公开(公告)号：US10687003B2

公开(公告)日：2020-06-16

申请号：US15228874

申请日：2016-08-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Keiji Mabuchi ,  Dyson H. Tai ,  Oray Orkun Cellek ,  Duli Mao ,  Sohei Manabe

IPC: H04N5/355 ,  H04N5/369 ,  H01L27/146 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/378

Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.

公开(公告)号：US10243015B1

公开(公告)日：2019-03-26

申请号：US15872887

申请日：2018-01-16

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: A method for fabricating a photosensor array integrated circuit includes forming an isolation trench by a method comprising depositing a hard mask layer on a [110]-oriented single-crystal silicon substrate wafer, depositing, exposing, and developing a photoresist on the hard mask layer to define photoresist openings of locations for the trenches, dry plasma etching through the photoresist openings to form openings in the hard mask layer of locations for the trenches, and performing an anisotropic wet etch through the openings in the hard mask layer. In particular embodiments, the trenches are lined with P-type silicon, a silicon dioxide dielectric, and an additional oxide layer before being filled with tungsten.

公开(公告)号：US10103185B2

公开(公告)日：2018-10-16

申请号：US15874648

申请日：2018-01-18

Applicant: OmniVision Technologies, Inc.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/347 ,  H01L27/146 ,  H01L31/0392 ,  H01L31/18

Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

公开(公告)号：US20180240833A1

公开(公告)日：2018-08-23

申请号：US15439793

申请日：2017-02-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Cunyu Yang ,  Gang Chen ,  Jing Ye ,  Xi-Feng Gao ,  Jiaming Xing

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

公开(公告)号：US20180226447A1

公开(公告)日：2018-08-09

申请号：US15945530

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.

公开(公告)号：US10015389B2

公开(公告)日：2018-07-03

申请号：US15273338

申请日：2016-09-22

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Dyson H. Tai

IPC: H04N5/232 ,  G02B3/00 ,  G02B5/20 ,  G02B7/36 ,  G03B13/36 ,  H04N5/225

CPC classification number: H04N5/23212 ,  G02B3/0018 ,  G02B3/0056 ,  G02B5/20 ,  G02B7/34 ,  G02B7/36 ,  G03B13/36 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/232122 ,  H04N5/3696

Abstract: A PDAF imaging system includes an image sensor and an image data processing unit. The image sensor has an asymmetric-microlens PDAF detector that includes: (a) a plurality of pixels forming a sub-array having at least two rows and two columns, and (b) a microlens located above each of the plurality of pixels and being rotationally asymmetric about an axis perpendicular to the sub-array. The axis intersects a local extremum of a top surface of the microlens. The image data processing unit is capable of receiving electrical signals from each of the plurality of pixels and generating a PDAF signal from the received electrical signals. A method for forming a gull-wing microlens includes forming, on a substrate, a plate having a hole therein. The method also includes reflowing the plate.

公开(公告)号：US20180033811A1

公开(公告)日：2018-02-01

申请号：US15717047

申请日：2017-09-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US20170373109A1

公开(公告)日：2017-12-28

申请号：US15195926

申请日：2016-06-28

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

公开(公告)号：US20170345851A1

公开(公告)日：2017-11-30

申请号：US15169477

申请日：2016-05-31

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L31/0392 ,  H01L31/18

CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/03921 ,  H01L31/1812

Abstract: An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

公开(公告)号：US20170271384A1

公开(公告)日：2017-09-21

申请号：US15071035

申请日：2016-03-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.