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公开(公告)号：US11809075B2
公开(公告)日：2023-11-07
申请号：US17394005
申请日：2021-08-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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公开(公告)号：US11726413B2
公开(公告)日：2023-08-15
申请号：US17712419
申请日：2022-04-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Chih Hsieh , Kai-Hsiung Chen , Po-Chung Cheng
IPC: G03F9/00 , H01L23/544 , G03F7/20 , G03F7/00
CPC classification number: G03F9/7076 , G03F7/70633 , G03F9/7084 , G03F9/7088 , H01L23/544 , H01L2223/54426
Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark, each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.
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公开(公告)号：US20230208092A1
公开(公告)日：2023-06-29
申请号：US18171609
申请日：2023-02-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Henry Tong Yee Shian , Alan Tu , Han-Lung Chang , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
CPC classification number: H01S3/1001 , H05G2/008 , H01S3/104 , H01S3/2316 , H01S3/0407
Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
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公开(公告)号：US11467498B2
公开(公告)日：2022-10-11
申请号：US17222109
申请日：2021-04-05
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jen-Yang Chung , Chieh Hsieh , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.
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公开(公告)号：US11172566B2
公开(公告)日：2021-11-09
申请号：US16805854
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jen-Hung Hsiao , Po-Chung Cheng , Li-Jui Chen , Shang-Chieh Chien
Abstract: A droplet generator includes a steering system, a reservoir, a nozzle, a first heater, a second heater and a third heater. The steering system is used for controlling a position of droplet release of the droplet generator. The reservoir is held on the steering system for storing tin. The nozzle is connected with the reservoir for generating tin droplets, wherein the nozzle comprises at least a first zone, a second zone and a third zone connected in sequence. The first heater surrounds a peripheral surface of the nozzle in the first zone. The second heater surrounds a peripheral surface of the nozzle in the second zone. The third heater surrounds a peripheral surface of the nozzle in the third zone, wherein the heating of the first heater, the second heater and the third heater are separately controlled.
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Patent Agency Ranking
公开(公告)号：US11166361B2
公开(公告)日：2021-11-02
申请号：US16697149
申请日：2019-11-26
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Kuan-Hung Chen , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
Abstract: A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.
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公开(公告)号：US11134558B2
公开(公告)日：2021-09-28
申请号：US16508596
申请日：2019-07-11
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shih-Yu Tu , Yu-Kuang Sun , Shao-Hua Wang , Han-Lung Chang , Hsiao-Lun Chang , Li-Jui Chen , Po-Chung Cheng , Cheng-Hao Lai , Hsin-Feng Chen , Wei-Shin Cheng , Ming-Hsun Tsai , Yen-Hsun Chen
IPC: H05G2/00
Abstract: A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.
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公开(公告)号：US11086237B2
公开(公告)日：2021-08-10
申请号：US16805861
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Chen , Po-Chung Cheng , Li-Jui Chen , Che-Chang Hsu , Chi Yang
IPC: G03F7/20
Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.
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公开(公告)号：US11032897B2
公开(公告)日：2021-06-08
申请号：US16548731
申请日：2019-08-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shih-Yu Tu , Han-Lung Chang , Hsiao-Lun Chang , Li-Jui Chen , Po-Chung Cheng
IPC: H05G2/00
Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.
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公开(公告)号：US10955750B2
公开(公告)日：2021-03-23
申请号：US16512811
申请日：2019-07-16
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wei-Chun Yen , Chi Yang , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
IPC: G03B27/54 , G03F7/20 , H05G2/00 , H01L21/027
Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
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