控环境室一起使用。 当进行正压（例如，退火）操作时，排气系统允许来自处理室的废气通过排气系统相对较高的速度流动。 这种高速流动防止（a）回流和（b）排气系统中不均匀浓度的排气的累积，从而允许精确地监测排气系统中选定气体的浓度。 基于这种监视，当所选择的气体的浓度超过预定水平时，可以防止对炉的处理室的门的打开。 优选地，可能暴露于处理室气体的排气系统的所有部分由石英制成。

公开(公告)号：US5405444A

公开(公告)日：1995-04-11

申请号：US151082

申请日：1993-11-12

Applicant: Mehrdad M. Moslehi

Inventor： Mehrdad M. Moslehi

IPC: H01L21/205 ,  C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  C30B31/16 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  C23C16/00

CPC classification number: H01L21/67017 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  C30B31/16 ,  Y10S438/905 ,  Y10S438/909

Abstract: A process chamber purge module (56) is provided, including a stack module (60) and a process chamber liner (62). The stack module comprises a plurality of quartz plates (100, 110, and 116) having flow apertures to permit radial and axial flow of a purge gas to the backside of a semiconductor wafer (18). The process chamber liner (62) isolates the process chamber walls from the process chamber process environment by flowing between the liner and the walls a portion of the purge gas. Process chamber liner (62) comprises a quartz cylindrical collar that operates to decouple the process chamber (16) process environment (20) from the process chamber collar walls (42). The stack module (60) decouples the process chamber optical/vacuum quartz window (64) from the semiconductor wafer (18) during a heated semiconductor wafer fabrication process. By flowing purge gas to the backside of the semiconductor wafer (18), the present invention prevents reactive process gas interaction with the semiconductor wafer backside.

Abstract translation: 提供了一种处理室净化模块（56），其包括堆叠模块（60）和处理室衬垫（62）。 堆叠模块包括多个具有流动孔的石英板（100,110和116），以允许吹扫气体向半导体晶片（18）的背面径向和轴向流动。 处理室衬套（62）通过在衬套和壁之间流动吹扫气体的一部分来隔离处理室壁与处理室工艺环境。 处理室衬套（62）包括石英圆柱形套环，其操作以将处理室（16）处理环境（20）与处理室套环壁（42）分离。 堆叠模块（60）在加热的半导体晶片制造过程期间将处理室光学/真空石英窗口（64）与半导体晶片（18）分离。 通过将清洗气体流到半导体晶片（18）的背面，本发明防止与半导体晶片背面的反应性工艺气体相互作用。

公开(公告)号：US5330352A

公开(公告)日：1994-07-19

申请号：US11372

申请日：1993-01-29

Applicant: Shingo Watanabe ,  Shinichi Jintate

Inventor： Shingo Watanabe ,  Shinichi Jintate

IPC: H01L21/22 ,  C30B31/16 ,  H01L21/31 ,  F27B9/04

CPC classification number: C30B31/16

Abstract: An oxidation/diffusion processing apparatus includes a processing vessel, arranged such that a longitudinal direction is vertical, for storing a plurality of target objects to be processed, a heater arranged around the processing vessel, for heating the interior of the processing vessel, a process gas supply mechanism for supplying a process gas from the lower portion of the processing vessel into the processing vessel, and an exhaust mechanism for exhausting a processed exhaust gas from the upper portion of the processing vessel. The process gas is supplied to the target objects heated to a predetermined temperature by the heater to perform oxidation/diffusion processing to the target objects.

Abstract translation: 氧化/扩散处理装置包括处理容器，其布置成纵向方向垂直，用于存储待处理的多个目标物体，设置在处理容器周围的用于加热处理容器内部的加热器， 用于将处理气体从处理容器的下部供给到处理容器中的气体供给机构，以及用于从处理容器的上部排出经处理的废气的排气机构。 通过加热器将工艺气体供给到加热到预定温度的目标物体，以对目标物体进行氧化/扩散处理。

公开(公告)号：US5131842A

公开(公告)日：1992-07-21

申请号：US543491

申请日：1990-06-26

Applicant: Shinji Miyazaki ,  Katushin Miyagi ,  Mituaki Komino

Inventor： Shinji Miyazaki ,  Katushin Miyagi ,  Mituaki Komino

IPC: H01L21/302 ,  C23C16/44 ,  C30B25/14 ,  C30B31/16 ,  F27B17/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/3065 ,  H01L21/31

CPC classification number: F27B17/0025 ,  C23C16/44 ,  C30B25/14 ,  C30B31/16

Abstract: A thermal treating apparatus includes a reaction tube having an opening end and storing an object to be treated, an annular manifold arranged at the opening end and having an inlet for supplying a gas to the reaction tube and an outlet for exhausting the gas from the reaction tube, and a cover arranged on the opening end of the manifold. The surfaces of the annular manifold and the cover exposed to the inside of the reaction tube are covered by a material which is not corroded by the gas supplied to the reaction tube.

Abstract translation: 热处理装置包括具有开口端并存储待处理物体的反应管，设置在开口端的环形歧管，并具有用于向反应管供应气体的入口和用于从反应中排出气体的出口 管和布置在歧管的开口端上的盖。 暴露于反应管内部的环形歧管和盖的表面被不被供应到反应管的气体腐蚀的材料覆盖。

公开(公告)号：US5022853A

公开(公告)日：1991-06-11

申请号：US513555

申请日：1990-04-24

Applicant: Eric Powell ,  Navjot Chhabra

Inventor： Eric Powell ,  Navjot Chhabra

IPC: C30B31/16

CPC classification number: C30B31/16

Abstract: Disclosed is a quartz tube for a furnace for processing semiconductor wafers. The furnace comprises:an elongated hollow body having opposed first and second ends and a longitudinal axis;an injector opening being formed in the first end, the injector opening including sidewalls which are spaced to slidably receive an elongated gas injector assembly through the opening; andan alignment jig received within the hollow body inwardly adjacent the first end and injector opening, the alignment jig including support means for engaging and aligning a gas injector with the injector opening to support a gas injector to emit gas substantially along the longitudinal tube body axis.

Abstract translation: 公开了一种用于处理半导体晶片的炉的石英管。 该炉包括：细长的中空体，其具有相对的第一和第二端以及纵向轴线; 喷射器开口形成在所述第一端中，所述喷射器开口包括侧壁，所述侧壁间隔开以通过所述开口可滑动地容纳细长气体喷射器组件; 以及对准夹具，其在中空体内容纳在第一端和喷射器开口内部，该对准夹具包括用于使气体注射器与喷射器开口接合和对准的支撑装置，以支撑气体喷射器，以基本沿着纵管体轴线 。